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- Jedrasik, Piotr, 1957, et al.
(författare)
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Proximity effects correction for sub-10nm patterning node
- 2010
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Ingår i: Proceedings of SPIE - The International Society for Optical Engineering. - : SPIE. - 0277-786X .- 1996-756X. - 9780819480521 ; 7638
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Konferensbidrag (refereegranskat)abstract
- In this communication, we report on our experimental results from the research focused on the application of the electron beam direct writing in the nanometer range. Special care is taken to analyze the forward scattering spread and its influence on the pattering fidelity for patterns with the dimensions in the sub-10nm region. We model, simulate and discuss several different cases of the strategy used in the pattern writing. The sub-pixel address grid is used and the energy beam distribution is analyzed with 1 angstrom resolution. The pre-compensated energy distribution is analyzed from its slope cross-sectional point of view. Additionally, the field factor correction (FFC) dose compensation, the correctness of the built-in FFC compensation for the sub-10nm regime, and its influence on the writing speed is discussed. We map the pre-compensated energy distribution used for the pattern exposure to the developed resist profile modeled by the spline approximation of the experimentally acquired resist contrast curve. The newly established development process for the hydrogen silsesquioxane (HSQ) resist has been tested and applied in its optimal way. Successful sub-10nm patterning with the dimension controllability better than 5% of the critical dimension (CD) was achieved. The experimental setup use JBX-9300FS (used @ 100keV) as the exposure tool, and the HSQ (XR-1541) as the resist. The energy intensity distribution (EID) function used for the proximity effects compensation is calculated by CHARIOT simulation engine.
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| 2. |
- Tsunoda, D., et al.
(författare)
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Proximity effect correction for 20nm dimension patterning
- 2009
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Ingår i: Proceedings of SPIE - The International Society for Optical Engineering. - : SPIE. - 0277-786X .- 1996-756X. - 9780819475244 ; 7271
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Konferensbidrag (refereegranskat)abstract
- Electron Beam Direct Writing (EBDW) has been applied to various applications such as prototyping or small amount production of electronic devices. Originally, proximity effect in EBDW is considered as the problem of the background energy difference caused by the pattern density distribution. However, the critical dimensions of target patterns are getting smaller, we cannot ignore influences of the forward scattering. Theoretically, when the critical dimension is close to 3 or 4 times of forward scattering range, influence cannot be ignored. For example, in case ofthat corresponds, fabricating 20 nm dimension patterns by Nano Imprint Lithography (NIL) which is significant candidate of next generation lithography technology. Because it requires original dimension (1:1) mold. Therefore proximity effect correction (PEC) system which considers the forward scattering must be important. We developed simulation-based proximity effect correction system combined with data format conversion, works on Linux PC cluster. And we exposed the patterns which are dose compensated by this system. Firstly, we have speculated parameters about backward scattering parameters by exposing 100 nm line and space patterns. We got following parameters, beta (backward scattering range) = 32 urn, eta (backward scattering coefficient) = 2.5. Secondary, we have exposed Line and Space patterns whose dimensions are from 20 nm to 100 nm. We found that smaller and dense patterns have trend to be over exposed and bigger. Experimental specification is following, EB Direct Writing system is JBX-9300FS (lOOkeV ace. Voltage) by JEOL co.ltd, (Japan) , resist is HSQ (FOx 12) by Dow Coming co. (United States), substrate is Si.
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