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- Tavakoli Dastjerdi, Mohammad Hadi, 1984, et al.
(författare)
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InGaAs/InAlAs/AlAs Heterostructure Barrier Varactors on Silicon Substrate
- 2011
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Ingår i: IEEE Electron Device Letters. - 0741-3106 .- 1558-0563. ; 32:2, s. 140-142
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Tidskriftsartikel (refereegranskat)abstract
- We present the results of a study on epitaxial transferof InP-based heterostructure barrier varactor (HBV) materials onto a silicon substrate employing the low-temperature plasma activated bonding technique. The test diodes fabricated on the bonded samples exhibit symmetric electrical characteristics, over the temperature range of 25 ˚C–165 ˚C, and show no degradation compared to previously reported InP-based diodes. Moreover, the onset temperature for debonding, the effective barrier height extracted from the measured data, and the maximum voltage of the HBVs for a current density of 100 A/cm2 were extracted to be 260 ˚C, 0.56 eV, and 10.5 V, respectively.
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- Tavakoli Dastjerdi, Mohammad Hadi, 1984, et al.
(författare)
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Transfer of InP-based HBV epitaxy onto borosilicate glass substrate by anodic bonding
- 2010
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Ingår i: Electronics Letters. - : Institution of Engineering and Technology (IET). - 1350-911X .- 0013-5194. ; 46:14, s. 1013-1014
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Tidskriftsartikel (refereegranskat)abstract
- We present a new fabrication process for epitaxial transfer of InP-based heterostructure barrier varactor diodes, as high frequency varactor multipliers, onto low-dielectric borosilicate glass substrate, employing anodic bonding. The fabricated diodes on the new host substrate display symmetric electrical characteristics with only minor differences compared to those of the reference devices on the original InP substrate.
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