| 1. |
- Deppert, Knut, et al.
(författare)
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Aerosol fabrication of nanocrystals of InP
- 1999
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Ingår i: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. - 0021-4922. ; 38:2 B, s. 1056-1059
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Tidskriftsartikel (refereegranskat)abstract
- Nanocrystals of indium phosphide, with diameters of around 10nm, have been produced via an aerosol route. The method is based on the formation of monodisperse indium droplets and the subsequent reaction with phosphine at elevated temperature. The size of the final InP nanocrystal is self-limited by the size of the introduced size-selected In droplet. This size can be tuned carefully, thus this method allows a narrow size distribution of the nanocrystals. The kinetics of the reaction of In to produce InP depends on the temperature and the phosphine flow. Extensive high resolution transmission electron microscopy studies lead to a consistent picture of the process. Our approach opens the possibility for efficient production of size-selected semiconductor nanocrystals and it will allow new types of self-assembly and control of quantum dots.
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| 2. |
- Deppert, Knut, et al.
(författare)
-
Size-selected nanocrystals of III-V semiconductor materials by the aerotaxy method
- 1998
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Ingår i: Journal of Aerosol Science. - 0021-8502. ; 29:5-6, s. 737-748
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Tidskriftsartikel (refereegranskat)abstract
- In this paper we present a fabrication route to produce size-selected III-V semiconductor nanocrystals via a simple, reliable, and efficient aerosol route. Since this approach includes the reaction of aerosol particles and a self-organized growth of a new compound, all in the aerosol phase, we call this process aerotaxy. Size-selected nanocrystals of different III-V compounds in a diameter range below 20 nm were fabricated using this method. Through the reaction of arsine with gallium droplets or of phosphine with indium droplets, GaAs and InP clusters were formed. Our approach opens the possibility to produce contamination-free and size-selected nanocrystals of compound semiconductor materials with considerable freedom in composition and size.
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