| 1. |
- Booker, Ian Don, et al.
(författare)
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Comparison of post-growth carrier lifetime improvement methods for 4H-SiC epilayers
- 2012
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Ingår i: Silicon Carbide And Related Materials 2011, Pts 1 And 2. - : Trans Tech Publications Inc.. - 9783037854198 ; , s. 285-288, s. 285-288
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Konferensbidrag (refereegranskat)abstract
- We compare two methods for post-growth improvement of bulk carrier lifetime in 4H-SiC: dry oxidations and implantations with either 12C or 14N, followed by high temperature anneals in Ar atmosphere. Application of these techniques to samples cut from the same wafer/epilayer yields 2- to 11-fold lifetime increases, with the implantation/annealing technique shown to give greater maximum lifetimes. The maximum lifetimes reached are ∼5 μs after 12C implantation at 600 °C and annealing in Ar for 180 minutes at 1500 °C. At higher annealing temperatures the lifetimes decreases, a result which differs from reports in the literature.
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| 2. |
- Jacob, A P, et al.
(författare)
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Cryogenic performance of ultrathin oxide MOS capacitors with in situ doped p(+) poly-Si1-xGex and poly-Si gate materials
- 2002
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Ingår i: Semiconductor Science and Technology. - : Iop Publishing Ltd. - 0268-1242 .- 1361-6641. ; 17:9, s. 942-946
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Tidskriftsartikel (refereegranskat)abstract
- A low-temperature electrical characterization of ultrathin oxide MOS capacitors with p(+) poly-Si1-xGex and poly-Si gate is performed. The investigated structures are suitable for future nano-scaled high speed MOSFETs. The aim of this study is to compare the low-temperature performance of poly-Si1-xGex and poly-Si gate MOS structures in the nanoscale channel length regime. Apart from the significant change in the flat band voltage, the result shows that all the poly-Si and poly-Si1-xGex gated MOS structures exhibit two centres of polarity change (zero-temperature coefficients) in capacitance. The second polarity change leads to an exclusive phenomenon in these structures. The low-temperature capacitance is found to be less than high-temperature capacitance at strong accumulation and this is in contrast to what has been observed so far in metal-gated capacitors. It is also observed that the temperature dependence of the tunnelling current is only on the oxide thickness and not on the gate material used.
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| 3. |
- Lee, Hyung-Seok, et al.
(författare)
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1200 V 4H-SiC BJTs with a Common Emitter Current Gain of 60 and Low On-resistance
- 2009
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Ingår i: Materials Science Forum. - : Trans Tech Publications Inc.. - 0255-5476 .- 1662-9752. ; 600-603, s. 1151-1154
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Tidskriftsartikel (refereegranskat)abstract
- This paper reports a 4H-SiC bipolar junction transistor (BJT) with a breakdown voltage (BVCEO) of 1200 V, a maximum current gain (beta) of 60 and the low on-resistance (Rsp-on)of 5.2 m Omega cm(2). The high gain is attributed to an improved surface passivation SiO2 layer which was grown in N2O ambient in a diffusion furnace. The SiC BJTs with passivation oxide grown in N2O ambient show less emitter size dependence than reference SiC BJTs, with conventional SiO2 passivation, due to a reduced surface recombination current. SiC BJT devices with an active area of 1.8 mm x 1.8 mm showed a current gain of 53 in pulsed mode and a forward voltage drop Of V-CE=2V at I-C=15 A (J(C)=460 A/cm(2)).
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