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Träfflista för sökning "WFRF:(Udvarhelyi Peter) "

Sökning: WFRF:(Udvarhelyi Peter)

  • Resultat 1-7 av 7
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1.
  • Krumrein, Marcel, et al. (författare)
  • Precise Characterization of a Waveguide Fiber Interface in Silicon Carbide
  • 2024
  • Ingår i: ACS Photonics. - : AMER CHEMICAL SOC. - 2330-4022.
  • Tidskriftsartikel (refereegranskat)abstract
    • Spin-active optical emitters in silicon carbide are excellent candidates toward the development of scalable quantum technologies. However, efficient photon collection is challenged by undirected emission patterns from optical dipoles, as well as low total internal reflection angles due to the high refractive index of silicon carbide. Based on recent advances with emitters in silicon carbide waveguides, we now demonstrate a comprehensive study of nanophotonic waveguide-to-fiber interfaces in silicon carbide. We find that across a large range of fabrication parameters, our experimental collection efficiencies remain above 90%. Further, by integrating silicon vacancy color centers into these waveguides, we demonstrate an overall photon count rate of 181 kilo-counts per second, which is an order of magnitude higher compared to standard setups. We also quantify the shift of the ground state spin states due to strain fields, which can be introduced by waveguide fabrication techniques. Finally, we show coherent electron spin manipulation with waveguide-integrated emitters with state-of-the-art coherence times of T-2 similar to 42 mu s. The robustness of our methods is very promising for quantum networks based on multiple orchestrated emitters.
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2.
  • Li, Song, et al. (författare)
  • Carbon defect qubit in two-dimensional WS2
  • 2022
  • Ingår i: Nature Communications. - : Nature Portfolio. - 2041-1723. ; 13:1
  • Tidskriftsartikel (refereegranskat)abstract
    • Identifying and fabricating defect qubits in two-dimensional semiconductors are of great interest in exploring candidates for quantum information and sensing applications. A milestone has been recently achieved by demonstrating that single defect, a carbon atom substituting sulphur atom in single layer tungsten disulphide, can be engineered on demand at atomic size level precision, which holds a promise for a scalable and addressable unit. It is an immediate quest to reveal its potential as a qubit. To this end, we determine its electronic structure and optical properties from first principles. We identify the fingerprint of the neutral charge state of the defect in the scanning tunnelling spectrum. In the neutral defect, the giant spin-orbit coupling mixes the singlet and triplet excited states with resulting in phosphorescence at the telecom band that can be used to read out the spin state, and coherent driving with microwave excitation is also viable. Our results establish a scalable qubit in a two-dimensional material with spin-photon interface at the telecom wavelength region. Recent work has demonstrated controlled fabrication of single carbon defect spins in the two-dimensional material WS2. Here, the authors use ab initio methods to determine the electronic and optical properties of this defect, establishing it as a viable qubit candidate operating close to the telecom band.
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3.
  • Miao, Kevin C., et al. (författare)
  • Electrically driven optical interferometry with spins in silicon carbide
  • 2019
  • Ingår i: Science Advances. - : AMER ASSOC ADVANCEMENT SCIENCE. - 2375-2548. ; 5:11
  • Tidskriftsartikel (refereegranskat)abstract
    • Interfacing solid-state defect electron spins to other quantum systems is an ongoing challenge. The ground-state spins weak coupling to its environment not only bestows excellent coherence properties but also limits desired drive fields. The excited-state orbitals of these electrons, however, can exhibit stronger coupling to phononic and electric fields. Here, we demonstrate electrically driven coherent quantum interference in the optical transition of single, basally oriented divacancies in commercially available 4H silicon carbide. By applying microwave frequency electric fields, we coherently drive the divacancys excited-state orbitals and induce Landau-Zener-Stuckelberg interference fringes in the resonant optical absorption spectrum. In addition, we find remarkably coherent optical and spin subsystems enabled by the basal divacancys symmetry. These properties establish divacancies as strong candidates for quantum communication and hybrid system applications, where simultaneous control over optical and spin degrees of freedom is paramount.
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4.
  • Morioka, Naoya, et al. (författare)
  • Spin-controlled generation of indistinguishable and distinguishable photons from silicon vacancy centres in silicon carbide
  • 2020
  • Ingår i: Nature Communications. - : NATURE PUBLISHING GROUP. - 2041-1723. ; 11:1
  • Tidskriftsartikel (refereegranskat)abstract
    • Quantum systems combining indistinguishable photon generation and spin-based quantum information processing are essential for remote quantum applications and networking. However, identification of suitable systems in scalable platforms remains a challenge. Here, we investigate the silicon vacancy centre in silicon carbide and demonstrate controlled emission of indistinguishable and distinguishable photons via coherent spin manipulation. Using strong off-resonant excitation and collecting zero-phonon line photons, we show a two-photon interference contrast close to 90% in Hong-Ou-Mandel type experiments. Further, we exploit the systems intimate spin-photon relation to spin-control the colour and indistinguishability of consecutively emitted photons. Our results provide a deep insight into the systems spin-phonon-photon physics and underline the potential of the industrially compatible silicon carbide platform for measurement-based entanglement distribution and photonic cluster state generation. Additional coupling to quantum registers based on individual nuclear spins would further allow for high-level network-relevant quantum information processing, such as error correction and entanglement purification. Defects in silicon carbide can act as single photon sources that also have the benefit of a host material that is already used in electronic devices. Here the authors demonstrate that they can control the distinguishability of the emitted photons by changing the defect spin state.
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5.
  • Nagy, Roland, et al. (författare)
  • High-fidelity spin and optical control of single silicon-vacancy centres in silicon carbide
  • 2019
  • Ingår i: Nature Communications. - : NATURE PUBLISHING GROUP. - 2041-1723. ; 10
  • Tidskriftsartikel (refereegranskat)abstract
    • Scalable quantum networking requires quantum systems with quantum processing capabilities. Solid state spin systems with reliable spin-optical interfaces are a leading hardware in this regard. However, available systems suffer from large electron-phonon interaction or fast spin dephasing. Here, we demonstrate that the negatively charged silicon-vacancy centre in silicon carbide is immune to both drawbacks. Thanks to its (4)A(2) symmetry in ground and excited states, optical resonances are stable with near-Fourier-transform-limited linewidths, allowing exploitation of the spin selectivity of the optical transitions. In combination with millisecond-long spin coherence times originating from the high-purity crystal, we demonstrate high-fidelity optical initialization and coherent spin control, which we exploit to show coherent coupling to single nuclear spins with similar to 1 kHz resolution. The summary of our findings makes this defect a prime candidate for realising memory-assisted quantum network applications using semiconductor-based spin-to-photon interfaces and coherently coupled nuclear spins.
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6.
  • Pironi, Loris, et al. (författare)
  • Characteristics of adult patients with chronic intestinal failure due to short bowel syndrome: An international multicenter survey
  • 2021
  • Ingår i: Clinical Nutrition ESPEN. - : Elsevier BV. - 2405-4577. ; 45, s. 433-441
  • Tidskriftsartikel (refereegranskat)abstract
    • Background and aims: The case-mix of patients with intestinal failure due to short bowel syndrome (SBS-IF) can differ among centres and may also be affected by the timeframe of data collection. Therefore, the ESPEN international multicenter cross-sectional survey was analyzed to compare the characteristics of SBS-IF cohorts collected within the same timeframe in different countries. Methods: The study included 1880 adult SBS-IF patients collected in 2015 by 65 centres from 22 countries. The demographic, nutritional, SBS type (end jejunostomy, SBS-J; jejuno-colic anastomosis, SBS-JC; jejunoileal anastomosis with an intact colon and ileocecal valve, SBS-JIC), underlying disease and intravenous supplementation (IVS) characteristics were analyzed. IVS was classified as fluid and electrolyte alone (FE) or parenteral nutrition admixture (PN). The mean daily IVS volume, calculated on a weekly basis, was categorized as <1, 1–2, 2–3 and >3 L/day. Results: In the entire group: 60.7% were females and SBS-J comprised 60% of cases, while mesenteric ischaemia (MI) and Crohn’ disease (CD) were the main underlying diseases. IVS dependency was longer than 3 years in around 50% of cases; IVS was infused ≥5 days/week in 75% and FE in 10% of cases. Within the SBS-IF cohort: CD was twice and thrice more frequent in SBS-J than SBS-JC and SBS-JIC, respectively, while MI was more frequent in SBS-JC and SBS-JIC. Within countries: SBS-J represented 75% or more of patients in UK and Denmark and 50-60% in the other countries, except Poland where SBS-JC prevailed. CD was the main underlying disease in UK, USA, Denmark and The Netherlands, while MI prevailed in France, Italy and Poland. Conclusions: SBS-IF type is primarily determined by the underlying disease, with significant variation between countries. These novel data will be useful for planning and managing both clinical activity and research studies on SBS.
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7.
  • Udvarhelyi, Peter, et al. (författare)
  • Vibronic States and Their Effect on the Temperature and Strain Dependence of Silicon-Vacancy Qubits in 4H-SiC
  • 2020
  • Ingår i: Physical Review Applied. - : AMER PHYSICAL SOC. - 2331-7019. ; 13:5
  • Tidskriftsartikel (refereegranskat)abstract
    • Silicon-vacancy qubits in silicon carbide (SiC) are emerging tools in quantum-technology applications due to their excellent optical and spin properties. In this paper, we explore the effect of temperature and strain on these properties by focusing on the two silicon-vacancy qubits, V1 and V2, in 4H-SiC. We apply density-functional theory beyond the Born-Oppenheimer approximation to describe the temperature-dependent mixing of electronic excited states assisted by phonons. We obtain a polaronic gap of around 5 and 22 meV for the V1 and V2 centers, respectively, which results in a significant difference in the temperature-dependent dephasing and zero-field splitting of the excited states, which explains recent experimental findings. We also compute how crystal deformations affect the zero-phonon line of these emitters. Our predictions are important ingredients in any quantum applications of these qubits sensitive to these effects.
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  • Resultat 1-7 av 7

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