| 1. |
- Di Fatta, G., et al.
(författare)
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Preface
- 2011
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Ingår i: IEEE International Conference on Data Mining. Proceedings. - : Institute of Electrical and Electronics Engineers (IEEE). - 1550-4786. ; , s. xlviii-xlvix
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Tidskriftsartikel (refereegranskat)
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| 2. |
- Lindberg, H., et al.
(författare)
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Mode locking a 1550 nm semiconductor disk laser by using a GaInNAs saturable absorber
- 2005
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Ingår i: Optics Letters. - 0146-9592 .- 1539-4794. ; 30:20, s. 2793-2795
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Tidskriftsartikel (refereegranskat)abstract
- Passive mode locking of an optically pumped, InP-based, 1550 nm semiconductor disk laser by using a GaInNAs saturable absorber mirror is demonstrated. To reduce material heating and enable high-power operation, a 50 mu m thick diamond heat spreader is bonded to the surface of the gain chip. The laser operates at a repetition frequency of 2.97 GHz and emits near-transform-limited 3.2 ps pulses with an average output power of 120 mW.
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| 3. |
- Chitica, N, et al.
(författare)
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Fabrication of tunable InP/air-gap Fabry-Perot cavities by selective etching of InGaAs sacrificial layers
- 1999
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Ingår i: Physica scripta. T. - : ROYAL SWEDISH ACAD SCIENCES. - 0281-1847. ; T79, s. 131-134
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Tidskriftsartikel (refereegranskat)abstract
- We report the fabrication of InP/air-gap Fabry-Perot resonant cavities with an improved tunability characteristic achieved through the micromachining of more flexible suspended InP beams. The micromechanical structures are electrostatically actuated. A tuning range of 55 nm is demonstrated for an actuation voltage of 12 V. The low leakage current, of less than 10 µA for a bias of up to 30 V, provides a low actuation power. The tunable air-gap cavities are fabricated by selective wet etching of InGaAs sacrificial layers. An FeCl3 based etchant is used to completely remove the InGaAs material without affecting the thickness of the InP layer. The anisotropy of the etch rate of InGaAs was also investigated and exploited in the micromachining process.
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| 4. |
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| 5. |
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| 6. |
- Mulot, Mikael, et al.
(författare)
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Fabry-Perot cavities based on two-dimensional photonic crystals fabricated in InP membranes
- 2004
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Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 95:10, s. 5928-5930
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Tidskriftsartikel (refereegranskat)abstract
- We measured the transmission and analyzed out-of-plane loss in Fabry-Perot filters based on photonic crystals etched in a suspended InP membrane. The resonant cavity of the Fabry-Perot filter is based on a single row line defect introduced in a triangular lattice of air holes. The transmission spectrum of these structures is measured by using the end-fire method. We measured a cavity quality factor of 3200 for a resonance wavelength in the 1.5 mum wavelength range. We identify that radiation through the holes at both extremities of the resonant cavity largely contributes to the loss in the device.
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| 7. |
- Strassner, M, et al.
(författare)
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III-V semiconductor material for tunable Fabry-Perot filters for coarse and dense WDM systems
- 2000
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Ingår i: SENSORS AND ACTUATORS A-PHYSICAL. - : ELSEVIER SCIENCE SA. - 0924-4247. ; 85:1-3, s. 249-255
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Tidskriftsartikel (refereegranskat)abstract
- In the following payer, we report on the investigation of the mechanical properties of InP grown on InGaAs by organic metal vapor phase epitaxy (OMVPE). When InP is grown, it is stressed due to an unintentional arsenic doping profile. This stress gradient
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