| 1. |
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| 2. |
- Ahlers, F.J., et al.
(författare)
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The EMRP project GraphOhm- Towards quantum resistance metrology based on graphene
- 2014
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Ingår i: CPEM Digest (Conference on Precision Electromagnetic Measurements). - 0589-1485. - 9781479952052 ; , s. 548-549, s. 548-549
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Konferensbidrag (refereegranskat)abstract
- A new joint research project (JRP) integrating metrology institutes and universities from nine countries is aimed at realization of a new generation of standards for quantum resistance metrology. The project exploits graphene's properties to simplify operation of standards without compromising the unprecedented precision delivered by semiconductor quantum Hall devices. Higher operating temperatures (above 4.2 K, and up to 8 K) and together with lower magnetic fields (below 5 T, and potentially down to 2 T) will lead to a significantly improved and cost-saving dissemination of intrinsically referenced resistance standards to all end-users relying on electrical measurements.
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| 3. |
- Alexander-Webber, J. A., et al.
(författare)
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Giant quantum Hall plateaus generated by charge transfer in epitaxial graphene
- 2016
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Ingår i: Scientific Reports. - : Springer Science and Business Media LLC. - 2045-2322 .- 2045-2322. ; 6
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Tidskriftsartikel (refereegranskat)abstract
- Epitaxial graphene has proven itself to be the best candidate for quantum electrical resistance standards due to its wide quantum Hall plateaus with exceptionally high breakdown currents. However one key underlying mechanism, a magnetic field dependent charge transfer process, is yet to be fully understood. Here we report measurements of the quantum Hall effect in epitaxial graphene showing the widest quantum Hall plateau observed to date extending over 50 T, attributed to an almost linear increase in carrier density with magnetic field. This behaviour is strong evidence for field dependent charge transfer from charge reservoirs with exceptionally high densities of states in close proximity to the graphene. Using a realistic framework of broadened Landau levels we model the densities of donor states and predict the field dependence of charge transfer in excellent agreement with experimental results, thus providing a guide towards engineering epitaxial graphene for applications such as quantum metrology.
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| 4. |
- Burnett, J., et al.
(författare)
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PC2: Identifying noise processes in superconducting resonators
- 2013
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Ingår i: 2013 IEEE 14th InternationalSuperconductive Electronics Conference, ISEC 2013. - 9781467363716 ; , s. Art. no. 6604284-
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Konferensbidrag (refereegranskat)abstract
- Extensive studies of dielectric loss due to two level fluctuators (TLFs) in superconducting resonators have provided routes for low loss resonators. The research is motivated not only by the use of resonators as detectors and in quantum information processing, but more generally due to TLFs being a source of noise and decoherence in all quantum devices. In this work a frequency locked loop was used to measure frequency fluctuations at timescales in excess of 104 seconds, thereby accurately probing the TLF induced low- frequency noise of the resonator. Our measurement method lead to very high statistical confidence even for very long timescales, and here we can therefore present results explicitly identifying power dependent flicker frequency noise (S = 1/fa where a=1) persisting down to the mHz level.
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| 5. |
- Chua, C., et al.
(författare)
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Quantum Hall Effect and Quantum Point Contact in Bilayer-Patched Epitaxial Graphene
- 2014
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Ingår i: Nano Letters. - : American Chemical Society (ACS). - 1530-6992 .- 1530-6984. ; 14:6, s. 3369-3373
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Tidskriftsartikel (refereegranskat)abstract
- We study an epitaxial graphene monolayer with bilayer inclusions via magnetotransport measurements and scanning gate microscopy at low temperatures. We find that bilayer inclusions can be metallic or insulating depending on the initial and gated carrier density. The metallic bilayers act as equipotential shorts for edge currents, while closely spaced insulating bilayers guide the flow of electrons in the monolayer constriction, which was locally gated using a scanning gate probe.
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| 6. |
- de Graaf, Sebastian Erik, 1986, et al.
(författare)
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Direct Identification of Dilute Surface Spins on Al2 O3: Origin of Flux Noise in Quantum Circuits
- 2017
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Ingår i: Physical Review Letters. - 1079-7114 .- 0031-9007. ; 118:5, s. 057703-
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Tidskriftsartikel (refereegranskat)abstract
- An on-chip electron spin resonance technique is applied to reveal the nature and origin of surface spins on Al2O3. We measure a spin density of 2.2×1017 spins/m2, attributed to physisorbed atomic hydrogen and S=1/2 electron spin states on the surface. This is direct evidence for the nature of spins responsible for flux noise in quantum circuits, which has been an issue of interest for several decades. Our findings open up a new approach to the identification and controlled reduction of paramagnetic sources of noise and decoherence in superconducting quantum devices.
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| 7. |
- He, Hans, 1989, et al.
(författare)
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Fabrication of graphene quantum hall resistance standard in a cryogen-Table-Top system
- 2016
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Ingår i: 2016 Conference on Precision Electromagnetic Measurements, CPEM 2016; The Westin OttawaOttawa; Canada; 10-15 July 2016. - : Institute of Electrical and Electronics Engineers Inc.. - 9781467391344 ; , s. Art no 7540516-
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Konferensbidrag (refereegranskat)abstract
- We have demonstrated quantum Hall resistance measurements with metrological accuracy in a relatively easy to use and compact cryogen-free system operating at a temperature of around 3.8 K and magnetic field below 5 T. This advance in technology is due to the unique properties of epitaxial graphene on silicon carbide (SiC) which lifts the stringent requirements for quantum hall effect seen in conventional semiconductors. This paper presents the processes involved in fabrication and characterization of metrologically viable epitaxial graphene samples.
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| 8. |
- Huang, J., et al.
(författare)
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Hot carrier relaxation of Dirac fermions in bilayer epitaxial graphene
- 2015
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Ingår i: Journal of Physics Condensed Matter. - : IOP Publishing. - 0953-8984 .- 1361-648X. ; 27:16
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Tidskriftsartikel (refereegranskat)abstract
- Energy relaxation of hot Dirac fermions in bilayer epitaxial graphene is experimentally investigated by magnetotransport measurements on Shubnikov-de Haas oscillations and weak localization. The hot-electron energy loss rate is found to follow the predicted Bloch-Gruneisen power-law behaviour of T-4 at carrier temperatures from 1.4K up to similar to 100 K, due to electron-acoustic phonon interactions with a deformation potential coupling constant of 22 eV. A carrier density dependence n(e)(-1.5) in the scaling of the T-4 power law is observed in bilayer graphene, in contrast to the n(e)(-0.5) dependence in monolayer graphene, leading to a crossover in the energy loss rate as a function of carrier density between these two systems. The electron-phonon relaxation time in bilayer graphene is also shown to be strongly carrier density dependent, while it remains constant for a wide range of carrier densities in monolayer graphene. Our results and comparisons between the bilayer and monolayer exhibit a more comprehensive picture of hot carrier dynamics in graphene systems.
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| 9. |
- Huang, J., et al.
(författare)
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Physics of a disordered Dirac point in epitaxial graphene from temperature-dependent magnetotransport measurements
- 2015
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Ingår i: Physical Review B - Condensed Matter and Materials Physics. - : American Physical Society. - 2469-9950 .- 2469-9969 .- 1098-0121 .- 1550-235X. ; 92:7
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Tidskriftsartikel (refereegranskat)abstract
- We report a study of disorder effects on epitaxial graphene in the vicinity of the Dirac point by magnetotransport. Hall effect measurements show that the carrier density increases quadratically with temperature, in good agreement with theoretical predictions which take into account intrinsic thermal excitation combined with electron-hole puddles induced by charged impurities. We deduce disorder strengths in the range 10.2-31.2 meV, depending on the sample treatment. We investigate the scattering mechanisms and estimate the impurity density to be 3.0-9.1x10(10) cm(-2) for our samples. A scattering asymmetry for electrons and holes is observed and is consistent with theoretical calculations for graphene on SiC substrates. We also show that the minimum conductivity increases with increasing disorder strength, in good agreement with quantum-mechanical numerical calculations.
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| 10. |
- Ivanov, Zdravko G., 1949, et al.
(författare)
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Depairing critical currents and self-magnetic field effects in submicron YBa2Cu3O7-delta microbridges and bicrystal junctions
- 2004
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Ingår i: Low Temperature Physics. - : AIP Publishing. - 1063-777X .- 1090-6517. ; 30:3, s. 203-207
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Tidskriftsartikel (refereegranskat)abstract
- We report on depairing critical currents in submicron YBa 2 Cu 3 O 7-δ microbridges. A small-angle bicrystal grain boundary junction is used as a tool to study the entrance of vortices induced by a transport current and their influence on the I-V curves. The interplay between the depairing and the vortex motion determines a crossover in the temperature dependence of the critical current. The high entrance field of vortices in very narrow superconducting channels creates the possibility of carrying a critical current close to the depairing limit determined by the S-S ′ -S nature of the small-angle grain boundary junction. © 2004 American Institute of Physics.
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