| 1. |
- Finder, C, et al.
(författare)
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Fluorescence microscopy for quality control in nanoimprint lithography
- 2003
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Ingår i: Microelectronic Engineering (Proceedings of the 28th International Conference on Micro- and Nano-Engineering). - 0167-9317 .- 1873-5568. ; 67-8, s. 623-628
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Konferensbidrag (refereegranskat)abstract
- Fluorescence microscopy is introduced as a low cost quality control process for nanoimprint lithography. To depict imprinted structures down to 1 mum lateral size and to detect residues down to 100 nm lateral size, the standard printable polymer mr-18000 is labelled with less than 0.1 wt.% fluorescent dye. Three different types of stamps are used to determine the dependence of the shape and size of stamp features in a series of imprints. The quality of a stamp is given by the sticking polymer residues per unit area. Fluorescence light images as well as visible light images are analysed. Changes in the area of the stamp covered with polymer as a function of the number of imprints is summarised in a statistical process chart. Adhesion was artificially induced in order to observe self cleaning of virgin stamps. They were detected and monitored, suggesting that this method is a suitable technique for quality control and that it could be easily adapted to the nanoimprint process. (C) 2003 Elsevier Science B.V. All rights reserved.
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| 2. |
- Pfeiffer, K, et al.
(författare)
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Polymer stamps for nanoimprinting
- 2002
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Ingår i: Microelectronic Engineering. - 1873-5568. ; 61-2, s. 393-398
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Tidskriftsartikel (refereegranskat)abstract
- Stamp fabrication for nanoimprinting can be significantly simplified, when specialized crosslinking polymers are applied to pattern definition. The polymer patterns can be used as stamps themselves. Two possibilities are reported: (1) An e-beam sensitive resist was developed, which enables the fabrication of polymer-on-silicon stamps. Patterns with a feature size of 70 nm could be created. (2) Full plastic stamps were obtained by a casting-moulding technique, which enable pattern transfer from any conventional mould. The quality of the two stamp variants were proved by imprinting experiments. (C) 2002 Elsevier Science B.V. All rights reserved.
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| 3. |
- Seekamp, J, et al.
(författare)
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Nanoimprinted passive optical devices
- 2002
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Ingår i: Nanotechnology. - : IOP Publishing. - 0957-4484. ; 13:5, s. 581-586
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Tidskriftsartikel (refereegranskat)abstract
- We report on the feasibility and process parameters of nanoimprint lithography to fabricate low refractive index passive optical devices. Diffraction gratings printed in polymethylmethacrylate (PMMA) exhibit a sharp dispersion with a full width at half maximum of about 20 nm. Waveguides were printed in polystyrene (PS) on silicon oxide and had losses between 8-20 dB cm(-1) at wavelengths between 650-400 nm, respectively. Finally, one-dimensional photonic structures were also printed in PS and their transmission and morphology characterized. The expected Bragg peak was observed in transmission and atomic force microscopy images have shown a good pattern transfer. A square lattice was printed in PMMA and more than 40 print cycles were obtained, i.e., potentially more than 1000 imprints from one master stamp.
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| 4. |
- Zankovych, S, et al.
(författare)
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Nanoimprint-induced effects on electrical and optical properties of quantum well structures
- 2003
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Ingår i: Microelectronic Engineering (Proceedings of the 28th International Conference on Micro- and Nano-Engineering). - 0167-9317 .- 1873-5568. ; 67-8, s. 214-220
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Konferensbidrag (refereegranskat)abstract
- A study of optical and transport properties of semiconductor quantum well structures subjected to nanoimprint lithography (NIL), with its pressure and temperature cycles, has been undertaken to ascertain if this lithography technique induces detrimental changes in these properties of the active layers over a range of pressures and temperatures, typically used in this printing process. Ga0.47In0.53As-InP and GaAs-Al0.3Ga0.7As multiple quantum well samples were investigated. Luminescence and the photoluminescence excitation were recorded before and after printing. No impact upon the luminescence energy and intensity were detected. From the photoluminescence spectrum no evidence of induced strain was found. The magneto transport experiments yielded no evidence of deterioration of neither the mobility nor carrier concentration of a two-dimensional electron gas in a modulation-doped Ga0.25In0.75As/InP heterostructure. Results on samples subjected to the NIL process over a wide range of applied pressure and temperature are presented and discussed. (C) 2003 Elsevier Science B.V. All rights reserved.
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