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Sökning: WFRF:(Sundgren J. E.)

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1.
  • Foerster, Bradley R., et al. (författare)
  • Reduced insular gamma-aminobutyric acid in fibromyalgia
  • 2012
  • Ingår i: Arthritis and Rheumatism. - : Wiley. - 1529-0131 .- 0004-3591. ; 64:2, s. 579-583
  • Tidskriftsartikel (refereegranskat)abstract
    • Objective Recent scientific findings have reinvigorated interest in examining the role of gamma-aminobutyric acid (GABA), the major inhibitory central nervous system neurotransmitter, in chronic pain conditions. Decreased inhibitory neurotransmission is a proposed mechanism in the pathophysiology of chronic pain syndromes such as fibromyalgia (FM). The purpose of this study was to test the hypothesis that decreased levels of insular and anterior cingulate GABA would be present in FM patients, and that the concentration of this neurotransmitter would be correlated with pressurepain thresholds. Methods. Sixteen FM patients and 17 age-and sex-matched healthy controls underwent pressure-pain testing and a 3T proton magnetic resonance spectroscopy session in which the right anterior insula, right posterior insula, anterior cingulate, and occipital cortex were examined in subjects at rest. Results. GABA levels in the right anterior insula were significantly lower in FM patients compared with healthy controls (mean +/- SD 1.17 +/- 0.24 arbitrary institutional units versus 1.42 +/- 0.32 arbitrary institutional units; P = 0.016). There was a trend toward increased GABA levels in the anterior cingulate of FM patients compared with healthy controls (P = 0.06). No significant differences between groups were detected in the posterior insula or occipital cortex (P > 0.05 for all comparisons). Within the right posterior insula, higher levels of GABA were positively correlated with pressurepain thresholds in the FM patients (Spearman's rho = 0.63; P = 0.02). Conclusion. Diminished inhibitory neurotransmission resulting from lower concentrations of GABA within the right anterior insula may play a role in the pathophysiology of FM and other central pain syndromes.
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2.
  • Ni, W.-X., et al. (författare)
  • δ-function-shaped Sb-doping profiles in Si(001) obtained using a low-energy accelerated-ion source during molecular-beam epitaxy
  • 1992
  • Ingår i: Physical Review B. - 0163-1829. ; 46:12, s. 7551-7558
  • Tidskriftsartikel (refereegranskat)abstract
    • Two-dimensional (2D) buried delta-function-shaped Sb-doping profiles have been obtained in Si using a low-energy accelerated Sb-ion source during molecular-beam epitaxy. A combination of secondary-ion mass spectrometry (SIMS), capacitance-voltage (C-V) measurements, and cross-sectional transmission electron microscopy (XTEM) was used to investigate dopant distributions and to determine profile widths. The 2D-sheet Sb-doping concentration N(Sb), obtained by integrating SIMS delta-doping profiles in samples grown with substrate temperature T(s) = 620-degrees-C and Sb-ion acceleration potentials V(Sb) = 200 and 300 V, was found to vary linearly with the product of the Sb-ion flux and the exposure time (i.e., the ion dose) over the N(Sb) range from 5 X 10(12) to 2 X 10(14) cm-2. The full width at half maximum (FWHM) concentration of 8-doping profiles in Si(001) films was less than the depth resolution of both SIMS and C-V measurements (approximately 10 and 3 nm, respectively). High-resolution XTEM lattice images show that the FWHM was less-than-or-equal-to 2 nm. This is consistent with dopant incorporation simulations, based upon a multisite transition-state dopant incorporation model, which show that accelerated-beam dopant species are trapped in near-surface substitutional sites with atomic mobilities between those of surface and bulk atoms. Dopant surface segregation during growth is strongly suppressed, and the dopant distribution is determined primarily by the straggle in ion trapping distributions. The present results are compared with profile broadening observed in 8-doped layers obtained by solid-phase epitaxy of amorphous Si containing a buried Sb layer.
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3.
  • Chirita, Valeriu, et al. (författare)
  • Cluster diffusion and surface morphological transitions on Pt (111) via reptation and concerted motion
  • 2000
  • Ingår i: Thin Solid Films. - 0040-6090 .- 1879-2731. ; 370:1, s. 179-185
  • Tidskriftsartikel (refereegranskat)abstract
    • Embedded-atom molecular dynamics simulations were used to follow the diffusion dynamics of compact Pt clusters with up to 19 atoms on Pt (111) surfaces. The results reveal a novel cluster diffusion mechanism, involving successive shear translations of adjacent subcluster regions, which give rise to reptation, a snake-like gliding motion. We show that for compact clusters with 4 to 6 atoms, this mechanism competes energetically with that of island diffusion through concerted motion. However, as the cluster size increases from > 7 to ? 20 atoms, reptation becomes the energetically favored diffusion mechanism. The concerted shear motion of subcluster regions, leading to reptation, is also shown to play a significant role in dendritic-to-compact morphological transitions of Pt island.
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4.
  • Hellgren, N., et al. (författare)
  • Nitrogen bonding structure in carbon nitride thin films studied by soft x-ray spectroscopy
  • 2001
  • Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 79:26, s. 4348-4350
  • Tidskriftsartikel (refereegranskat)abstract
    • Soft x-ray absorption (SXAS) and emission (SXES) spectroscopies were applied to study the nitrogen bonding structure in magnetron sputtered CNx thin films. By comparing with calculated spectra of N in different model systems, N in three main bonding environments can be identified: (i) C equivalent toN bonds, with a sharp SXAS peak at 399.5 eV, (ii) pyridine-like N (i.e., N bonded to two C atoms), with an x-ray absorption resonance at similar to 398.5 eV, and (iii) N substituted in graphite, possibly with one sp(3) carbon as a neighbor (SXAS energy similar to 401 eV). These bondings are present in all CNx films analyzed; however, as shown earlier, the relative intensities between the peaks may vary with the growth conditions. Differences in the coordination of the nearest or second nearest C neighbors only cause slight changes in the peak positions and spectrum shape.
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5.
  • Zheng, W.T., et al. (författare)
  • Chemical bonding in carbon nitride films studied by X-ray spectroscopies
  • 2001
  • Ingår i: Diamond and related materials. - 0925-9635 .- 1879-0062. ; 10:9-10, s. 1897-1900
  • Tidskriftsartikel (refereegranskat)abstract
    • Carbon nitride films are deposited using dc magnetron sputtering in a N2 discharge. The nature of chemical bonding of the films is investigated using X-ray photoelectron spectroscopy, near-edge X-ray absorption fine structure, and X-ray emission spectroscopy. X-Ray photoelectron spectroscopy spectra show that N1s binding states depend on substrate temperature, in which two pronounced peaks can be observed. The near edge X-ray absorption fine structure at C1s and N1s exhibits a similar absorption profile in the p* resonance region, but the s* resonance is sharper in the N1s spectra. Resonant N K-emission spectra show a strong dependence on excitation photo energies. Compared XPS N1s spectra with recent theoretical calculations by Johansson and Stafstrom, two main nitrogen sites are assigned in which N bound to sp3 hybridized C and sp2 hybridized C, respectively. The correlation of X-ray photoelectron, X-ray absorption, and X-ray emission spectra for N in carbon nitride films is also discussed. © 2001 Elsevier Science B.V. All rights reserved.
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6.
  • Zheng, W.T., et al. (författare)
  • Chemical bonding, structure, and hardness of carbon nitride thin films
  • 2000
  • Ingår i: Diamond and related materials. - 0925-9635 .- 1879-0062. ; 9:9-10, s. 1790-1794
  • Konferensbidrag (övrigt vetenskapligt/konstnärligt)abstract
    • Carbon nitride films are deposited on Si(001) substrates by reactive d.c. magnetron sputtering graphite in a pure N2 discharge. The chemical bonding and structure of carbon nitride films were probed using Fourier transformation infrared (FTIR) and near edge X-ray absorption fine structure (NEXAFS), and the hardness was evaluated using nanoindentation experiments. The structure and hardness for the films are dependent on the substrate temperature (T(s)). FTIR and NEXAFS spectra show that N atoms are bound to sp1, sp2 and sp3 hybridized C atoms, and the intensity of p(*) resonance for C1s NEXAFS spectra is the lowest for the film grown at T(s) = 350°C, having a turbostratic-like structure, high hardness and stress. The correlation between the structure and hardness of carbon nitride films is discussed. (C) 2000 Elsevier Science S.A. All rights reserved.Carbon nitride films are deposited on Si(001) substrates by reactive d.c. magnetron sputtering graphite in a pure N2 discharge. The chemical bonding and structure of carbon nitride films were probed using Fourier transformation infrared (FTIR) and near edge X-ray absorption fine structure (NEXAFS), and the hardness was evaluated using nanoindentation experiments. The structure and hardness for the films are dependent on the substrate temperature (Ts). FTIR and NEXAFS spectra show that N atoms are bound to sp1, sp2 and sp3 hybridized C atoms, and the intensity of p* resonance for C1s NEXAFS spectra is the lowest for the film grown at Ts = 350°C, having a turbostratic-like structure, high hardness and stress. The correlation between the structure and hardness of carbon nitride films is discussed.
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7.
  • Birch, J., et al. (författare)
  • Structural characterization of precious-mean quasiperiodic Mo/V single-crystal superlattices grown by dual-target magnetron sputtering
  • 1990
  • Ingår i: Physical Review B. - 1098-0121. ; 41:15, s. 10398-10407
  • Tidskriftsartikel (refereegranskat)abstract
    • A class of quasiperiodic superlattice structures, which can be generated by the concurrent inflation rule A→AmB and B→A (where m=positive integer), has been studied both theoretically and experimentally. Given that the ratios between the thicknesses of the two superlattice building blocks, A and B, are chosen to be γ(m)=[m+(m2+4)1/2]/2 (known as the ‘‘precious means’’), then the x-ray- and electron-diffraction peak positions are analytically found to be located at the wave vectors q=2πΛ−1r[γ(m)]k, where r and k are integers and Λ is an average superlattice wavelength. The analytically obtained results have been compared to experimental results from single-crystalline Mo/V superlattice structures, generated with m=1, 2, and 3. The superlattices were grown by dual-target dc-magnetron sputtering on MgO(001) substrates kept at 700 °C. X-ray diffraction (XRD) and selected-area electron diffraction (SAED) showed that the analytical model mentioned above predicts the peak positions of the experimental XRD and SAED spectra with a very high accuracy. Furthermore, numerical calculations of the diffraction intensities based on a kinematical model of diffraction showed good agreement with the experimental data for all three cases. In addition to a direct verification of the quasiperiodic modulation, both conventional and high-resolution cross-sectional transmission electron microscopy (XTEM) showed that the superlattices are of high crystalline quality with sharp interfaces. Based on lattice resolution images, the width of the interfaces was determined to be less than two (002) lattice-plane spacings (≊0.31 nm).
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8.
  • Broitman, E., et al. (författare)
  • Electrical and optical properties of CNx(0=x=0.25) films deposited by reactive magnetron sputtering
  • 2001
  • Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 89:2, s. 1184-1190
  • Tidskriftsartikel (refereegranskat)abstract
    • The electrical and optical properties of carbon-nitride CNx films (O=x=0.25) deposited by unbalanced reactive magnetron sputtering from a graphite target in mixed Ar/N2 discharges at a substrate temperature of 350°C have been investigated. Pure C films exhibit a dark conductivity at room temperature of 250 O-1 cm-1, which grows up to 250 O-1 cm-1 for CNx films with N content of 20%. For CNx films, temperature-dependent conductivity measurements suggest that two electron conduction processes exist in the investigated temperature range 130
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9.
  • Broitman, E., et al. (författare)
  • Mechanical and tribological properties of CNx films deposited by reactive magnetron sputtering
  • 2001
  • Ingår i: Wear. - 0043-1648 .- 1873-2577. ; 248:1-2, s. 55-64
  • Tidskriftsartikel (refereegranskat)abstract
    • The hardness, elasticity, wear rate and friction coefficient of carbon nitride (CNx) films of defined microstructure and composition are presented. CNx films were deposited by dc reactive magnetron sputtering from a C target in N2/Ar plasma. Films were grown on Si (001), Ni, and HSS substrates to thickness of ~0.5 µm at a total pressure of 3 mTorr with the N2 fraction varied from 0 to 1, and the substrate temperature Ts, varied from ambient to 350°C. The mechanical and tribological properties of the coatings were evaluated by nanoindentation and dry ball-on-disk test. For CNx (0 = x = 0.35) films deposited below 200°C (amorphous structure), the elastic recovery and hardness do not change significantly with increasing N concentration, however, the friction coefficient increases from 0.19 to 0.45, while the coating wear rate is low. For CNx (0 = x = 0.15) films grown at Ts = 350°C, where a transition from a graphite-like to a "fullerene-like" phase occurs, a dramatic increase in hardness and elasticity is observed. Furthermore, the rms surface roughness decreases from 15.0 to 0.4 nm. For 0.15 = x = 0.20, CNx films deposited at Ts = 350°C (fullerene-like phase) exhibit a smooth surface, high hardness and elasticity (~90% recovery), and a coefficient of friction against hard steel of ~0.25. For all substrates, film friction coefficient tends to increase as the nitrogen content in the film is increased. Results also indicate the formation of a transfer layer which improves the tribological properties of the films. © 2001 Elsevier Science B.V. All rights reserved.
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10.
  • Cagnoli, Patricia, et al. (författare)
  • Reduced Insular Glutamine and N-Acetylaspartate in Systemic Lupus Erythematosus: A Single-Voxel H-1-MR Spectroscopy Study
  • 2013
  • Ingår i: Academic Radiology. - : Elsevier BV. - 1878-4046 .- 1076-6332. ; 20:10, s. 1286-1296
  • Tidskriftsartikel (refereegranskat)abstract
    • Rationale and Objectives: To investigate for differences in metabolic concentrations and ratios between patients with systemic lupus erythematosus (SLE) without (group SLE) and those with neurological symptoms (group NPSLE) compared to a healthy control (group HC) in three normal-appearing brain regions: the frontal white matter, right insula (RI), and occipital gray matter and whether changes in any of the metabolites or metabolic ratios are correlated to disease activity and other clinical parameters. Materials and Methods: Twenty patients with SLE (18 women and 2 men, age range 23.4-64.6 years, mean age 43.9 years), 23 NPSLE patients (23 women, age range 23.7-69.8 years, mean age 42.4 years), and 21 HC (19 women and 2 men, age range 21.0-65.7 years, mean age 43.4 years) were included. All subjects had conventional brain magnetic resonance imaging and H-1 single-voxel spectroscopy, clinical assessment, and laboratory testing. Results: NPSLE patients had significantly reduced N-acetylaspartate (NAA)/creatine compared to HC (P = .02) and SLE patients (P = .01) in the RI. Lower glutamine/creatine levels were also detected in RI in both patient groups and in frontal white matter in NPSLE patients compared to HC (P = .01, P = .02). NAA/Cr ratio in the RI was significantly negatively correlated with the Systemic Lupus Erythematosus Disease Activity Index (r = -0.41; P = .008), and patients with active SLE symptoms also had a trend toward lower NAA/creatine ratios (1.02 vs 1.12; P = .07). Conclusions: The present data support previous findings of abnormal metabolic changes in normal-appearing regions in the brain of both SLE and NPSLE patients and raise the possibility that especially NAA, glutamine, and glutamate may be additional biomarkers for cerebral disease activity in SLE patients as these early metabolic changes occur in the brain of SLE patients before neurologic and imaging manifestations become apparent.
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  • Resultat 1-10 av 47

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