| 1. |
- Ivanov, S.V., et al.
(författare)
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MBE growth and properties of bulk BeCdSe alloys and digital (BeSe : CdSe)/ZnSe quantum wells
- 2000
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Ingår i: Journal of Crystal Growth. - 0022-0248 .- 1873-5002. ; 214, s. 109-114
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Tidskriftsartikel (refereegranskat)abstract
- We report for the first time on MBE growth, structural and optical properties of single layers, quantum well structures and short-period superlattices based on BexCd1-xSe ternary alloys on GaAs. Both the conventional MBE growth mode and the sub-monolayer digital alloying technique (SDA) have been employed for the fabrication of the structures. Compositional boundaries of an instability region 0.03 < x < 0.38, calculated in a regular solution approximation for the completely coherent system, agree well with available experimental data. A suppression of the phase separation in BeCdSe by elastic stress in the layer, accompanied by a strong reduction of the Cd incorporation coefficient has been found. Ultrathin 2.8 ML BeCdSe SDA QWs with x approx. 0.15 demonstrate about an order of magnitude increase in the PL intensity with respect to the pure CdSe one, probably resulting from an enhanced carrier localization efficiency. Eg as a function of the Be content reveals a strong bowing in optical data, which allows one to consider BeCdSe alloys with compositions nearly lattice-matched to GaAs as potential materials for the active region of blue-green lasers.
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| 2. |
- Jmerik, V.N., et al.
(författare)
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Optically pumped lasing at 300.4 nm in AlGaN MQW structures grown by plasma-assisted molecular beam epitaxy on c-Al2O3
- 2010
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Ingår i: PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE. - : WILEY-V C H VERLAG GMBH. - 1862-6300. ; 207:6, s. 1313-1317
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Tidskriftsartikel (refereegranskat)abstract
- We have demonstrated optically pumped room-temperature pulse lasing at 300.4 nm from an AlGaN-based multiple-quantum-well (MQW) structure grown by plasma-assisted molecular beam epitaxy on a c-sapphire substrate. The lasing was achieved at the threshold peak power of similar to 12 MW/cm(2). The MQW structure involved AlGaN/AlN short-period super-lattices to decrease the threading dislocation densities from 10(11) down to 10(9)-10(10) cm(-2). Studies of time-resolved photoluminescence (TRPL) spectra and cw PL temperature dependences (10-300K) of different MQW structures, as well as numerical calculations of the optical gain and confinement in the laser structure allowed us to conclude about the optimum design of AlGaN-based MQW structures for the lower threshold UV lasing.
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| 3. |
- Mikhailov, T. N., et al.
(författare)
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Forster Energy Transfer in Arrays of Epitaxial CdSe/ZnSe Quantum Dots Involving Bright and Dark Excitons
- 2018
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Ingår i: Physics of the solid state. - : PLEIADES PUBLISHING INC. - 1063-7834 .- 1090-6460. ; 60:8, s. 1590-1594
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Tidskriftsartikel (refereegranskat)abstract
- Using time-resolved photoluminescence (PL) spectroscopy, we establish the presence of the Forster energy transfer mechanism between two arrays of epitaxial CdSe/ZnSe quantum dots (QDs) of different sizes. The mechanism operates through dipole-dipole interaction between ground excitonic states of the smaller QDs and excited states of the larger QDs. The dependence of energy transfer efficiency on the width of barrier separating the QD insets is shown to be in line with the Forster mechanism. The temperature dependence of the PL decay times and PL intensity suggests the involvement of dark excitons in the energy transfer process.
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| 4. |
- Toropov, A.A., et al.
(författare)
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Coexistence of type-I and type-II band lineups in Cd(Te,Se)/ZnSe quantum-dot structures
- 2006
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 89:12
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Tidskriftsartikel (refereegranskat)abstract
- The authors report on transmission electron microscopy, cathodoluminescence, and time resolved photoluminescence studies of thin Cd(Te,Se) layers in a ZnSe matrix, grown by molecular beam epitaxy. All observations confirm strain-induced self-assembly of quantum dots (QD's), induced primarily by the 14% lattice mismatch between CdTe and ZnSe. The emission spectrum of the structure is the superposition of a relatively narrow luminescence line originating from CdSe-enriched type-I QD's and a broad band attributed to the emission of an ultrathin ZnTeSe/ZnSe layer with type-II band lineup, formed in between the QD's. © 2006 American Institute of Physics.
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| 5. |
- Toropov, A. A., et al.
(författare)
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Suppression of the quantum-confined Stark effect in AlxGa1-xN/AlyGa1-yN corrugated quantum wells
- 2013
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Ingår i: Journal of Applied Physics. - : American Institute of Physics (AIP). - 0021-8979 .- 1089-7550. ; 114:12
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Tidskriftsartikel (refereegranskat)abstract
- We report comparative studies of 6-nm-thick AlxGa1-xN/AlyGa1-yN pyroelectric quantum wells (QWs) grown by plasma-assisted molecular beam epitaxy on c-sapphire substrates with a thick AlN buffer deposited under different growth conditions. The Al-rich growth conditions result in a 2D growth mode and formation of a planar QW, whereas the N-rich conditions lead to a 3D growth mode and formation of a QW corrugated on the size scale of 200-300 nm. Time-resolved photoluminescence (PL) measurements reveal a strong quantum-confined Stark effect in the planar QW, manifested by a long PL lifetime and a red shift of the PL line. In the corrugated QW, the emission line emerges 200 meV higher in energy, the low-temperature PL lifetime is 40 times shorter, and the PL intensity is stronger (similar to 4 times at 4.5K and similar to 60 times at 300 K). The improved emission properties are explained by suppression of the quantum-confined Stark effect due to the reduction of the built-in electric field within the QW planes, which are not normal to the [0001] direction, enhanced carrier localization, and improved efficiency of light extraction.
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| 6. |
- Buyanova, Irina A., et al.
(författare)
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Effect of momentum relaxation on exciton spin dynamics in diluted magnetic semiconductor ZnMnSe CdSe superlattices
- 2005
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Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 71:16
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Tidskriftsartikel (refereegranskat)abstract
- cw hot photoluminescence (PL) complemented by transient PL measurements is employed to evaluate momentum and spin relaxation of heavy hole (HH) excitons in ZnMnSe CdSe superlattices. The rate of acoustic-phonon assisted momentum relaxation is concluded to be comparable to the total rate of exciton decay processes, about (2-3) × 1010 s-1, independent of applied magnetic fields. In magnetic fields when the Zeeman splitting ? of the exciton states is below the energy of the longitudinal optical (LO) phonon (?LO), a surprisingly strong suppression of spin relaxation rate from the bottom of the upper spin band is observed, which becomes comparable to that of momentum scattering via acoustic phonons. On the other hand, dramatic acceleration of the spin relaxation process by more than one order of magnitude is found for the excitons with a high momentum K. The findings are interpreted as being due to electron and hole spin flip processes via exchange interaction with isolated Mn2+ ions. Experimental evidence for the efficient interaction between the hot excitons and Mn impurities is also provided by the observation of spin flip transitions within Mn2+ - Mn2+ pairs that accompany the momentum relaxation of the hot HH excitons. In higher magnetic fields ?= ?LO, abrupt shortening of the spin flip time is observed. It indicates involvement of a new and more efficient spin relaxation process and is attributed to direct LO-assisted exciton spin relaxation with a subpicosecond spin relaxation time. © 2005 The American Physical Society.
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| 7. |
- Buyanova, Irina, 1960-, et al.
(författare)
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Control of spin functionality in ZnMnSe-based structures : Spin switching versus spin alignment
- 2003
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 82:11, s. 1700-
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Tidskriftsartikel (refereegranskat)abstract
- The ability of attaining desired spin functionality by adjusting structural design is demonstrated in diluted magnetic semiconductor (DMS) quantum structures based on II-VI semiconductors. The following spin enabling functions are achieved by tuning the ratio between the rates of exciton spin relaxation within the DMS and exciton escape from it to an adjacent nonmagnetic spin detector. Spin switching is realized when using a thin layer of Zn0.95Mn0.05Se as a spin manipulator and is attributed to a fast exciton escape from the DMS preceding the spin relaxation. Spin alignment is accomplished in tunneling structures where the presence of an energy barrier inserted between a spin manipulator (a DMS-based superlattice) and a spin detector ensures a slow escape rate from the DMS layer.
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| 8. |
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| 9. |
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| 10. |
- Buyanova, Irina, 1960-, et al.
(författare)
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Exciton Spin Manipulation in ZnMnSe-Based Structures
- 2003
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Konferensbidrag (refereegranskat)abstract
- Strong effect of structural design on spin functionality is observed in quantum structures based on II-VI semiconductors. Spin switching is realized when using a thin layer of Zn0.95Mn0.05Se diluted magnetic semiconductor (DMS) as a spin manipulator. This is evident from the polarization of photoluminescence related to a spin detector (an adjacent nonmagnetic quantum well (QW)) measured under the resonant excitation of the spin-up and spin-down states of the DMS, which is identical in value but opposite in sign. The achieved spin switching is suggested to reflect fast carrier diffusion from the DMS due to the absence of an energy barrier between the upper spin state of the DMS layer and the QW. On the other hand, the spin alignment is accomplished in the tunneling structures where the presence of the energy barrier inserted between a spin manipulator (i.e., a ZnMnSe/CdSe DMS superlattice) and a spin detector ensures a slow escape rate from the DMS layer.
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