| 1. |
- Malm, B. Gunnar, et al.
(författare)
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Base resistance scaling for SiGeC HBTs with a fully nickel-silicided extrinsic base
- 2005
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Ingår i: IEEE Electron Device Letters. - : IEEE Press. - 0741-3106 .- 1558-0563. ; 26:4, s. 246-248
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Tidskriftsartikel (refereegranskat)abstract
- A novel SiGeC HBT process with a quasi-self-aligned emitter-base architecture and a fully nickel-silicided extrinsic base region has been developed. A very low total base resistance R-B was achieved along with simultaneous NiSi formation on the polycrystalline emitter and collector regions. Uniform silicide formation was obtained across the wafer, and the resistivity. of the Ni(SiGe:C) silicide layer was 24 mu Omega (.) cm. About 50-100 nm of lateral growth of silicide,. underneath the emitter pedestal was observed. DC and HF results with balanced f(T)/f(MAX) values of 41/42 GHz were demonstrated for 0.5 X 10 mu m(2) transistors.
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| 2. |
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| 3. |
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| 4. |
- Suvar, E., et al.
(författare)
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A base-collector architecture for SiGeHBTs using low-temperature CVD epitaxy combined with chemical-mechanical polishing
- 2002
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Ingår i: Physica Scripta. - 0031-8949 .- 1402-4896. ; T101, s. 64-66
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Tidskriftsartikel (refereegranskat)abstract
- A new collector technology intended for an integrated high-speed SiGe heterojunction bipolar transistor (HBT) is reported. The collector was fabricated by selective epitaxial growth (SEG) using chemical vapor deposition at 770degreesC under reduced pressure (20 torr) using SiH2Cl2 as silicon precursor and PH3 as n-type dopant source. Chemical-mechanical polishing (CMP) was applied to the overgrown SEG collector in order to achieve a smooth surface in level with the surrounding oxide. Finally, a SiGe base doped with boron was deposited using non-selective epitaxial growth (NSEG) at 650degreesC. The topography of the collector is inspected after each process step by atomic force microscopy and the topography of the completed collector/base stack indicates that this structure is promising for fabrication of the emitter window. A further advantage with the CMP procedure is the elimination of phosphorous segregation as evidenced by secondary ion mass spectroscopy of the base-collector stack.
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| 5. |
- Haralson, Erik, et al.
(författare)
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NiSi integration in a non-selective base SiGeCHBT process
- 2005
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Ingår i: Materials Science in Semiconductor Processing. - : Elsevier BV. - 1369-8001 .- 1873-4081. ; 8:03-jan, s. 245-248
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Tidskriftsartikel (refereegranskat)abstract
- A self-aligned nickel silicide (salicide) process is integrated into a non-selective base SiGeC HBT process. The device features a unique, fully silicided base region that grows laterally under the emitter pedestal. This Ni(SiGe) formed in this base region was found to have a resistivity of 23-24 muOmega cm. A difference in the silicide thickness between the boron-doped SiGeC extrinsic base region and the in situ phosphorous-doped emitter region is observed and further analyzed and confirmed with a blanket wafer silicide study. The silicided device exhibited a current gain of 64 and HF device performance of 39 and 32 GHz for f(t) and f(MAX), respectively.
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