| 1. |
- Ferrari, A. C., et al.
(författare)
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Science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems
- 2015
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Ingår i: Nanoscale. - : Royal Society of Chemistry (RSC). - 2040-3372 .- 2040-3364. ; 7:11, s. 4598-4810
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Tidskriftsartikel (refereegranskat)abstract
- We present the science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems, targeting an evolution in technology, that might lead to impacts and benefits reaching into most areas of society. This roadmap was developed within the framework of the European Graphene Flagship and outlines the main targets and research areas as best understood at the start of this ambitious project. We provide an overview of the key aspects of graphene and related materials (GRMs), ranging from fundamental research challenges to a variety of applications in a large number of sectors, highlighting the steps necessary to take GRMs from a state of raw potential to a point where they might revolutionize multiple industries. We also define an extensive list of acronyms in an effort to standardize the nomenclature in this emerging field.
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| 2. |
- Anzi, L., et al.
(författare)
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Ultra-low contact resistance in graphene devices at the Dirac point
- 2018
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Ingår i: 2D Materials. - : IOP Publishing. - 2053-1583. ; 5:2
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Tidskriftsartikel (refereegranskat)abstract
- Contact resistance is one of the main factors limiting performance of short-channel graphene field-effect transistors (GFETs), preventing their use in low-voltage applications. Here we investigated the contact resistance between graphene grown by chemical vapor deposition (CVD) and different metals, and found that etching holes in graphene below the contacts consistently reduced the contact resistance, down to 23 m with Au contacts. This low contact resistance was obtained at the Dirac point of graphene, in contrast to previous studies where the lowest contact resistance was obtained at the highest carrier density in graphene (here 200 m was obtained under such conditions). The 'holey' Au contacts were implemented in GFETs which exhibited an average transconductance of 940 S m−1 at a drain bias of only 0.8 V and gate length of 500 nm, which out-perform GFETs with conventional Au contacts.
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| 3. |
- Carey, T., et al.
(författare)
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Fully inkjet-printed two-dimensional material field-effect heterojunctions for wearable and textile electronics
- 2017
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Ingår i: Nature Communications. - : Springer Science and Business Media LLC. - 2041-1723 .- 2041-1723. ; 8:1
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Tidskriftsartikel (refereegranskat)abstract
- Fully printed wearable electronics based on two-dimensional (2D) material heterojunction structures also known as heterostructures, such as field-effect transistors, require robust and reproducible printed multi-layer stacks consisting of active channel, dielectric and conductive contact layers. Solution processing of graphite and other layered materials provides low-cost inks enabling printed electronic devices, for example by inkjet printing. However, the limited quality of the 2D-material inks, the complexity of the layered arrangement, and the lack of a dielectric 2D-material ink able to operate at room temperature, under strain and after several washing cycles has impeded the fabrication of electronic devices on textile with fully printed 2D heterostructures. Here we demonstrate fully inkjet-printed 2D-material active heterostructures with graphene and hexagonal-boron nitride (h-BN) inks, and use them to fabricate all inkjet-printed flexible and washable field-effect transistors on textile, reaching a field-effect mobility of ~91 cm2 V-1 s-1, at low voltage (<5 V). This enables fully inkjet-printed electronic circuits, such as reprogrammable volatile memory cells, complementary inverters and OR logic gates.
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| 4. |
- Guerriero, E., et al.
(författare)
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High-Gain Graphene Transistors with a Thin AlOx Top-Gate Oxide
- 2017
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Ingår i: Scientific Reports. - : Springer Science and Business Media LLC. - 2045-2322 .- 2045-2322. ; 7:1
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Tidskriftsartikel (refereegranskat)abstract
- The high-frequency performance of transistors is usually assessed by speed and gain figures of merit, such as the maximum oscillation frequency f(max), cutoff frequency f(T), ratio f(max)/f(T), forward transmission coefficient S-21, and open-circuit voltage gain A(v). All these figures of merit must be as large as possible for transistors to be useful in practical electronics applications. Here we demonstrate high-performance graphene field-effect transistors (GFETs) with a thin AlOx gate dielectric which outperform previous state-of-the-art GFETs: we obtained f(max)/f(T) > 3, A(v) > 30 dB, and S-21 = 12.5 dB (at 10 MHz and depending on the transistor geometry) from S-parameter measurements. A dc characterization of GFETs in ambient conditions reveals good current saturation and relatively large transconductance similar to 600 S/m. The realized GFETs offer the prospect of using graphene in a much wider range of electronic applications which require substantial gain.
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| 5. |
- Vasiljevic, D.Z., et al.
(författare)
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Performance analysis of flexible ink-jet printed humidity sensors based on graphene oxide
- 2018
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Ingår i: IEEE Sensors Journal. - 1558-1748 .- 1530-437X. ; 18:11, s. 4378-4383
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Tidskriftsartikel (refereegranskat)abstract
- This paper presents design, fabrication, and characterization of flexible capacitive graphene oxide (GO) based humidity sensors, which can be used in many applications, such as environmental protection, civil engineering, and agriculture. They consist of interdigitated electrodes ink-jet printed on a polyimide flexible substrate and GO based sensing layer. Measurement setup for testing and characterization was developed in laboratory conditions. The dependence of the capacitance and resistance of the GO based humidity sensors on the percentage of the applied humidity is presented. The main advantage of developed GO based capacitive humidity sensors is very large variation of capacitance, almost five orders of magnitude, compared with the previously demonstrated sensors. The other advantages of the sensors are fast response-recovery time, excellent reproducibility of the measurement results, and use of cost-effective additive ink-jet technology.
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