| 1. |
- Pankratov, Dmitry, et al.
(author)
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The influence of nanoparticles on enzymatic bioelectrocatalysis
- 2014
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In: RSC Advances. - : Royal Society of Chemistry. - 2046-2069. ; 4:72, s. 38164-38168
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Journal article (peer-reviewed)abstract
- In nearly all papers concerning enzyme–nanoparticle based bioelectronic devices, it is stated that the presence of nanoparticles on electrode surfaces per se enhances bioelectrocatalysis, although the reasons for that enhancement are often unclear. Here, we report detailed experimental evidence that neither an overpotential of bioelectrocatalysis, nor direct electron transfer and bioelectrocatalytic reaction rates for an adsorbed enzyme depend on the size of nanoparticles within the range of 20–80 nm, i.e. for nanoparticles that are considerably larger than the enzyme molecules.
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| 2. |
- Ahvenniemi, Esko, et al.
(author)
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Recommended reading list of early publications on atomic layer deposition-Outcome of the "Virtual Project on the History of ALD"
- 2017
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In: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films. - : American Vacuum Society. - 0734-2101 .- 1520-8559. ; 35:1
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Research review (peer-reviewed)abstract
- Atomic layer deposition (ALD), a gas-phase thin film deposition technique based on repeated, self-terminating gas-solid reactions, has become the method of choice in semiconductor manufacturing and many other technological areas for depositing thin conformal inorganic material layers for various applications. ALD has been discovered and developed independently, at least twice, under different names: atomic layer epitaxy (ALE) and molecular layering. ALE, dating back to 1974 in Finland, has been commonly known as the origin of ALD, while work done since the 1960s in the Soviet Union under the name "molecular layering" (and sometimes other names) has remained much less known. The virtual project on the history of ALD (VPHA) is a volunteer-based effort with open participation, set up to make the early days of ALD more transparent. In VPHA, started in July 2013, the target is to list, read and comment on all early ALD academic and patent literature up to 1986. VPHA has resulted in two essays and several presentations at international conferences. This paper, based on a poster presentation at the 16th International Conference on Atomic Layer Deposition in Dublin, Ireland, 2016, presents a recommended reading list of early ALD publications, created collectively by the VPHA participants through voting. The list contains 22 publications from Finland, Japan, Soviet Union, United Kingdom, and United States. Up to now, a balanced overview regarding the early history of ALD has been missing; the current list is an attempt to remedy this deficiency.
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| 3. |
- Kauppinen, Christoffer, et al.
(author)
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Atomic layer etching of gallium nitride (0001)
- 2017
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In: Journal of Vacuum Science and Technology A. - : American Vacuum Society. - 0734-2101. ; 35:6
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Journal article (peer-reviewed)abstract
- In this work, atomic layer etching (ALE) of thin film Ga-polar GaN(0001) is reported in detail using sequential surface modification by Cl2 adsorption and removal of the modified surface layer by low energy Ar plasma exposure in a standard reactive ion etching system. The feasibility and reproducibility of the process are demonstrated by patterning GaN(0001) films by the ALE process using photoresist as an etch mask. The demonstrated ALE is deemed to be useful for the fabrication of nanoscale structures and high electron mobility transistors and expected to be adoptable for ALE of other materials.
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| 4. |
- Koksharov, Yu.A., et al.
(author)
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Magnetostatic interactions in planar ring-like nanoparticle structures
- 2006
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In: Thin Solid Films. - : Elsevier BV. - 0040-6090. ; 515, s. 731-734
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Journal article (peer-reviewed)abstract
- Numerical calculations of equilibrium state energies and local magnetic fields in planar ring-like nanoparticle structures were performed. The dipole–dipole, Zeeman and magnetic anisotropy interactions were included into the model. The result of their competition depends on the value of the external magnetic field, magnetic parameters of an individual nanoparticle, size and shape of the structures. Flux-closed vortexes, single domain, two- domain ‘‘onion’’-like, ‘‘hedgehog’’-like and more complex spin structures can be realized. The critical field, providing a sharp transition from the flux-closed vortex to the ‘‘onion’’-like state, can be regulated by a variation of the particle magnetization and anisotropy constant, their easy directions, and particle space arrangement.
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| 5. |
- Nebol'sin, Valery A., et al.
(author)
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Capillary stability of vapor-liquid-solid crystallization processes and their comparison to Czochralski and Stepanov growth methods
- 2017
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In: Journal of Crystal Growth. - : Elsevier BV. - 0022-0248. ; 463, s. 46-53
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Journal article (peer-reviewed)abstract
- Epitaxial semiconductor nanowires grown with vapor-liquid-solid crystallization processes are very attractive nanoscale objects for many different applications. Despite extensive studies of the growth mechanism, there is still a lack of understanding of the growth process; in particular, the stability of the vapor-liquid-solid crystallization process has not previously been studied. Here we examine the capillary stability of the vapor-liquid-solid growth of nanowires and filamentary crystals with different diameters and demonstrate that the growth is stable for small Bond numbers when the meniscus height is linearly dependent on catalyst diameter. The capillary stability of vapor-liquid-solid growth is also compared with capillary stability in the Stepanov and Czochralski crystal growth methods; it is shown that capillary stability is not possible in the Czochralski method, although it is possible in the Stepanov growth method when the ratio of crystal diameter to shaper diameter is >1/2. These findings are important for better understanding and improved control of the growth of nanowires and filamentary crystals and indicate, for example, that large diameter filamentary crystals can be grown via a vapor-liquid-solid mechanism if the influence of gravity forces on the liquid catalytic particle shape can be reduced.
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| 6. |
- Nebol'sin, Valery A., et al.
(author)
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Thermodynamics of oxidation and reduction during the growth of metal catalyzed silicon nanowires
- 2019
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In: Journal of Crystal Growth. - : Elsevier BV. - 0022-0248. ; 505, s. 52-58
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Journal article (peer-reviewed)abstract
- We have studied the thermodynamics of oxide formation, and the recovery of silicon and the metal catalysts from the dissociation of their respective oxides during the growth process of Si nanowires (NWs) under the Vapor → Liquid Droplet → Solid (VLS) mechanism. It is demonstrated that Si NWs under growth temperatures are thermodynamically unstable in any gas phase containing even a small concentration of O2, and under favorable kinetic conditions Si NWs should entirely convert into dioxide (SiO2). Thermal dissociation of SiO2 in the growth conditions for NWs is practically impossible as it would require either lowering the pressure of O2 to an unachievable, critically low value or raising the temperature to a point which is impossible to reach in ordinary conditions. Decreasing the diameter, i.e., increasing the Si NW dispersity, leads to an increase in the interaction with O2 and this O2 will be held more tightly by Si. Thus, thinner NWs should oxidize stronger than thicker ones. The main metal catalysts for NW growth, as well as Si, are characterized by significant affinity with O2 and inconvertible oxide formation reactions. The most stable Si NW growth is observed with metals (Au, Pt, Cu, Ni, etc.) whose oxides are less stable than SiO2. Only metals with a lower affinity to O2 than to H2 or any other reducing agent are applicable to guarantee the recovery process when used as a catalyst for the growth of NWs.
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