| 1. |
- Wirtitsch, D., et al.
(författare)
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Exploiting ionization dynamics in the nitrogen vacancy center for rapid, high-contrast spin, and charge state initialization
- 2023
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Ingår i: Physical Review Research. - : AMER PHYSICAL SOC. - 2643-1564. ; 5:1
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Tidskriftsartikel (refereegranskat)abstract
- We propose and experimentally demonstrate a method to strongly increase the sensitivity of spin measure-ments on nitrogen vacancy (NV) centers in diamond, which can be readily implemented in existing quantum sensing experiments. While charge state transitions of this defect are generally considered a parasitic effect to be avoided, we show here that these can be used to significantly increase the NV centers spin contrast, a key quantity for high-sensitivity magnetometry and high-fidelity state readout. The protocol consists of a two-step procedure, in which the charge state of the defect is first purified by a strong laser pulse, followed by weak illumination to obtain high spin polarization. We observe a relative improvement of the readout contrast by 17% and infer a reduction of the initialization error of more than 50%. The contrast enhancement is accompanied by a beneficial increase of the readout signal. For long sequence durations, typically encountered in high-resolution magnetometry, a measurement speedup by a factor of >1.5 is extracted, and we find that the technique is beneficial for sequences of any duration. Additionally, our findings give detailed insight into the charge and spin polarization dynamics of the NV center and provide actionable insights for direct optical, spin-to-charge, and electrical readout of solid-state spin centers.
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| 2. |
- Hofer, J., et al.
(författare)
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High- Q Magnetic Levitation and Control of Superconducting Microspheres at Millikelvin Temperatures
- 2023
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Ingår i: Physical Review Letters. - 1079-7114 .- 0031-9007. ; 131:4
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Tidskriftsartikel (refereegranskat)abstract
- We report the levitation of a superconducting lead-tin sphere with 100 μm diameter (corresponding to a mass of 5.6 μg) in a static magnetic trap formed by two coils in an anti-Helmholtz configuration, with adjustable resonance frequencies up to 240 Hz. The center-of-mass motion of the sphere is monitored magnetically using a dc superconducting quantum interference device as well as optically and exhibits quality factors of up to 2.6×107. We also demonstrate 3D magnetic feedback control of the motion of the sphere. The setup is housed in a dilution refrigerator operating at 15 mK. By implementing a cryogenic vibration isolation system, we can attenuate environmental vibrations at 200 Hz by approximately 7 orders of magnitude. The combination of low temperature, large mass, and high quality factor provides a promising platform for testing quantum physics in previously unexplored regimes with high mass and long coherence times.
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| 3. |
- Astner, Thomas, et al.
(författare)
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Vanadium in silicon carbide: telecom-ready spin centres with long relaxation lifetimes and hyperfine-resolved optical transitions
- 2024
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Ingår i: QUANTUM SCIENCE AND TECHNOLOGY. - : IOP Publishing Ltd. - 2058-9565. ; 9:3
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Tidskriftsartikel (refereegranskat)abstract
- Vanadium in silicon carbide (SiC) is emerging as an important candidate system for quantum technology due to its optical transitions in the telecom wavelength range. However, several key characteristics of this defect family including their spin relaxation lifetime (T1), charge state dynamics, and level structure are not fully understood. In this work, we determine the T1 of an ensemble of vanadium defects, demonstrating that it can be greatly enhanced at low temperature. We observe a large spin contrast exceeding 90% and long spin-relaxation times of up to 25 s at 100 mK, and of order 1 s at 1.3 K. These measurements are complemented by a characterization of the ensemble charge state dynamics. The stable electron spin furthermore enables high-resolution characterization of the systems' hyperfine level structure via two-photon magneto-spectroscopy. The acquired insights point towards high-performance spin-photon interfaces based on vanadium in SiC.
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| 4. |
- Spindlberger, L., et al.
(författare)
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Optical Properties of Vanadium in 4H Silicon Carbide for Quantum Technology
- 2019
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Ingår i: Physical Review Applied. - : AMER PHYSICAL SOC. - 2331-7019. ; 12:1
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Tidskriftsartikel (refereegranskat)abstract
- We study the optical properties of tetravalent-vanadium impurities in 4H silicon carbide. Light emission from two crystalline sites is observed at wavelengths of 1.28 and 1.33 mu m, with optical lifetimes of 163 and 43 ns, respectively, which remains stable up to 50 and 20 K, respectively. Moreover, spectrally broad photoluminescence is observed up to room temperature. Group-theory and ab initio density-functional supercell calculations enable unequivocal site assignment and shed light on the spectral features of the defects. Specifically, our numerical simulations indicate that the site assignment is reversed with respect to previous assumptions. Our calculations show that vanadium in silicon carbide has highly favorable properties for the generation of single photons in the telecommunication wavelength regime. Combined with the available electronic and nuclear degrees of freedom, vanadium presents all the ingredients required for a highly efficient spin-photon interface.
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