| 1. |
- Asplund, Carl, et al.
(författare)
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1260 nm InGaAs vertical-cavity lasers
- 2002
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Ingår i: Electronics Letters. - : Institution of Engineering and Technology (IET). - 0013-5194 .- 1350-911X. ; 38:13, s. 635-636
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Tidskriftsartikel (refereegranskat)abstract
- The fabrication and performance of highly strained double-quantum well InGaAs/GaAs vertical-cavity lasers with record-long emission wavelength of 1260 nm at room temperature is reported. Depending on device diameter, the minimum threshold current is in the low mA-regime while the maximum output power exceeds 1 mW. The devices work continuous-wave over a wide temperature range of at least 10-120degrees C.
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| 2. |
- Asplund, Carl, et al.
(författare)
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Optimization of MOVPE-grown GaInNAs/GaAs quantum wells for 1.3-μm laser applications
- 2002
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Konferensbidrag (refereegranskat)abstract
- The effects of high group-V precursor flows during metal-organic vapor phase epitaxial growthof GaInNAs QWs are investigated. It is shown that photoluminescence line width, waferuniformity, and sensitivity to growth temperature can be improved using V/III ratios in excess of2000. Broad area GaInNAdGaAs SQW lasers with dimensions 100 x 820 pm2 grown under theseconditions have threshold current densities as low as 660 kA/cm2 at 1.26 pm emission wavelength.
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| 3. |
- Bernabé, S., et al.
(författare)
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Highly integrated VCSEL-based 10Gb/s miniature optical sub-assembly
- 2005
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Ingår i: Proceedings - Electronic Components and Technology Conference. - Lake Buena Vista, FL : IEEE. ; , s. 1333-1338
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Konferensbidrag (refereegranskat)abstract
- In order to fit with the present and future needs of the Datacom transceiver market, newly designed high rate transmitter optical subassemblies (TOSAs) have to be compact, low cost and compatible with mass production. We propose here an innovative design strategy that reaches all these targets by integrating a 10Gbps 850nmVCSEL laser diode and its laser driver with other functionalities (e.g. power monitoring and thermal monitoring) in a small form factor package. Taking advantages of the optical properties of the VCSEL and using flip-chip techniques, the transmitter exhibits excellent hyperfrequency performances and compatibility with mass production due to the use of collective manufacturing technologies and passive optical alignment. This versatile approach is also applicable to high rate receivers, parallel optics emitters, and singlemode low cost transmitter integrating long wavelength VCSELs.
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| 4. |
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| 5. |
- Chacinski, Marek, et al.
(författare)
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Single-mode 1.27 μm InGaAs vertical cavity surface-emitting lasers with temperature-tolerant modulation characteristics
- 2005
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 86:21, s. 211109-1-211109-3
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Tidskriftsartikel (refereegranskat)abstract
- The dynamic performance of InGaAs/GaAs 1.27 μ m single-mode vertical cavity surface emitting lasers (VCSELs) is presented. In order to reach such a long wavelength, the devices utilize highly strained double-quantum wells and a large detuning between the material gain peak and cavity resonance. It is found that the large detuning improves the temperature stability of both static and modulation characteristics. A resonance frequency of 7.8-9.5 GHz and optical power of 0.30 mW in fiber was maintained throughout the investigated temperature range of 20-90 ° C. The intrinsic response of the device suggests that long-wavelength InGaAs/GaAs VCSELs have the potential to be used as low cost uncooled optical transmitters at 10 Gbit/s. © 2005 American Institute of Physics. © 2005 American Institute of Physics.
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| 6. |
- Gilet, Ph., et al.
(författare)
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1.3 μm VCSELs : InGaAs/GaAs, GaInNAs/GaAs multiple quantum wells and InAs/GaAs quantum dots- Three candidates as active material
- 2007
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Ingår i: Vertical - Cavity Surface - Emitting Lasers XI. - San Jose, CA : SPIE. ; , s. F4840-F4840
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Konferensbidrag (refereegranskat)abstract
- In this article, we report our results on 1.3ÎŒm VCSELs for optical interconnection applications. Room temperature continuous-wave lasing operation is demonstrated for top emitting oxide-confined devices with three different active materials, highly strained InGaAs/GaAs(A) and GalnNAs/GaAs (B) multiple quantum wells (MQW) or InAs/GaAs (C) quantum dots (QD). Conventional epitaxial structures grown respectively by Metal Organic Vapour Phase Epitaxy (MOVPE), Molecular Beam Epitaxy (MBE) and MBE, contain rully doped GaAs/AlGaAs DBRs. All three epilayers are processed in the same way. Current and optical confinement are realized by selective wet oxidation. Circular apertures from 2 ÎŒm to 16 ÎŒm diameters are defined. At room temperature and in continuous wave operation, all three systems exhibit lasing operation at wavelengths above 1 275nm and reached 1 300nm for material (A). Typical threshold currents are in the range [1-10]mA and are strongly dependent firstly on oxide diameter and secondly on temperature. Room temperature cw maximum output power corresponds respectively to 1.77mW, 0.5mW and 0.6mW. By increasing driving current, multimode operation occurs at different level depending on the oxide diameter. In case (A), non conventional modal behaviors will be presented and explained by the presence of specific oxide modes. Thermal behaviors of the different devices have been compared. In case (A) and (C) we obtain a negative T0. We will conclude on the different active materials in terms of performances with respect to 1300nm VCSEL applications.
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| 7. |
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| 8. |
- Hammar, Mattias, et al.
(författare)
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1.3-mu m InGaAs vertical-cavity surface-emitting lasers
- 2005
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Ingår i: 2005 IEEE LEOS Annual Meeting Conference Proceedings (LEOS). - 0780392175 ; , s. 396-397
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Konferensbidrag (refereegranskat)abstract
- We report on the fabrication and performance of N-free InGaAs/GaAs 1.3-mu m range vertical-cavity surface-emitting lasers (VCSELs). Using optimized quantum-well (QW) growth conditions in combination with negative gain-cavity tuning, high-performance VCSELs with emission wavelength up to 1300 nm are realized. The performance figures include mA-range threshold currents, mW-range singlemode output power, continuous-wave operation up to 140 degrees C and 10 Gbit/s data transmission.
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| 9. |
- Marcks von Würtemberg, Rickard, et al.
(författare)
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1.3 μm InGaAs vertical-cavity surface-emitting lasers with mode filter for single mode operation
- 2004
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 85:21, s. 4851-4853
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Tidskriftsartikel (refereegranskat)abstract
- We report on the performance and analysis of 1.3 mum range InGaAs/GaAs vertical-cavity surface-emitting lasers (VCSELs) with an integrated mode filter consisting of a patterned silicon layer on the top distributer Bragg reflector. In this way, 1 mW of single mode power is obtained from a device with a wavelength of 1265 nm and a threshold current of 2.6 mA at room temperature. An effective index model is used to extract the internal and external losses of the VCSEL structure and to predict the modal losses with and without mode filter, thereby providing a useful design tool for single mode VCSELs.
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| 10. |
- Marcks von Würtemberg, Rickard, et al.
(författare)
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Fabrication and performance of 1.3-μm vertical cavity surface emitting lasers with InGaAs quantum well active regions grown on GaAs substrates
- 2004
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Ingår i: Proceedings of SPIE, the International Society for Optical Engineering. - : SPIE. - 0277-786X .- 1996-756X. ; 5443, s. 229-239
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Tidskriftsartikel (refereegranskat)abstract
- We describe the development of long-wavelength InGaAs/GaAs vertical-cavity surface emitting lasers (VCSELs). Using highly strained double-quantum wells (DQWs) in combination with negative gain-cavity detuning we have been able to realise such VCSELs with emission wavelength up to 1300 nm. High-performance device characteristics include mW-range output power, mA-range threshold currents, 10 Gbit/s data transmission and very good temperature stability with continuous-wave operation up to at least 140degreesC. Singlemode emission is realised using an integrated mode filter consisting of a patterned silicon layer on the out-coupling mirror surface, yielding output power and threshold currents for 1270-nm devices of 1.2 - 0.5 mW and 2.3 - 0.6 mA, respectively, over a temperature interval of 10 - 140degreesC. Multimode devices have been found to deliver more than 2 mW at 1290 nm. Preliminary lifetime measurements do not reveal any intrinsic reliability problems related to the highly strained quantum wells.
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