| 1. |
- Bejarano Carmona, Manuel, et al.
(författare)
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A broadband SiGe Power Amplifier for E-band communication applications
- 2016
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Ingår i: 2015 Asia-Pacific Microwave Conference, APMC 2015 - Proceedings. - 9781479987658 ; 3
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Konferensbidrag (refereegranskat)abstract
- This work presents a broadband SiGe Power Amplifier (PA) for operation between 60-90 GHz covering both 71-76 GHz and 81-86 GHz E-Band sub-bands. It consists of a two-stage differential cascode amplifier using an LC-interstage matching network in the interface between the stages. Single-ended to differential conversion is accomplished by the use of two stacked 1-To-1 transformers, achieving a simulated insertion loss of 0.63 dB and 0.45 dB at input and output, respectively. The design has been implemented using Infineon B7HF200 0.18 pm SiGe HBT process with fp/fmax 200/250 GHz. Measured performance indicates that the PA delivers 12.6 dBm saturated output power (Psat) with 4.6% peak Power Added Efficiency (PAE) at 84 GHz while providing at least 6 dB of gain covering a frequency range from 62 to 90 GHz. The circuit consumes 102 mA from a 2.8 V power supply and occupies an area of 0.105 mm2.
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| 2. |
- Nilsson, Magnus, et al.
(författare)
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A 9-band WCDMA/EDGE transceiver supporting HSPA evolution
- 2011
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Ingår i: [Host publication title missing]. - 0193-6530. ; , s. 366-368
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Konferensbidrag (refereegranskat)abstract
- The future of cellular radio ICs lies in the integration of an ever-increasing number of bands and channel bandwidths. This paper presents a transceiver together with the associated discrete front-end components. The transceiver supports 4 EDGE bands and 9 WCDMA bands (l-VI and Vlll-X), while the radio can be configured to simultaneously support the 4 EDGE bands and up to 5 WCDMA bands: 3 high bands (HB) and 2 low bands (LB). The RX is a SAW-less homodyne composed of a main RX and a diversity RX. To reduce package complexity with so many bands, we chose to minimize the number of ports by using single-ended RF interfaces for both RX and TX. This saves seve ral package pins, but requires careful attention to grounding. The main RX has 8 LNA ports and the diversity RX has 5, with some LNAs supporting multiple bands. On the TX side, 2 ports are used for all EDGE bands and 4 for the WCDMA bands.
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| 3. |
- TIRED, TOBIAS, et al.
(författare)
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A 1.5 V 28 GHz beam steering SiGe PLL for an 81-86 GHz E-band transmitter
- 2016
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Ingår i: IEEE Microwave and Wireless Components Letters. - 1531-1309. ; 26:10, s. 843-845
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Tidskriftsartikel (refereegranskat)abstract
- This letter presents measurement results for a low supply voltage 28 GHz beam steering PLL, designed in a SiGe bipolar process with fT=200 GHz. The PLL, designed around a QVCO, is intended for a beam steering 81-86 GHz E-band transmitter. Linear phase control is implemented by variable current injection into a Gilbert type phase detector, with a measured nominal phase control sensitivity of 2.5 °/ μA . The demonstrated LO generation method offers great advantages in the implementation of beam steering mm-wave transmitters, since only the low frequency PLL reference signal of 1.75 GHz needs to be routed across the chip to the different transmitters. Except for an active loop filter, used to extend the locking range of the PLL, the design uses a low supply voltage of 1.5 V. The PLL obtains a measured in band phase noise of −107 dBc/Hz at 1 MHz offset. The power consumption equals 54 mW from the 1.5 V supply plus 1.8 mW for the variable supply of the active low pass filter.
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| 4. |
- Tired, Tobias, et al.
(författare)
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A 1V power amplifier for 81-86 GHz E-band
- 2014
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Ingår i: Analog Integrated Circuits and Signal Processing. - : Springer Science and Business Media LLC. - 0925-1030 .- 1573-1979. ; 80:3, s. 335-348
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Tidskriftsartikel (refereegranskat)abstract
- The design and layout of a two stage SiGe E-band power amplifier using a stacked transformer for output power combination is presented. In EM-simulations with ADS Momentum, at E-band frequencies, the power combiner consisting of two individual single turn transformers performs significantly better than a single 2:1 transformer with two turns on the secondary side. Imbalances in the stacked transformer structure are reduced with tuning capacitors for maximum gain and output power. At 84 GHz the simulated loss of the stacked transformer is as low as 1.35 dB, superseding the performance of an also presented alternative power combiner. The power combination allows for a low supply voltage of 1 V, which is beneficial since the supply can then be shared between the power amplifier and the transceiver, thereby eliminating the need of a separate voltage regulator. To improve the gain of the two-stage amplifier it employs a capacitive cross-coupling technique not yet seen in mm-wave SiGe PAs. Capacitive cross-coupling is an effective technique for gain enhancement but is also sensitive to process variations as shown by Monte Carlo simulations. To mitigate this two alternative designs are presented with the cross coupling capacitors implemented either with diode coupled transistors or with varactors. The PA is designed in a SiGe process with f T = 200 GHz and achieves a power gain of 12 dB, a saturated output power of 16 dBm and a 14 % peak PAE. Excluding decoupling capacitors it occupies a die area of 0.034 mm2.
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| 5. |
- Tired, Tobias, et al.
(författare)
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A 1V SiGe Power Amplifier for 81-86 GHz E-band
- 2013
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Ingår i: [Host publication title missing]. ; , s. 1-4
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Konferensbidrag (refereegranskat)abstract
- This paper presents an architecture for a SiGe E-band power amplifier using a stacked transformers for output power combination. According to simulations, at E-band frequencies, the power combiner consisting of two individual single turn transformers performs significantly better compared to a single common 2:1 transformer with two turns on the secondary side. The power combination allows for a low supply voltage of 1 V, which is beneficial since the supply can be shared between the power amplifier and the transceiver thereby eliminating the need of a separate voltage regulator. To improve the gain of the two-stage amplifier it employs a capacitive cross-coupling technique not yet seen in mm-wave SiGe PAs. The PA is designed in a SiGe process with fr = 200 GHz and achieves a power gain of 12dB, a saturated output power of 16dBm and a 14% peak PAE.
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| 6. |
- Tired, Tobias, et al.
(författare)
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A 28 GHz SiGe PLL for an 81-86 GHz E-band beam steering transmitter plus an I/Q phase imbalance detection and compensation circuit
- 2015
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Ingår i: Analog Integrated Circuits and Signal Processing. - : Springer Science and Business Media LLC. - 0925-1030 .- 1573-1979. ; 84:3, s. 383-398
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Tidskriftsartikel (refereegranskat)abstract
- This paper presents two circuits, a complete 1.5 V 28 GHz SiGe beam steering PLL and a standalone 28 GHz QVCO with I/Q phase imbalance detection and compensation. The circuits were designed in a SiGe process with f T = 200 GHz. The PLL is intended to be used for beam steering in an 81–86 GHz E-band transmitter. Phase control is implemented by DC current injection at the output of a Gilbert architecture phase detector showing a simulated phase control sensitivity of 1.2°/µA over a range close to 180°. The simulations use layout parasitics for the QVCO, frequency divider, and phase detector, and an electromagnetic model for the QVCO inductors. The divider is implemented with four cascaded divide-by-two current-mode-logic blocks for a reference frequency of 1.75 GHz. For closed loop simulations of PLL noise and stability, the QVCO is represented with a behavior model with added phase noise. This simulation technique enabled faster simulation time of the PLL. The PLL in band phase noise at 1 MHz offset equals −115 dBc/Hz. Excluding output buffers, the entire PLL consumes 52 mW plus a minimum 7 mW from a variable high voltage supply required to extend the PLL locking range. The measured phase noise of the standalone QVCO equals −100 dBc/Hz at 1 MHz offset. Since E-band radio links utilize higher order QAM modulation, the bit-error rate is sensitive to I/Q phase error. In the measured standalone QVCO with I/Q phase imbalance detection and compensation, the error is detected in two cross coupled active mixers that have an output DC level proportional to the phase error. The error can then be eliminated adjusting the bias of four varactors connected to the QVCO outputs. The current consumption of the chip equals 14 mA from a 1.5 V supply and 57 mA from a 2.5 V supply dedicated to the detector and 28 GHz output measurement buffers
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| 7. |
- Tired, Tobias, et al.
(författare)
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A 28 GHz SiGe QVCO and divider for an 81-86 GHz E-band beam steering transmitter PLL
- 2015
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Ingår i: NORCHIP : 32nd NORCHIP Conference, 27-28 October 2014, Tampere, Finland - 32nd NORCHIP Conference, 27-28 October 2014, Tampere, Finland. - 9781479954421
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Konferensbidrag (refereegranskat)abstract
- This paper presents a QVCO and divider for a 28 GHz SiGe PLL. It was designed in a SiGe process with fT= 200 GHz. The PLL is intended to be used for beam steering in an 81-86 GHz E-band transmitter. Phase control is implemented by programmable current injection into the loop filter. The simulations in Spectre use a layout extracted view with parasitics for the QVCO and the frequency divider and an ADS Momentum model for the QVCO inductors. The divider is implemented with four cascaded current-mode-logic (CML) blocks, for a reference frequency of 1.75 GHz. The low frequency parts of the PLL were represented with either Verilog-A or schematic models. The phase noise of the QVCO equals -105 dBc/Hz at 1MHz offset, while at the same offset the divider standalone has an input referred phase noise of -110 dBc/Hz. The phase control has been verified by transient simulations showing a phase control sensitivity of 1.5°/μA over a range exceeding 360°. With a supply of 1.5 V the QVCO and divider consumes 29 mA.
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| 8. |
- Tired, Tobias, et al.
(författare)
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A 28 GHz SiGe QVCO with an I/Q phase error detector for an 81-86 E-band transceiver
- 2015
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Ingår i: 2014 International Symposium on Integrated Circuits (ISIC). - 9781479948338 ; , s. 58-61
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Konferensbidrag (refereegranskat)abstract
- This paper presents a 28 GHz QVCO intended to be used in an 81-86 GHz E-band transceiver. E-band transceivers using e.g. 16 QAM modulation schemes are sensitive to I/Q phase error. Already a three degree error significantly degrades the bit error rate, and careful control of the phase error of the 28 GHz QVCO is therefore required. In the presented design the phase error can be tuned using four varactors, each connected to one of the QVCO outputs. The phase error is detected in two cross-coupled active mixers, creating a DC-level proportional to the phase error. The accuracy of the detector has been verified by Monte Carlo simulations showing a 3 sigma phase error of one degree. The QVCO is designed in a SiGe process with f T = 200 GHz. The current consumption is 14 mA from a 1.5 V supply and 57 mA from a 2.5 V supply. The 2.5 V supply is dedicated to the detector and output buffers. At 1 MHz offset the phase noise equals -105 dBc/Hz with a FOM of -181 dBc/Hz and a FOM T of -186 dBc/Hz. The die area equals 1.3 mm 2 .
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| 9. |
- TIRED, TOBIAS
(författare)
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A BiCMOS single ended multiband RF-amplifier and mixer with DC-offset and second order distortion suppression
- 2011
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Ingår i: Analog Integrated Circuits and Signal Processing. - : Springer Science and Business Media LLC. - 0925-1030 .- 1573-1979. ; 68:3, s. 269-283
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Tidskriftsartikel (refereegranskat)abstract
- Direct conversion receivers are widely used for full duplex mobile radio communication systems. This paper describes a novel SAW-less single-ended RF amplifier connected to a single-ended mixer with a feedback loop that suppresses the second-order distortion from TX cross modulation of the LO-leakage as well as DC-offset at the mixer output. In Monte Carlo simulations the design achieves +47 dBm minimum IIP2 with 32 dB conversion voltage gain. The advantage with the proposed architecture is that it is fully single-ended. Especially in multiband integrated radios this is highly desirable since the pin-count for the LNAs is reduced by half. The PCB routing of the RF input signal is simplified. The design requires two off-chip filter capacitors of non critical value intended to be placed on the laminate inside the package.
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| 10. |
- TIRED, TOBIAS, et al.
(författare)
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Comparison of two SiGe 2-stage E-band Power Amplifier Architectures
- 2017
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Ingår i: IEEE Asia Pacific Conference on Circuits and Systems, APCCAS 2016. - 9781509015702 ; 13, s. 666-669
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Konferensbidrag (refereegranskat)abstract
- This paper presents simulation and measurement results for two 2-stage E-band power amplifiers implemented in 0.18um SiGe technology with fT = 200 GHz. To increase the power gain by mitigating the effect of the base-collector capacitance, the first design uses a differential cascode topology with a 2.7 V supply voltage. The second design instead uses capacitive cross-coupling of a differential common emitter stage, previously not demonstrated in mm-wave SiGe PAs, and has a supply voltage of only 1.5V. Low supply voltage is advantageous since a common supply can then be shared between the transceiver and the PA. To maximize the power gain and robustness, both designs use a transformer based interstage matching. The cascode design achieves a measured power gain, S21 , of 16 dB at 92 GHz with 17GHz 3-dB bandwidth, and a simulated saturated output power, Psat , of 17 dBm with a 16% peak PAE. The cross-coupled design achieves a measured S21 of 10 dB at 93 GHz with 16 GHz 3-dB bandwidth, and a simulated Psat, of 15 dBm with 16% peak PAE. Comparing the measured and simulated results for the two amplifier architectures, the cascode topology is more robust, while the cross-coupled topology would benefit from a programmable cross-coupling capacitance.
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