| 1. |
- Giannakopoulos, Stavros, 1989, et al.
(författare)
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A 112 Gb/s radiation-hard mid-board optical transceiver in 130 nm SiGe BiCMOS for intra-satellite links
- 2021
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Ingår i: Frontiers in Physics. - : Frontiers Media SA. - 2296-424X. ; 9
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Tidskriftsartikel (refereegranskat)abstract
- We report the design of 112 Gb/s radiation-hard (RH) optical transceiver applicable to intra-satellite optical interconnects. The transceiver chipset comprises of VCSEL driver and transimpedance amplifier (TIA) ICs integrated with four channels per die, which are adapted for flip-chip assembly into a mid-board optics (MBO) optical transceiver module. The ICs are designed in the IHP 130nm SiGe BiCMOS process (SG13RH) leveraging proven robustness in radiation environments and high-speed performance featuring bipolar transistors (HBTs) with fT/ fMAX values of up to 250/340 GHz. Besides hardening-by-technology, radiation-hardened-by-design (RHBD) components are used, including enclosed layout transistors (ELT) and digital logic cells. We report design features of the ICs and module and provide performance data from post-layout simulations. We present radiation evaluation data on the analogue devices and digital cells, which indicate that the transceiver ICs would operate under typical total ionizing dose (TID) levels and single event latch-up thresholds found in geostationary satellites.
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| 2. |
- Sourikopoulos, Ilias, et al.
(författare)
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The H2020-SPACE-SIPHODIAS project: Space-grade optoelectronic interfaces for photonic digital and analogue very-high-throughput satellite payloads
- 2021
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Ingår i: Proceedings of SPIE - The International Society for Optical Engineering. - : SPIE. - 0277-786X .- 1996-756X. ; 11852
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Konferensbidrag (refereegranskat)abstract
- The EU-SIPhoDiAS project deals with the development of critical photonic building blocks needed for high-performance and low size, weight, and power (SWaP) photonics-enabled Very High Throughput Satellites (VHTS). In this presentation, we report on the design and fabrication activities during the first year of the project concerning the targeted family of digital and microwave photonic components. This effort aims to demonstrate components of enhanced reliability at technology readiness level (TRL) 7. Specifically, with respect to microwave photonic links, we report: (i) the design of Ka and Q-bands analogue photodetectors that will be assembled in compact packages, allowing for very high bandwidth per unit area and (ii) on the design of compact V-band GaAs electro-optic modulator arrays, which use a folded-path optical configuration to manage all fiber interfaces packaged opposite direct in-line RF feeds for ease of board layouts and mass/size benefits. With respect to digital links, we report on the development of 100 Gb/s (4 x 25 Gb/s) digital optical transceiver sub-assemblies developed using flip-chip mounting of electronic and opto-parts on a high-reliability borosilicate substrate. The transceiver chipset developed specifically for this project refers to fully-custom 25 Gb/s radiation hard (RH) VCSEL driver and TIA ICs designed in IHP’s 130 nm SiGe BiCMOS Rad-Hard process.
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