| 1. |
- Craddock, Nick, et al.
(författare)
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Genome-wide association study of CNVs in 16,000 cases of eight common diseases and 3,000 shared controls
- 2010
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Ingår i: Nature. - : Springer Science and Business Media LLC. - 0028-0836 .- 1476-4687. ; 464:7289, s. 713-720
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Tidskriftsartikel (refereegranskat)abstract
- Copy number variants (CNVs) account for a major proportion of human genetic polymorphism and have been predicted to have an important role in genetic susceptibility to common disease. To address this we undertook a large, direct genome-wide study of association between CNVs and eight common human diseases. Using a purpose-designed array we typed,19,000 individuals into distinct copy-number classes at 3,432 polymorphic CNVs, including an estimated similar to 50% of all common CNVs larger than 500 base pairs. We identified several biological artefacts that lead to false-positive associations, including systematic CNV differences between DNAs derived from blood and cell lines. Association testing and follow-up replication analyses confirmed three loci where CNVs were associated with disease-IRGM for Crohn's disease, HLA for Crohn's disease, rheumatoid arthritis and type 1 diabetes, and TSPAN8 for type 2 diabetes-although in each case the locus had previously been identified in single nucleotide polymorphism (SNP)-based studies, reflecting our observation that most common CNVs that are well-typed on our array are well tagged by SNPs and so have been indirectly explored through SNP studies. We conclude that common CNVs that can be typed on existing platforms are unlikely to contribute greatly to the genetic basis of common human diseases.
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| 2. |
- Downey, Harriet, et al.
(författare)
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Training future generations to deliver evidence-based conservation and ecosystem management
- 2021
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Ingår i: Ecological Solutions and Evidence. - : Wiley. - 2688-8319. ; 2:1
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Forskningsöversikt (refereegranskat)abstract
- 1. To be effective, the next generation of conservation practitioners and managers need to be critical thinkers with a deep understanding of how to make evidence-based decisions and of the value of evidence synthesis.2. If, as educators, we do not make these priorities a core part of what we teach, we are failing to prepare our students to make an effective contribution to conservation practice.3. To help overcome this problem we have created open access online teaching materials in multiple languages that are stored in Applied Ecology Resources. So far, 117 educators from 23 countries have acknowledged the importance of this and are already teaching or about to teach skills in appraising or using evidence in conservation decision-making. This includes 145 undergraduate, postgraduate or professional development courses.4. We call for wider teaching of the tools and skills that facilitate evidence-based conservation and also suggest that providing online teaching materials in multiple languages could be beneficial for improving global understanding of other subject areas.
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| 3. |
- Menon, Heera, et al.
(författare)
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Fabrication of Single-Crystalline InSb-on-Insulator by Rapid Melt Growth
- 2022
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Ingår i: Physica Status Solidi (A) Applications and Materials Science. - : Wiley. - 1862-6300. ; 219:4
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Tidskriftsartikel (refereegranskat)abstract
- InSb has the smallest bandgap and highest electron mobility among III-V semiconductors and is widely used for photodetectors and high-frequency electronic applications. Integration of InSb directly on Si would drastically reduce the fabrication cost and enable new applications, however, it is very challenging due to its 19% lattice mismatch with Si. Herein, the integration of single-crystalline InSb microstructures on insulator-covered Si through rapid melt growth (RMG) is reported and specifically provides details on the fabrication process. The importance of achieving high-quality conformal capping layers at low thermal budget to contain the InSb melt is assessed when the sample is annealed. The importance of ensuring a pristine Si seed area to achieve single-crystalline InSb is illustrated and demonstrated here for the first time.
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| 4. |
- Menon, Heera, et al.
(författare)
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Improved quality of InSb-on-insulator microstructures by flash annealing into melt
- 2021
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Ingår i: Nanotechnology. - : IOP Publishing. - 0957-4484 .- 1361-6528. ; 32:16
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Tidskriftsartikel (refereegranskat)abstract
- Monolithic integration of III-V semiconductors with Silicon technology has instigated a wide range of new possibilities in the semiconductor industry, such as combination of digital circuits with optical sensing and high-frequency communication. A promising CMOS compatible integration process is rapid melt growth (RMG) that can yield high quality single crystalline material at low cost. This paper represents the study on ultra-thin InSb-on-insulator microstructures integrated on a Si platform by a RMG-like process. We utilize flash lamp annealing (FLA) to melt and recrystallize the InSb material for an ultra-short duration (milliseconds), to reduce the thermal budget necessary for integration with Si technology. We compare the result from FLA to regular rapid thermal annealing (seconds). Recrystallized InSb was characterized using electron back scatter diffraction which indicate a transition from nanocrystalline structure to a crystal structure with grain sizes exceeding 1 μm after the process. We further see a 100× improvement in electrical resistivity by FLA annealed sample when compared to the as-deposited InSb with an average Hall mobility of 3100 cm2 V−1 s−1 making this a promising step towards realizing monolithic mid-infrared detectors and quantum devices based on InSb.
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| 5. |
- Menon, Heera, et al.
(författare)
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Integration of InSb on Si by Rapid Melt Growth
- 2019
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Konferensbidrag (refereegranskat)abstract
- Monolithic integration of III-V semiconductors with Silicon technology has instigated a wide range of new possibilities in the semiconductor industry, such as combination of digital circuits with optical sensing and high-frequency communication. Dissimilarities in the crystal structure symmetry and large lattice mismatch between III-V’s and Si are the challenges that prevent direct epitaxial growth of III-V on Si. A promising method is Rapid Melt Growth (RMG) which integrates high-quality single crystalline III-V microstructures at low cost and in a process that is CMOS compatible1. In this growth, amorphous source material is deposited inside a micro-crucible with a nano-scale opening (seed) to the Si substrate. When the material is annealed above its melting point, the crucible contains the liquid. On cooling, epitaxial growth occurs from the seed to the end of the structure, resulting in a high quality crystal as strain-induced misfit dislocations are confined to the region near the seed. RMG of Ge on insulator [1], GaAs2, GaSb2 and InAs3 has been reported. In this work we have developed for the first time the RMG process for integrating InSb nano and microstructures on Si. Such InSb materials are promising for integrated optoelectronics (mid-infrared) and topological quantum devices. We will here describe the process development and characterization of the resulting InSb material using x-ray diffraction, electron backscatter diffraction, atomic force microscopy, and electrical measurements. 1. Liu et al. APL. 84, 2563 (2004).2. Chen et al. Electron Dev Lett. 31, 11 (2010).3. Yuan et al. Symp VLSI Tech Dig. T54-5 (2013)
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