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- Ali, M., et al.
(författare)
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Reduced photoluminescence from InGaN/GaN multiple quantum well structures following 40 MeV iodine ion irradiation
- 2009
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Ingår i: Physica. B, Condensed matter. - : Elsevier. - 0921-4526 .- 1873-2135. ; 404:23-24, s. 4925-4928
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Tidskriftsartikel (refereegranskat)abstract
- The effects following ion irradiation of GaN-based devices are still limited. Here we present data on the photoluminescence (PL) emitted from InGaN/GaN multiple quantum well (MQW) structures, which have been exposed to 40 MeV I ion irradiation. The PL is reduced as a function of applied ion fluence, with essentially no PL signal left above 1011 ions/cm2. It is observed that even the ion fluences in the 109 ions/cm2 range have a pronounced effect on the photoluminescence properties of the MQW structures. This may have consequences concerning application of InGaN/GaN MQW’s in radiation-rich environments, in addition to defect build-up during ion beam analysis.
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