| 1. |
- Abelev, Betty, et al.
(författare)
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Measurement of prompt J/psi and beauty hadron production cross sections at mid-rapidity in pp collisions at root s=7 TeV
- 2012
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Ingår i: Journal of High Energy Physics. - 1029-8479. ; :11
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Tidskriftsartikel (refereegranskat)abstract
- The ALICE experiment at the LHC has studied J/psi production at mid-rapidity in pp collisions at root s = 7 TeV through its electron pair decay on a data sample corresponding to an integrated luminosity L-int = 5.6 nb(-1). The fraction of J/psi from the decay of long-lived beauty hadrons was determined for J/psi candidates with transverse momentum p(t) > 1,3 GeV/c and rapidity vertical bar y vertical bar < 0.9. The cross section for prompt J/psi mesons, i.e. directly produced J/psi and prompt decays of heavier charmonium states such as the psi(2S) and chi(c) resonances, is sigma(prompt J/psi) (p(t) > 1.3 GeV/c, vertical bar y vertical bar < 0.9) = 8.3 +/- 0.8(stat.) +/- 1.1 (syst.)(-1.4)(+1.5) (syst. pol.) mu b. The cross section for the production of b-hadrons decaying to J/psi with p(t) > 1.3 GeV/c and vertical bar y vertical bar < 0.9 is a sigma(J/psi <- hB) (p(t) > 1.3 GeV/c, vertical bar y vertical bar < 0.9) = 1.46 +/- 0.38 (stat.)(-0.32)(+0.26) (syst.) mu b. The results are compared to QCD model predictions. The shape of the p(t) and y distributions of b-quarks predicted by perturbative QCD model calculations are used to extrapolate the measured cross section to derive the b (b) over bar pair total cross section and d sigma/dy at mid-rapidity.
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| 2. |
- Abelev, Betty, et al.
(författare)
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Underlying Event measurements in pp collisions at root s=0.9 and 7 TeV with the ALICE experiment at the LHC
- 2012
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Ingår i: Journal of High Energy Physics. - 1029-8479. ; :7
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Tidskriftsartikel (refereegranskat)abstract
- We present measurements of Underlying Event observables in pp collisions at root s = 0 : 9 and 7 TeV. The analysis is performed as a function of the highest charged-particle transverse momentum p(T),L-T in the event. Different regions are defined with respect to the azimuthal direction of the leading (highest transverse momentum) track: Toward, Transverse and Away. The Toward and Away regions collect the fragmentation products of the hardest partonic interaction. The Transverse region is expected to be most sensitive to the Underlying Event activity. The study is performed with charged particles above three different p(T) thresholds: 0.15, 0.5 and 1.0 GeV/c. In the Transverse region we observe an increase in the multiplicity of a factor 2-3 between the lower and higher collision energies, depending on the track p(T) threshold considered. Data are compared to PYTHIA 6.4, PYTHIA 8.1 and PHOJET. On average, all models considered underestimate the multiplicity and summed p(T) in the Transverse region by about 10-30%.
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| 3. |
- Athle, Robin, et al.
(författare)
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Effects of TiN Top Electrode Texturing on Ferroelectricity in Hf1-xZrxO2
- 2021
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Ingår i: ACS applied materials & interfaces. - : American Chemical Society (ACS). - 1944-8244 .- 1944-8252. ; 13:9, s. 11089-11095
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Tidskriftsartikel (refereegranskat)abstract
- Ferroelectric memories based on hafnium oxide are an attractive alternative to conventional memory technologies due to their scalability and energy efficiency. However, there are still many open questions regarding the optimal material stack and processing conditions for reliable device performance. Here, we report on the impact of the sputtering process conditions of the commonly used TiN top electrode on the ferroelectric properties of Hf1-xZrxO2. By manipulating the deposition pressure and chemistry, we control the preferential orientation of the TiN grains between (111) and (002). We observe that (111) textured TiN is superior to (002) texturing for achieving high remanent polarization (Pr). Furthermore, we find that additional nitrogen supply during TiN deposition leads to >5× greater endurance, possibly by limiting the scavenging of oxygen from the Hf1-xZrxO2 film. These results help explain the large Pr variation reported in the literature for Hf1-xZrxO2/TiN and highlights the necessity of tuning the top electrode of the ferroelectric stack for successful device implementation.
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| 4. |
- Athle, Robin, et al.
(författare)
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Improved Endurance of Ferroelectric HfxZr1–xO2 Integrated on InAs Using Millisecond Annealing
- 2022
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Ingår i: Advanced Materials Interfaces. - : Wiley. - 2196-7350. ; 9:27
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Tidskriftsartikel (refereegranskat)abstract
- Ferroelectric HfxZr1–xO2 (HZO) is typically achieved by crystallization of an amorphous thin film via rapid thermal processing (RTP) at time scales of seconds to minutes. For integration on III–V semiconductors, this approach can severely degrade the sensitive HZO/III–V interface. To evaluate whether a reduced thermal budget can improve the interface quality, millisecond duration thermal anneals are utilized using a flash lamp annealer (FLA) on HZO/InAs capacitors. Through thorough electrical characterization such as polarization hysteresis, endurance, and capacitance-voltage measurements, as well as synchrotron-based chemical interface characterization, the FLA and RTP treatments are compared and the FLA results are found in lower interface defect density and higher endurance, but also have generally lower remanent polarization (Pr) compared to RTP. Additionally, ways to achieve high Pr and low interface defect density using multiple lower energy flashes, as well as by pre-crystallization during the ALD growth step are investigated. Using FLA, Pr exceeding 20 µC cm−2 is achieved, with extended endurance properties compared to RTP treatment and a considerably decreased defect density, indicative of a higher quality HZO/InAs interface. This work presents valuable insight into the successful integration of ferroelectric HZO on low thermal budget III–V semiconductors.
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| 5. |
- Bahrami, Danial, et al.
(författare)
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Impact of Electrical Current on Single GaAs Nanowire Structure
- 2021
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Ingår i: Physica Status Solidi (B) Basic Research. - : Wiley. - 0370-1972. ; 258:8
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Tidskriftsartikel (refereegranskat)abstract
- The impact of electrical current on the structure of single free-standing Be-doped GaAs nanowires grown on a Si 111 substrate is investigated. Single nanowires have been structurally analyzed by X-ray nanodiffraction using synchrotron radiation before and after the application of an electrical current. The conductivity measurements on single nanowires in their as-grown geometry have been realized via W-probes installed inside a dual-beam focused ion beam/scanning electron microscopy chamber. Comparing reciprocal space maps of the 111 Bragg reflection, extracted perpendicular to the nanowire growth axis before and after the conductivity measurement, the structural impact of the electrical current is evidenced, including deformation of the hexagonal nanowire cross section, tilting, and bending with respect to the substrate normal. For electrical current densities below 30 A mm−2, the induced changes in the reciprocal space maps are negligible. However, for a current density of 347 A mm−2, the diffraction pattern is completely distorted. The mean cross section of the illuminated nanowire volume is reconstructed from the reciprocal space maps before and after the application of electrical current. Interestingly, the elongation of two pairs of opposing side facets accompanied by shrinkage of the third pair of facets is found. The variations in the nanowire diameter, as well as their tilt and bending, are confirmed by scanning electron microscopy. To explain these findings, material melting due to Joule heating during voltage/current application accompanied by anisotropic deformations induced by the W-probe is suggested.
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| 6. |
- Benter, Sandra, et al.
(författare)
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Tuneable 2D surface Bismuth incorporation on InAs nanosheets
- 2023
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Ingår i: Nanoscale. - : Royal Society of Chemistry. - 2040-3364 .- 2040-3372. ; 15:21, s. 9551-9559
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Tidskriftsartikel (refereegranskat)abstract
- The chemical bonding at the interface between compound semiconductors and metals is central in determining electronic and optical properties. In this study, new opportunities for controlling this are presented for nanostructures. We investigate Bi adsorption on 2D wurtzite InAs (1120) nanosheets and find that temperature-controlled Bi incorporation in either anionic- or cationic-like bonding is possible in the easily accesible range between room temperature and 400 degrees C. This separation could not be achieved for ordinary zinc blende InAs(110) surfaces. As the crystal structures of the two surfaces have identical nearest neighbour configurations, this indicates that overall geometric differences can significantly alter the adsorption and incorporation. Ab initio theoretical modelling confirms observed adsorption results, but indicate that both the formation energies as well as kinetic barriers contributes to the observed temperature dependent behaviour. Further, we find that the Bi adsorption rate can differ by at least 2.5 times between the two InAs surfaces while being negligible for standard Si substrates under similar deposition conditions. This, in combination with the observed interface control, provides an excellent opportunity for tuneable Bi integration on 2D InAs nanostructures on standard Si substrates.
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| 7. |
- Bi, Zhaoxia, et al.
(författare)
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InGaN Platelets : Synthesis and Applications toward Green and Red Light-Emitting Diodes
- 2019
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Ingår i: Nano Letters. - : American Chemical Society. - 1530-6984 .- 1530-6992. ; 19:5, s. 2832-2839
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Tidskriftsartikel (refereegranskat)abstract
- In this work, we present a method to synthesize arrays of hexagonal InGaN submicrometer platelets with a top c-plane area having an extension of a few hundred nanometers by selective area metal-organic vapor-phase epitaxy. The InGaN platelets were made by in situ annealing of InGaN pyramids, whereby InGaN from the pyramid apex was thermally etched away, leaving a c-plane surface, while the inclined {101Ì1} planes of the pyramids were intact. The as-formed c-planes, which are rough with islands of a few tens of nanometers, can be flattened with InGaN regrowth, showing single bilayer steps and high-quality optical properties (full width at half-maximum of photoluminescence at room temperature: 107 meV for In 0.09 Ga 0.91 N and 151 meV for In 0.18 Ga 0.82 N). Such platelets offer surfaces having relaxed lattice constants, thus enabling shifting the quantum well emission from blue (as when grown on GaN) to green and red. For single InGaN quantum wells grown on the c-plane of such InGaN platelets, a sharp interface between the quantum well and the barriers was observed. The emission energy from the quantum well, grown under the same conditions, was shifted from 2.17 eV on In 0.09 Ga 0.91 N platelets to 1.95 eV on In 0.18 Ga 0.82 N platelets as a result of a thicker quantum well and a reduced indium pulling effect on In 0.18 Ga 0.82 N platelets. On the basis of this method, prototype light-emitting diodes were demonstrated with green emission on In 0.09 Ga 0.91 N platelets and red emission on In 0.18 Ga 0.82 N platelets.
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| 8. |
- Bi, Zhaoxia, et al.
(författare)
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Realization of Ultrahigh Quality InGaN Platelets to be Used as Relaxed Templates for Red Micro-LEDs
- 2020
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Ingår i: ACS Applied Materials and Interfaces. - : NLM (Medline). - 1944-8244 .- 1944-8252. ; 12:15, s. 17845-17851
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Tidskriftsartikel (refereegranskat)abstract
- In this work, arrays of predominantly relaxed InGaN platelets with indium contents of up to 18%, free from dislocations and offering a smooth top c-plane, are presented. The InGaN platelets are grown by metal-organic vapor phase epitaxy on a dome-like InGaN surface formed by chemical mechanical polishing of InGaN pyramids defined by 6 equivalent {101̅1} planes. The dome-like surface is flattened during growth, through the formation of bunched steps, which are terminated when reaching the inclined {101̅1} planes. The continued growth takes place on the flattened top c-plane with single bilayer surface steps initiated at the six corners between the c-plane and the inclined {101̅1} planes, leading to the formation of high-quality InGaN layers. The top c-plane of the as-formed InGaN platelets can be used as a high-quality template for red micro light-emitting diodes.
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| 9. |
- Bi, Zhaoxia, et al.
(författare)
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Self-assembled InN quantum dots on side facets of GaN nanowires
- 2018
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Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 123:16
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Tidskriftsartikel (refereegranskat)abstract
- Self-assembled, atomic diffusion controlled growth of InN quantum dots was realized on the side facets of dislocation-free and c-oriented GaN nanowires having a hexagonal cross-section. The nanowires were synthesized by selective area metal organic vapor phase epitaxy. A 3 Å thick InN wetting layer was observed after growth, on top of which the InN quantum dots formed, indicating self-assembly in the Stranski-Krastanow growth mode. We found that the InN quantum dots can be tuned to nucleate either preferentially at the edges between GaN nanowire side facets, or directly on the side facets by tuning the adatom migration by controlling the precursor supersaturation and growth temperature. Structural characterization by transmission electron microscopy and reciprocal space mapping show that the InN quantum dots are close to be fully relaxed (residual strain below 1%) and that the c-planes of the InN quantum dots are tilted with respect to the GaN core. The strain relaxes mainly by the formation of misfit dislocations, observed with a periodicity of 3.2 nm at the InN and GaN hetero-interface. The misfit dislocations introduce I1 type stacking faults (...ABABCBC...) in the InN quantum dots. Photoluminescence investigations of the InN quantum dots show that the emissions shift to higher energy with reduced quantum dot size, which we attribute to increased quantum confinement.
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| 10. |
- Colvin, Jovana, et al.
(författare)
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Local defect-enhanced anodic oxidation of reformed GaN nanowires
- 2020
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Ingår i: Physical Review Materials. - 2475-9953. ; 4:7
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Tidskriftsartikel (refereegranskat)abstract
- Understanding formation and distribution of defects in GaN substrates and device layers is needed to improve device performance in rf and power electronics. Here we utilize conductive atomic force microscopy (c-AFM) for studying defect-related leakage paths in an unintentionally doped GaN film formed by nanowire reformation. A nanoscopic Schottky contact is formed between the c-AFM probe and the GaN surface, which, under reverse-bias conditions, reveals local leakage currents at the positions of the nanowires. Cathodoluminescence shows these areas to be dominated by yellow-band luminescence, in contrast to the surrounding GaN matrix, which mainly shows near-band-gap luminescence. These results are attributed to a high density of native and residual defects, confined to the nanowires. In addition, we use anodic oxidation to map defect-related conductive paths through locally induced growth of gallium oxide. The oxide yield, which is known to depend on the local electric field strength between the AFM tip and the sample, correlates well with the level of reverse-bias leakage current. Local irregularities in oxide height reveal extended oxidation attributed to defect-related deep-level states. Thisis confirmed by controlled dissolution of the oxide in NaOH, showing that a deeper oxide film is grown over areas where defect-related conductive paths are formed. Finally, we demonstrate how this approach can be used as a quick and easy diagnostic tool for evaluating the influence of specific growth conditions and process steps on defect-induced leakage current levels and defect distribution in GaN structures, demonstrating its potential for accelerated test of leakage degradation at critical positions in GaN-based devices.
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