| 1. |
- Elahipanah, Hossein, et al.
(författare)
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Design optimization of a high temperature 1.2 kV 4H-SiC buried grid JBS rectifier
- 2017
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Ingår i: 11th European Conference on Silicon Carbide and Related Materials, ECSCRM 2016. - : Trans Tech Publications Inc.. - 9783035710434 ; , s. 455-458
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Konferensbidrag (refereegranskat)abstract
- 1.2 kV SiC buried grid junction barrier Schottky (BG-JBS) diodes are demonstrated. The design considerations for high temperature applications are investigated. The design is optimized in terms of doping concentration and thickness of the epilayers, as well as grid size and spacing dimensions, in order to obtain low on-resistance and reasonable leakage current even at high temperatures. The device behavior at temperatures ranging from 25 to 250ºC is analyzed and measured on wafer level. The forward voltage drop of 1.1 V at 100 A/cm2 and 3.8 V at 1000 A/cm2 is measured, respectively. At reverse voltage of 1 kV, a leakage current density below 0.1 μA/cm2 and below 0.1 mA/cm2 is measured at 25 and 250ºC, respectively. This proves the effective shielding effect of the BG-JBS design and provides benefits in high voltage applications, particularly for high temperature operation.
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| 2. |
- Thierry-Jebali, N., et al.
(författare)
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Applications of vapor-liquid-solid selective epitaxy of highly p-type doped 4H-SiC: PiN diodes with peripheral protection and improvement of specific contact resistance of ohmic contacts
- 2014
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Ingår i: SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2. - : Trans Tech Publications. - 9783038350101 ; , s. 639-644
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Konferensbidrag (refereegranskat)abstract
- This work deals with two applications of the Selective Epitaxial Growth of highly p-type doped buried 4H-SiC in Vapor-Liquid-Solid configuration (SEG-VLS). The first application is the improvement of the Specific Contact Resistance (SCR) of contacts made on such p-type material. As a result of the extremely high doping level, SCR values as low as 1.3x10-6 Ω.cm2 have been demonstrated. Additionally, the high Al concentration of the SEG-VLS 4H-SiC material induces a lowering of the Al acceptor ionization energy down to 40 meV. The second application is the fabrication of PiN diodes with SEG-VLS emitter and guard-rings peripheral protection. Influence of some process parameters and crystal orientation on the forward and reverse characteristics of the PiN diodes is discussed. © (2014) Trans Tech Publications, Switzerland.
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| 3. |
- Thierry-Jebali, N, et al.
(författare)
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Observation of the generation of stacking faults and active degradation measurements on off-axis and on-axis 4H-SiC PiN diodes
- 2012
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Ingår i: Applied Physics Letters. - : American Institute of Physics (AIP). - 0003-6951 .- 1077-3118. ; 101:22, s. 222111-
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Tidskriftsartikel (refereegranskat)abstract
- PiN diodes have been fabricated on nominally on-axis Si-face 4H-SiC material and their electrical characteristics are compared to PiN diodes processed with exactly the same device process recipe on 8 degrees-off 4H-SiC material. Some diodes had an optical window on the top metal contact to observe the possible stacking faults generation and motion with photo emission microscopy. The diodes were electrically characterized in forward voltage to test their stability. Electrical characterizations demonstrate that there is no noticeable degradation for the diodes processed on on-axis 4H-SiC substrate and with optical characterization the formation of stacking faults was not observed.
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| 4. |
- Thierry-Jebali, N., et al.
(författare)
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Very low specific contact resistance measurements made on a highly p-type doped 4H-SiC layer selectively grown by vapor-liquid-solid transport
- 2013
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Ingår i: Applied Physics Letters. - : American Institute of Physics (AIP). - 0003-6951 .- 1077-3118. ; 102:21, s. 212108-
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Tidskriftsartikel (refereegranskat)abstract
- This work reports on the performances of ohmic contacts fabricated on highly p-type doped 4H-SiC epitaxial layer selectively grown by vapor-liquid-solid transport. Due to the very high doping level obtained, the contacts have an ohmic behavior even without any annealing process. Upon variation of annealing temperatures, it was shown that both 500 and 800 °C annealing temperature lead to a minimum value of the Specific Contact Resistance (SCR) down to 1.3×10−6 Ω⋅cm2. However, a large variation of the minimum SCR values has been observed (up to 4×10−4 Ω⋅cm2). Possible sources of this fluctuation have been also discussed in this paper.
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