| 1. |
- Vidarsson, Arnar M., et al.
(författare)
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Observations of very fast electron traps at SiC/high-κ dielectric interfaces
- 2023
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Ingår i: APL Materials. - : AIP Publishing. - 2166-532X. ; 11:11
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Tidskriftsartikel (refereegranskat)abstract
- Very fast interface traps have recently been suggested to be the main cause behind poor channel-carrier mobility in SiC metal-oxide-semiconductor field effect transistors. It has been hypothesized that the NI traps are defects located inside the SiO2 dielectric with energy levels close to the SiC conduction band edge and the observed conductance spectroscopy signal is a result of electron tunneling to and from these defects. Using aluminum nitride and aluminum oxide as gate dielectrics instead of SiO2, we detect NI traps at these SiC/dielectric interfaces as well. A detailed investigation of the NI trap density and behavior as a function of temperature is presented and discussed. Advanced scanning transmission electron microscopy in combination with electron energy loss spectroscopy reveals no SiO2 at the interfaces. This strongly suggests that the NI traps are related to the surface region of the SiC rather than being a property of the gate dielectric.
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| 2. |
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| 3. |
- Allerstam, Fredrik, 1978, et al.
(författare)
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A study of deep energy-level traps at the 4H-SiC/SiO2 interface and their passivation by hydrogen
- 2009
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Ingår i: Materials Science Forum. - 1662-9752 .- 0255-5476. ; 600-603, s. 755-758
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Konferensbidrag (refereegranskat)abstract
- This study is focused on characterization of deep energy-level interface traps formed during sodium enhanced oxidation of n-type Si face 4H-SiC. The traps are located 0.9 eV below the SiC conduction band edge as revealed by deep level transient spectroscopy. Furthermore these traps are passivated using post-metallization anneal at 400°C in forming gas ambient. © (2009) Trans Tech Publications, Switzerland.
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| 4. |
- Allerstam, Fredrik, 1978, et al.
(författare)
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Comparison between oxidation processes used to obtain the high inversion channel mobility in 4H-SiC MOSFETs
- 2007
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Ingår i: Semiconductor Science and Technology. - : IOP Publishing. - 1361-6641 .- 0268-1242. ; 22:4, s. 307-311
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Tidskriftsartikel (refereegranskat)abstract
- In this work two oxidation methods aimed at improving the silicon face 4H-SiC/SiO 2 interface are compared. One is an oxidation in N 2 O performed in a quartz tube using quartz sample holders and the other is a dry oxidation performed in an alumina tube using alumina sample holders. In n-type metal oxide semiconductor (MOS) capacitors the interface state density near the SiC conduction band edge is estimated using capacitance-voltage (C-V) and thermal dielectric relaxation current (TDRC) measurements. N-channel metal oxide semiconductor field effect transistors (MOSFETs) are characterized by current-voltage (I-V) techniques and the inversion channel mobility is extracted. It is shown that the high inversion channel mobility (154 cm 2 V -1 s -1 ) seen in samples oxidized using alumina correlates with a low interface trap density (3.6 × 10 11 cm -2 ). In the case of N 2 O oxidation the mobility is lower (24 cm 2 V -1 s -1 ) and the interface trap density is higher (1.6 × 10 12 cm -2 ). Room temperature C-V measurements are of limited use when studying traps near the conduction band edge in MOS structures while the TDRC measurement technique gives a better estimate of their density. © 2007 IOP Publishing Ltd.
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| 5. |
- Allerstam, Fredrik, 1978, et al.
(författare)
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Effect of high temperature oxidation of 4H-SiC on the near-interface traps measured by TDRC
- 2009
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Ingår i: Materials Science Forum. - 1662-9752 .- 0255-5476. - 9780878493340 ; 615 617, s. 537-540
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Konferensbidrag (refereegranskat)abstract
- In this work the effect of oxidation temperature of 4H-SiC on the density of nearinterface traps is studied. It is seen that the portion of traps with slower emission times decreases with increasing oxidation temperature. Despite this reduction, high temperature oxidation alone is not useful to achieve low density of interface traps at the SiO2/4H-SiC interface.
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| 6. |
- Allerstam, Fredrik, 1978, et al.
(författare)
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Formation of deep traps at the 4H-SiC/SiO2 interface when utilizing sodium enhanced oxidation
- 2007
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Ingår i: Materials Science Forum. - 1662-9752 .- 0255-5476. ; 556-557, s. 517-520
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Konferensbidrag (refereegranskat)abstract
- This paper reports studies of deep acceptor-type interface traps at the 4H-SiC/SiO2 interface. These traps are created during sodium enhanced oxidation of Si-terminated 4H-SiC. The trap concentration is above 3×1012 cm-2 and their activation energy is larger than 0.8 eV.
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| 7. |
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| 8. |
- Andersson, Kristoffer, 1976, et al.
(författare)
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Fabrication and characterization of field-plated buried-gate SiC MESFETs
- 2006
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Ingår i: IEEE Electron Device Letters. - 0741-3106 .- 1558-0563. ; 27:7, s. 573-575
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Tidskriftsartikel (refereegranskat)abstract
- Silicon carbide (SiC) MESFETs were fabricated using a standard SiC MESFET structure with the application of the "buried-channel" and field-plate (FP) techniques in the process. FPs combined with a buried-gate are shown to be favorable concerning output power density and power-added efficiency (PAE), due to higher breakdown voltage and decreased output conductance. A very high power density of 7.8 W/mm was measured on-wafer at 3 GHz for a two-finger 400-/spl mu/m gate periphery SiC MESFET. The PAE for this device was 70% at class AB bias. Two-tone measurements at 3 GHz /spl plusmn/ 100 kHz indicate an optimum FP length for high linearity operation.
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| 9. |
- Bergsten, Johan, 1988, et al.
(författare)
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Electron Trapping in Extended Defects in Microwave AlGaN/GaN HEMTs with Carbon-Doped Buffers
- 2018
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Ingår i: IEEE Transactions on Electron Devices. - : IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC. - 1557-9646 .- 0018-9383. ; 65:6, s. 2446-2453
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Tidskriftsartikel (refereegranskat)abstract
- This paper investigates AlGaN/GaN high-electron mobility transistors (HEMTs) fabricated on epistructures with carbon (C)-doped buffers. Metalorganic chemical vapor deposition is used to grow two C-doped structures with different doping profiles, using growth parameters to change the C incorporation. The C concentration is low enough to result in n-type GaN. Reference devices are also fabricated on a structure using iron (Fe) as dopant, to exclude any process related variations and provide a relevant benchmark. All devices exhibit similar dc performance. However, pulsed I - V$ measurements show extensive dispersion in the C-doped devices, with values of dynamic R-mathrm-scriptscriptstyle ON 3 -4 times larger than in the dc case. Due to the extensive trapping, the devices with C-doped buffers can only supply about half the output power of the Fe-doped sample, 2.5 W/mm compared to 4.8 W/mm at 10 GHz. In drain current transient measurements, the trap filling time is varied, finding large prevalence of trapping at dislocations for the C-doped samples. Clusters of C around the dislocations are suggested to be the main cause for the increased dispersion.
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| 10. |
- Booker, Ian Don, et al.
(författare)
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Carrier Lifetime Controlling Defects Z(1/2) and RB1 in Standard and Chlorinated Chemistry Grown 4H-SiC
- 2014
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Ingår i: Crystal Growth & Design. - : American Chemical Society (ACS). - 1528-7483 .- 1528-7505. ; 14:8, s. 4104-4110
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Tidskriftsartikel (refereegranskat)abstract
- 4H-SiC epilayers grown by standard and chlorinated chemistry were analyzed for their minority carrier lifetime and deep level recombination centers using time-resolved photoluminescence (TRPL) and standard deep level transient spectroscopy (DLTS). Next to the well-known Z(1/2) deep level a second effective lifetime killer, RB1 (activation energy 1.05 eV, electron capture cross section 2 x 10(-16) cm(2), suggested hole capture cross section (5 +/- 2) x 10(-15) cm(2)), is detected in chloride chemistry grown epilayers. Junction-DLTS and bulk recombination simulations are used to confirm the lifetime killing properties of this level. The measured RB1 concentration appears to be a function of the iron-related Fe1 level concentration, which is unintentionally introduced via the corrosion of reactor steel parts by the chlorinated chemistry. Reactor design and the growth zone temperature profile are thought to enable the formation of RB1 in the presence of iron contamination under conditions otherwise optimal for growth of material with very low Z(1/2) concentrations. The RB1 defect is either an intrinsic defect similar to RD1/2 or EH5 or a complex involving iron. Control of these corrosion issues allows the growth of material at a high growth rate and with high minority carrier lifetime based on Z(1/2) as the only bulk recombination center.
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