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- Muench, S., et al.
(författare)
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Time-resolved photoluminescence investigations on HfO2-capped InP nanowires
- 2010
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Ingår i: Nanotechnology. - : IOP Publishing. - 0957-4484 .- 1361-6528. ; 21:10
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Tidskriftsartikel (refereegranskat)abstract
- We have employed time-resolved photoluminescence (PL) spectroscopy to study the impact of HfO2 surface capping by atomic layer deposition (ALD) on the optical properties of InP nanowires (NWs). The deposition of high-kappa dielectrics acting as a gate oxide is of particular interest in view of possible applications of semiconductor NWs in future wrap-gated field effect transistors (FETs). A high number of charged states at the NW-dielectrics interface can strongly degrade the performance of the FET which explains the strong interest in high quality deposition of high-kappa dielectrics. In the present work we show that time-resolved spectroscopy is a valuable and direct tool to monitor the surface quality of HfO2-capped InP NWs. In particular, we have studied the impact of ALD process parameters as well as surface treatment prior to the oxide capping on the NW-dielectrics interface quality. The best results in terms of the surface recombination velocity (S-0 = 9.5 x 10(3) cm s(-1)) were obtained for InP/GaP core/shell NWs in combination with a low temperature (100 degrees C) ALD process. While the present report focuses on the InP material system, our method of addressing the surface treatment for semiconductors with high-kappa dielectrics will also be applicable to nanoelectronic devices based on other III/V material systems such as InAs.
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- Webb, J. L., et al.
(författare)
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Imaging Atomic Scale Dynamics on III-V Nanowire Surfaces during Electrical Operation
- 2017
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Ingår i: Scientific Reports. - : Springer Science and Business Media LLC. - 2045-2322. ; 7:1
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Tidskriftsartikel (refereegranskat)abstract
- As semiconductor electronics keep shrinking, functionality depends on individual atomic scale surface and interface features that may change as voltages are applied. In this work we demonstrate a novel device platform that allows scanning tunneling microscopy (STM) imaging with atomic scale resolution across a device simultaneously with full electrical operation. The platform presents a significant step forward as it allows STM to be performed everywhere on the device surface and high temperature processing in reactive gases of the complete device. We demonstrate the new method through proof of principle measurements on both InAs and GaAs nanowire devices with variable biases up to 4 V. On InAs nanowires we observe a surprising removal of atomic defects and smoothing of the surface morphology under applied bias, in contrast to the expected increase in defects and electromigration-related failure. As we use only standard fabrication and scanning instrumentation our concept is widely applicable and opens up the possibility of fundamental investigations of device surface reliability as well as new electronic functionality based on restructuring during operation.
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- Andréasson, Sven, et al.
(författare)
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Psychosocial Treatment for Alcohol Dependence
- 2003
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Ingår i: Treating Alcohol and Drug Abuse : An Evidence Based Review - An Evidence Based Review. - : Wiley. - 352730682X - 9783527306824 - 9783527601462 ; , s. 43-188
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Bokkapitel (refereegranskat)
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- Barker, D., et al.
(författare)
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Individually addressable double quantum dots formed with nanowire polytypes and identified by epitaxial markers
- 2019
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 114:18
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Tidskriftsartikel (refereegranskat)abstract
- Double quantum dots (DQDs) hold great promise as building blocks for quantum technology as they allow for two electronic states to coherently couple. Defining QDs with materials rather than using electrostatic gating allows for QDs with a hard-wall confinement potential and more robust charge and spin states. An unresolved problem is how to individually address these QDs, which is necessary for controlling quantum states. We here report the fabrication of DQD devices defined by the conduction band edge offset at the interface of the wurtzite and zinc blende crystal phases of InAs in nanowires. By using sacrificial epitaxial GaSb markers selectively forming on one crystal phase, we are able to precisely align gate electrodes allowing us to probe and control each QD independently. We hence observe textbooklike charge stability diagrams, a discrete energy spectrum, and electron numbers consistent with theoretical estimates and investigate the tunability of the devices, finding that changing the electron number can be used to tune the tunnel barrier as expected by simple band diagram arguments.
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- Berglund, Mats, et al.
(författare)
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Pharmacotherapy for alcohol dependence
- 2003
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Ingår i: Treatment of Alcohol and Drug Abuse. An Evidence-Based Review. - 9783527306824 - 352730682X ; , s. 4-4
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Bokkapitel (övrigt vetenskapligt/konstnärligt)
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