| 1. |
|
|
| 2. |
|
|
| 3. |
|
|
| 4. |
- Hallén, Anders., et al.
(författare)
-
Ion implantation of silicon carbide
- 2002
-
Ingår i: Nuclear Instruments and Methods in Physics Research Section B. - 0168-583X .- 1872-9584. ; 186, s. 186-194
-
Tidskriftsartikel (refereegranskat)abstract
- Ion implantation is an important technique for a successful implementation of commercial SiC devices. Much effort has also been devoted to optimising implantation and annealing parameters to improve the electrical device characteristics. However, there is a severe lack of understanding of the fundamental implantation process and the generation and annealing kinetics of point defects and defect complexes. Only very few of the most elementary intrinsic point defects have been unambiguously identified so far. To reach a deeper understanding of the basic mechanisms SiC samples have been implanted with a broad range of ions, energies, doses, etc., and the resulting defects and damage produced in the lattice have been studied with a multitude of characterisation techniques. In this contribution we will review some of the results generated recently and also try to indicate where more research is needed. In particular, deep level transient spectroscopy (DLTS) has been used to investigate point defects at very low doses and transmission electron microscopy (TEM) and Rutherford backscattering spectrometry (RBS) are used for studying the damage build-up at high doses.
|
|
| 5. |
- Bergman, JP, et al.
(författare)
-
Characterisation and defects in silicon carbide
- 2002
-
Ingår i: Materials Science Forum, Vols. 389-393.
-
Konferensbidrag (refereegranskat)abstract
- In this work we present experimental results of several defects in 4H Sic that are of interest both from a fundamental and physical point of view. And also of great importance for device applications utilizing the Sic material. These defects include the temperature stable so called D1 defect, which is created after irradiation. This optical emission has been identified as an isoelectronic defect bound at a hole attractive pseudodonor, and we have been able to correlate this to the electrically observed hole trap HS1 seen in minority carrier transient spectroscopy (MCTS). It also includes the UD1 defect observed using absorption and FTIR and which is believed to be responsible for the semi-insulating behavior of material grown by the High temperature, HTCVD technique. Finally, we have described the formation and proper-ties of critical, generated defect in high power Sic bipolar devices. This is identified as a stacking fault in the Sic basal plane, using mainly white beam synchrotron Xray topography. The stacking fault is both optically and electrically active, by forming extended local potential reduction of the conduction band.
|
|
| 6. |
- Bergman, Peder, et al.
(författare)
-
Defects in 4H silicon carbide
- 2001
-
Ingår i: Physica B, Vols. 308-310. ; , s. 675-679
-
Konferensbidrag (refereegranskat)abstract
- We present experimental results related to several different intrinsic defects that in different ways influence the material properties and are therefore technologically important defects. This includes the so-called D1 defect which is created after irradiation and which is temperature stable. From the optical measurements we were able to identify the D1 bound exciton as an isoelectronic defect bound at a hole attractive pseudo-donor, and we have been able to correlate this to the electrically observed hole trap HS1 seen in minority carrier transient spectroscopy (MCTS). Finally, we describe the formation and properties of a critical, generated defect in high power SiC bipolar devices. It is identified as a stacking fault in the SiC basal plane. It can be seen as a local reduction of the carrier lifetime, in triangular or rectangular shape, which explains the enhanced forward voltage drop in the diodes. The entire stacking faults are also optically active as can be seen as dark triangles and rectangles in low temperature cathodo-luminescence, and the fault and their bounding partial dislocations are seen and identified using synchrotron topography. © 2001 Elsevier Science B.V. All rights reserved.
|
|
| 7. |
- Haas, Brian J., et al.
(författare)
-
Genome sequence and analysis of the Irish potato famine pathogen Phytophthora infestans
- 2009
-
Ingår i: Nature. - : Springer Science and Business Media LLC. - 0028-0836 .- 1476-4687. ; 461:7262, s. 393-398
-
Tidskriftsartikel (refereegranskat)abstract
- Phytophthora infestans is the most destructive pathogen of potato and a model organism for the oomycetes, a distinct lineage of fungus-like eukaryotes that are related to organisms such as brown algae and diatoms. As the agent of the Irish potato famine in the mid-nineteenth century, P. infestans has had a tremendous effect on human history, resulting in famine and population displacement(1). To this day, it affects world agriculture by causing the most destructive disease of potato, the fourth largest food crop and a critical alternative to the major cereal crops for feeding the world's population(1). Current annual worldwide potato crop losses due to late blight are conservatively estimated at $6.7 billion(2). Management of this devastating pathogen is challenged by its remarkable speed of adaptation to control strategies such as genetically resistant cultivars(3,4). Here we report the sequence of the P. infestans genome, which at similar to 240 megabases (Mb) is by far the largest and most complex genome sequenced so far in the chromalveolates. Its expansion results from a proliferation of repetitive DNA accounting for similar to 74% of the genome. Comparison with two other Phytophthora genomes showed rapid turnover and extensive expansion of specific families of secreted disease effector proteins, including many genes that are induced during infection or are predicted to have activities that alter host physiology. These fast-evolving effector genes are localized to highly dynamic and expanded regions of the P. infestans genome. This probably plays a crucial part in the rapid adaptability of the pathogen to host plants and underpins its evolutionary potential.
|
|
| 8. |
|
|
| 9. |
|
|
| 10. |
|
|
