| 1. |
- Jin, Tingting, et al.
(författare)
-
Efficient heterogeneous integration of InP/Si and GaSb/Si templates with ultra-smooth surfaces
- 2022
-
Ingår i: Science China Information Sciences. - : Springer Science and Business Media LLC. - 1869-1919 .- 1674-733X. ; 65:8
-
Tidskriftsartikel (refereegranskat)abstract
- Heterogeneous integration of InP and GaSb on Si substrates holds a huge potential interest in near-infrared and mid-infrared optoelectronic devices. In this study, 2-inch 180-nm-thick InP and 185-nm-thick GaSb thin layers were successfully transferred onto the Si substrates to form high-quality and ultra-smooth InP/Si and GaSb/Si templates using molecular beam epitaxy (MBE) and the ion-slicing technique together with selective chemical etching. The relocation of the implantation-introduced damage in the sacrificial layer enables the transfer of relatively defect-free InP and GaSb thin films. The sacrificial layers were completely etched off by selective chemical etching, leaving ultra-smooth epitaxial surfaces with a roughness of 0.2 nm for the InP/Si template and 0.9 nm for the GaSb/Si template, respectively. Thus, the chemical mechanical polishing (CMP) process was not required to smooth the surface which usually introduces particles and chemical contaminations on the transferred templates. Furthermore, the donor substrate is not consumed and can be recycled to reduce the cost, which provides a paradigm for the sustainable and economic development of the Si integration platform.
|
|
| 2. |
- Liang, Hao, et al.
(författare)
-
InAs/GaAs quantum dot laser epitaxially grown on on-axis (001) GaAsOI substrate
- 2021
-
Ingår i: Optics Express. - 1094-4087 .- 1094-4087. ; 29:23, s. 38465-38476
-
Tidskriftsartikel (refereegranskat)abstract
- Quantum dot (QD) laser as a light source for silicon optical integration has attracted great research attention because of the strategic vision of optical interconnection. In this paper, the communication band InAs QD ridge waveguide lasers were fabricated on GaAs-on-insulator (GaAsOI) substrate by combining ion-slicing technique and molecular beam epitaxy (MBE) growth. On the foundation of optimizing surface treatment processes, the InAs/In0.13Ga0.87As/GaAs dot-in-well (DWELL) lasers monolithically grown on a GaAsOI substrate were realized under pulsed operation at 20 °C. The static device measurements reveal comparable performance in terms of threshold current density, slope efficiency and output power between the QD lasers on GaAsOI and GaAs substrates. This work shows great potential to fabricate highly integrated light source on Si for photonic integrated circuits.
|
|
