| 1. |
- Törnevik, C., et al.
(författare)
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Adsorption of Sn onSi(111)7 × 7 : reconstructions in the monolayer regime
- 1994
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Ingår i: Surface Science. - 0039-6028. ; 314:2, s. 179-187
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Tidskriftsartikel (refereegranskat)abstract
- Different monolayer phases of Sn on Si(111)7 × 7 have been studied by means of scanning tunneling microscopy (STM), core-level photoelectron spectroscopy (XPS), and Rutherford backscattering spectrometry (RBS). The STM results show that 3 × 3 reconstructions are obtained for room-temperature deposition of 1 3 ML of Sn followed by sample annealing in a broad temperature range. A T4 Sn adatom 3 ×3 phase is formed for temperatures between 500 and 800°C, with a concentration of defects that is strongly dependent on the temperature and which is as high as 25% for the lowest temperatures. Above 825°C a second 3×3 adatom reconstruction is formed, a mosaic-like phase with a 1:1 mixture of Si and Sn atoms in T4 positions. The results from investigations of the higher coverage 2 3 × 2 3 reconstruction by XPS and RBS support the theory that this phase is a two-layer epitaxial Sn structure with all Si(111) dangling bonds saturated. The Sn coverage for this phase was determined to be between 1 and 1.2 ML. © 1994.
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| 2. |
- Wigren, C., et al.
(författare)
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Sm- and Yb-induced reconstructions of the Si(111) surface
- 1993
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Ingår i: Physical Review B. - 0163-1829. ; 48:15, s. 11014-11019
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Tidskriftsartikel (refereegranskat)abstract
- Low-energy electron diffraction, scanning tunneling microscopy, and photoelectron spectroscopy results from the submonolayer Sm- and Yb-induced surface structures are presented. Several similar metal-induced surface reconstructions are found to exist for Yb and Sm on Si(111) for low submonolayer coverages: 3×2, 5×1, and 7×1. At higher submonolayer coverage, Yb induces a 2×1 reconstruction while Sm induces a (3 × 3) R30°-like reconstruction. Yb is found to be divalent in all structures, whereas the Sm valence increases with increasing coverage. In the 3×2 structure only divalent Sm is present, in the 5×1 and 7×1 structures a small amount of trivalent Sm appears, and, finally, in the (3 × 3) R30°structure approximately half of the Sm atoms are trivalent. The surface Fermi-level position in the band gap for the different Sm and Yb reconstructions has been measured. The difference in valence stability between Sm and Yb is suggested to be the cause of the difference in the high-coverage structures found and the differences in pinning level for the two elements observed for the 5×1 and 7×1 structures. © 1993 The American Physical Society.
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| 3. |
- Göthelid, M., et al.
(författare)
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Sn-induced surface reconstructions on the Ge(111) surface studied with scanning tunneling microscopy
- 1992
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Ingår i: Surface Science. - 0039-6028. ; 271:3, s. L357-L361
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Tidskriftsartikel (refereegranskat)abstract
- Scanning tunneling microscopy (STM) has been used to study different Sn induced reconstructions on the Ge(111) surface; namely the (7 × 7), (5 × 5) and ( 3 × 3) R30° structures. The first two have been confirmed to be of the dimer adatom stacking faults (DAS) type with adatoms mainly being Sn. The ( 3 × 3)R30° superstructure was found at different Sn depositions. At 0.4 monolayer (ML) Sn coverage a homogeneous Sn adatom layer is adsorbed on the(1 × 1) surface in threefold sites directly over second-layer atoms (T4), while at low coverage, 0.1 ML, the top layer is a mixture of Sn and Ge atoms. We also propose the chemical identities of the different atoms seen in the STM images as related to their apparent height. © 1992.
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| 4. |
- Hammar, M., et al.
(författare)
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Surface atomic structure of reconstructed VC0.8(111) studied with scanning tunneling microscopy
- 1992
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Ingår i: Physical Review B. - 0163-1829. ; 45:11, s. 6118-6123
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Tidskriftsartikel (refereegranskat)abstract
- Scanning tunneling microscopy has been performed on the reconstructed polar surface of substoichiometric VC0.80(111). A mixture of (8×1) and (3 × 3) R30°reconstructed areas was found. The (8×1) periodicity could be determined to be the result of a square-lattice surface layer superimposed on the hexagonal substrate. As this square lattice must have its origin in strong and directed in-plane bonds with the relatively large length of about 2.9, it can be deduced to consist of vanadium atoms. Lateral positions of these vanadium surface atoms with respect to the substrate are suggested from the measured surface corrugation. The (3 × 3) R30°structure was found in small triangular areas which can, due to the measured step heights between the two reconstructions, be believed to be carbon terminated. The occurrence of a reconstructed surface with a reduced atomic concentration is in contrast to what is known for TiC(111) and NbC(111), both having stable (1×1) surfaces. A qualitative explanation for this difference is suggested. © 1992 The American Physical Society.
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| 5. |
- Johansson, U., et al.
(författare)
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The vacuum ultraviolet scanning photoelectron microscope at MAX-LAB
- 1995
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Ingår i: Review of Scientific Instruments. - : AIP Publishing. - 0034-6748 .- 1089-7623. ; 66:2, s. 1398-1400
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Tidskriftsartikel (refereegranskat)abstract
- The performance of a scanning photoelectron microscope at the MAX I storage ring in Lund is presented. The microscope utilizes undulator radiation in the energy range 15-150 eV and is comprised of a plane-grating monochromator with a Kirkpatrick-Baez objective and a gracing incidence ellipsoidal focusing mirror. The instrument with its high photon flux, 109-1010 photons/s, and narrow bandwidth, better than 0.2 eV, is excellently suited for high-resolution core-level spectroscopy and imaging of samples with lateral inhomogeneties in the micrometer range.
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| 6. |
- Nyholm, R., et al.
(författare)
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Submicrometer-resolution photoelectron-spectroscopy at MAX Lab
- 1989
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Ingår i: Review of Scientific Instruments. - : AIP Publishing. - 0034-6748 .- 1089-7623. ; 60:7, s. 2168-2171
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Tidskriftsartikel (refereegranskat)abstract
- The design of a photoemission microprobe beamline at the MAX laboratory is presented. The beamline will utilize the radiation from a 26 period undulator on the 550-MeV MAX storage ring. The beamline will be capable of providing about 1010 photons/s of monochromatized radiation (bandwidth better than 0.25 eV) in the energy range of 20 to 150 eV focused into a submicrometer focal spot. It will be used for scanning photoemission experiments with a lateral resolution better than 1 μm. The optical system is comprised of a plane-grating monochromator with a Kirkpatrick-Baez objective and a specially designed ellipsoidal focusing mirror.
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| 7. |
- Törnevik, C., et al.
(författare)
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Epitaxial growth of Sn on Si(111) : A direct atomic-structure determination of the (2 √3 ×2 √3) R30° reconstructed surface
- 1991
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Ingår i: Physical Review B. - 0163-1829. ; 44:23, s. 13144-13147
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Tidskriftsartikel (refereegranskat)abstract
- Scanning tunneling microscopy (STM) has been used to determine the surface atomic structure of Si(111)(23 ×2 3) -Sn. The topographic images show four resolved atoms in each (2 3 ×2 3) unit cell, and the structure is found to be onefold symmetric. Together with coverage measurements, the STM analysis implies that the reconstructed surface is an epitaxial Sn two-layer structure, where the atoms adopt a bonding configuration characteristic of -Sn. A three-dimensional structure model, in accordance with the obtained results, is proposed. © 1991 The American Physical Society.
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