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Sökning: WFRF:(Stemme V)

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  • Saharil, Farizah, et al. (författare)
  • LOW-TEMPERATURE CMOS-COMPATIBLE 3D-INTEGRATION OF MONOCRYSTALLINE-SILICON BASED PZT RF MEMS SWITCH ACTUATORS ON RF SUBSTRATES
  • 2010
  • Ingår i: MEMS 2010. - New York : Ieee. - 9781424457649 ; , s. 47-50
  • Konferensbidrag (refereegranskat)abstract
    • This paper presents a low temperature (200 degrees C) CMOS-compatible fabrication process for integrating high-temperature deposited lead zirconate titanate (PZT) on this film monocrystalline-silicon piezoelectric actuators, onto an RF substrate, and successful demonstration of this process for fabrication of metal-contact RF-MEMS switches. The patterned PZT/silicon multi-layer stack is transfer-bonded from a silicon-on-insulator (SOI) donor wafter to AF-45 glass RF substrate using adhesive wafer transfer bonding. Furthermore, several strategies have been investigate to drastically reduce the post bonding misalignment created by the shear forces between the bonding chucks during wafer bonding.
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  • Sterner, Mikael, et al. (författare)
  • RF MEMS high-impedance tuneable metamaterials for millimeter-wave beam steering
  • 2009
  • Ingår i: Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems. - 9781424429776 ; , s. 896-899
  • Konferensbidrag (refereegranskat)abstract
    • This paper presents the design, fabrication and evaluation of RF MEMS analog tuneable metamaterial highimpedance surfaces (HIS). These miniaturized structures are designed for W-band beam steering applications and are intended to replace a large multi-component subsystem by a single chip. Furthermore, the MEMS tuneable microwavemeta materials of this paper present a new class of microsystems interacting with microwaves, by uniquely combining the functionality of the microwave structures with the tuning MEMS actuators in one and the same distributed surface elements. A high-impedance surface array with 200 x 52 elements and a pitch of 350 Wtm has been successfully fabricated and evaluated. The device features monocrystalline silicon membranes which are transfer-bonded on a multi-wafer silicon-glass substrate. The measured pull-in voltage is 15.9 V. Microwave measurements from 70 GHz to 114 GHz confirm the frequency selective nature of the surface. The fabricated devices showed a resonance frequency of 111.3 GHz to 111.8 GHz with losses ranging from -18 dB to -23 dB at the resonance and from -5 dB to -7 dB outside the resonance, which is worse than theoretically predicted but mainly attributed to imperfections in the design and fabrication of the first prototypes. ï¿œ2009 IEEE.
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  • Resultat 1-10 av 11

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