| 1. |
- Metaferia, Wondwosen, et al.
(författare)
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Selective area heteroepitaxy of InP nanopyramidal frusta on Si for nanophotonics
- 2013
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Ingår i: Indium Phosphide and Related Materials (IPRM), 2012 International Conference on. - : IEEE. - 9781467317252 ; , s. 81-84
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Konferensbidrag (refereegranskat)abstract
- InP nanopyramidal frusta on InP and InP precoated Si substrates were grown selectively from nano-imprinted circular openings in silicon dioxide mask using a low pressure hydride vapor phase epitaxy reactor. The grown InP nanopyramidal frusta, octagonal in shape, were characterized by Atomic Force Microscopy, Scanning Electron Microscopy and Photoluminescence. The growth is extremely selective and uniform over the entire patterned area on both substrates. The measured diagonal of the top surface is 30 nm and 90 nm for the nanopyramidal frusta grown from 120 nm and 300 nm diameter openings, respectively. The size and morphology as well as the optical quality of these pyramidal frusta make them suitable templates for quantum dot structures for nano photonics and silicon photonics.
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| 2. |
- Metaferia, Wondwosen, et al.
(författare)
-
Selective area heteroepitaxy through nanoimprint lithography for large area InP on Si
- 2012
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Ingår i: Physica Status Solidi. C, Current topics in solid state physics. - : Wiley. - 1610-1634 .- 1610-1642. ; 9:7, s. 1610-1613
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Tidskriftsartikel (refereegranskat)abstract
- The use of nanoimprint lithography, a low cost and time saving alternative to E-beam lithography, for growing heteroepitaxial indium phosphide layer on silicon is demonstrated. Two types of patterns on 500 nm and 200 nm thick silicon dioxide mask either on InP substrate or InP seed layer on silicon were generated by UV nanoimprint lithography: (i) circular openings of diameter 150 nm and 200 nm and (ii) line openings of width ranging from 200 nm to 500 nm. Selective area growth and epitaxial lateral overgrowth of InP were conducted on these patterns in a low pressure hydride vapour phase epitaxy reactor. The epitaxial layers obtained were characterized by atomic force microscopy, scanning electron microscopy and micro photoluminescence. The growth from the circular openings on InP substrate and InP (seed) on Si substrate is extremely selective with similar growth morphology. The final shape has an octahedral flat top pyramid type geometry. These can be used as templates for growing InP nanostructures on silicon. The grown InP layers from the line openings on InP substrates are ∌ 2.5 Όm thick with root mean square surface roughness as low as 2 nm. Completely coalesced layer of InP over an area of 1.5 mm x 1.5 mm was obtained.The room temperature photoluminescence intensity from InP layers on InP substrate is 55% of that of homoepitaxial InP layer. The decrease in PL intensity with respect to that of the homoepitaxial layer is probably due to defects associated with stacking faults caused by surface roughness of the mask surface. Thus in this study, we have demonstrated that growth of heteroepitaxial InP both homogeneously and selectively on the large area of silicon can be achieved. This opens up the feasibility of growing InP on large area silicon for several photonic applications.
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