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Sökning: WFRF:(Svedberg I L)

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  • Carlsson, Christina, et al. (författare)
  • Patientföreningarna som företrädare och röst
  • 2006
  • Ingår i: Det civila samhället som forskningsfält. Nya avhandlingar i ett nytt sekel. - 9178447283 - 9789178447282 ; , s. 38-49
  • Bokkapitel (övrigt vetenskapligt/konstnärligt)
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  • Sellgren, C. M., et al. (författare)
  • GRK3 deficiency elicits brain immune activation and psychosis
  • 2021
  • Ingår i: Molecular Psychiatry. - : Springer Science and Business Media LLC. - 1359-4184 .- 1476-5578. ; 26, s. 6820-6832
  • Tidskriftsartikel (refereegranskat)abstract
    • The G protein-coupled receptor kinase (GRK) family member protein GRK3 has been linked to the pathophysiology of schizophrenia and bipolar disorder. Expression, as well as protein levels, of GRK3 are reduced in post-mortem prefrontal cortex of schizophrenia subjects. Here, we investigate functional behavior and neurotransmission related to immune activation and psychosis using mice lacking functional Grk3 and utilizing a variety of methods, including behavioral, biochemical, electrophysiological, molecular, and imaging methods. Compared to wildtype controls, the Grk3(-/-) mice show a number of aberrations linked to psychosis, including elevated brain levels of IL-1 beta, increased turnover of kynurenic acid (KYNA), hyper-responsiveness to D-amphetamine, elevated spontaneous firing of midbrain dopamine neurons, and disruption in prepulse inhibition. Analyzing human genetic data, we observe a link between psychotic features in bipolar disorder, decreased GRK expression, and increased concentration of CSF KYNA. Taken together, our data suggest that Grk3(-/-) mice show face and construct validity relating to the psychosis phenotype with glial activation and would be suitable for translational studies of novel immunomodulatory agents in psychotic disorders.
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  • Kassamakova, L, et al. (författare)
  • Al/Si ohmic contacts to p-type 4H-SiC for power devices
  • 2000
  • Ingår i: Materials Science Forum. - 0255-5476 .- 1662-9752. ; 338-3, s. 1009-1012
  • Tidskriftsartikel (refereegranskat)abstract
    • The formation of Al/Si/p-4H SiC ohmic contacts at temperatures as low as 750 degreesC is reported in this paper. The dependence of electrical properties and contact morphology have been investigated as a function of the annealing regime in the interval 600-700 degreesC. The lowest contact resistivity of 3.8x10(-5) Omega .cm(2) was obtained at 700 degreesC annealing, however the most reproducible results were in the low 10(-4) Omega .cm(2) range. It has been established that the predominate current transport mechanism in the Al/Si/SiC contacts is thermionic-field emission. Atomic force microscopy showed that the addition of Si to the contact layer improves its morphology, and the pitting of annealed Al is not observed. The contacts developed are stable during ageing at 500 degreesC and at operating temperatures up to 450 degreesC. After the contacts testing with current density of 10(3) A/cm(2) at temperatures up to 450 degreesC, their contact resistivity decreases slightly.
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