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- 2019
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Tidskriftsartikel (refereegranskat)
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- Santangelo, James S., et al.
(författare)
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Global urban environmental change drives adaptation in white clover
- 2022
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Ingår i: Science. - : American Association for the Advancement of Science (AAAS). - 0036-8075 .- 1095-9203. ; 375
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Tidskriftsartikel (refereegranskat)abstract
- Urbanization transforms environments in ways that alter biological evolution. We examined whether urban environmental change drives parallel evolution by sampling 110,019 white clover plants from 6169 populations in 160 cities globally. Plants were assayed for a Mendelian antiherbivore defense that also affects tolerance to abiotic stressors. Urban-rural gradients were associated with the evolution of clines in defense in 47% of cities throughout the world. Variation in the strength of clines was explained by environmental changes in drought stress and vegetation cover that varied among cities. Sequencing 2074 genomes from 26 cities revealed that the evolution of urban-rural dines was best explained by adaptive evolution, but the degree of parallel adaptation varied among cities. Our results demonstrate that urbanization leads to adaptation at a global scale.
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- Dagnelund, Daniel, 1980-, et al.
(författare)
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Evidence for a phosphorus-related interfacial defect complex at a GaP/GaNP heterojunction
- 2010
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Ingår i: Physical Review B. Condensed Matter and Materials Physics. - : The American Physical Society. - 1098-0121 .- 1550-235X. ; 81, s. 115334-
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Tidskriftsartikel (refereegranskat)abstract
- Optically detected magnetic resonance (ODMR) studies of molecular beam epitaxial GaNP/GaP structures reveal presence of a P-related complex defect, evident from its resolved hyperfine interaction between an unpaired electronic spin (S=1/2) and a nuclear spin (I = ½) of a 31P atom. The principal axis of the defect is concluded to be along a <111> crystallographic direction from angular dependence of the ODMR spectrum, restricting the P atom (either a PGa antisite or a Pi interstitial) and its partner in the complex defect to be oriented along this direction. The principal values of the electronic g-tensor and hyperfine interaction tensor are determined as: g┴=2.013, g║=2.002, and A┴=130´10-4 cm-1, A║=330´10-4 cm-1, respectively. The interface nature of the defect is clearly manifested by the absence of the ODMR lines originating from two out of four equivalent <111> orientations. Defect formation is shown to be facilitated by nitrogen ion bombardment under non-equilibrium growth conditions and the defect is thermally stable upon post-growth thermal annealing.
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| 5. |
- Dagnelund, Daniel, et al.
(författare)
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Phosphorus-related interfacial defect complex at a GaP/GaNP heterojunction
- 2010
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Konferensbidrag (övrigt vetenskapligt/konstnärligt)abstract
- For full exploration of dilute nitrides in device applications, a better understanding and control of defects located at interfaces involving e.g. Ga(In)NP are required. In this work we report on the first identification of a point defect situated at an interface between two semiconductors: GaNP and GaP. The defect is concluded to be a complex involving a P antisite or a P interstitial in its core, partnered with a neighboring impurity/defect aligned along a <111> direction, from detailed angular dependence studies of the optically detected magnetic resonance (ODMR) spectra at both X- and Q-band microwave frequencies. The principal g and A values, g┴=2.013, g║=2.002, A┴=130x10-4 cm-1 and A║=330x10-4 cm-1, are obtained from a spin Hamiltonian analysis. The interface nature of the defect is clearly evident from the absence of the ODMR lines originating from two out of four equivalent <111> orientations. Defect formation is shown to be facilitated by severe nitrogen ion bombardment under non-equilibrium growth conditions during solid-source molecular beam epitaxy and the defect is thermally stable upon post-growth thermal annealing.
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- Habchi, Johnny, et al.
(författare)
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An anticancer drug suppresses the primary nucleation reaction that initiates the production of the toxic Aβ42 aggregates linked with Alzheimer's disease.
- 2016
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Ingår i: Science Advances. - : American Association for the Advancement of Science (AAAS). - 2375-2548. ; 2:2
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Tidskriftsartikel (refereegranskat)abstract
- The conversion of the β-amyloid (Aβ) peptide into pathogenic aggregates is linked to the onset and progression of Alzheimer's disease. Although this observation has prompted an extensive search for therapeutic agents to modulate the concentration of Aβ or inhibit its aggregation, all clinical trials with these objectives have so far failed, at least in part because of a lack of understanding of the molecular mechanisms underlying the process of aggregation and its inhibition. To address this problem, we describe a chemical kinetics approach for rational drug discovery, in which the effects of small molecules on the rates of specific microscopic steps in the self-assembly of Aβ42, the most aggregation-prone variant of Aβ, are analyzed quantitatively. By applying this approach, we report that bexarotene, an anticancer drug approved by the U.S. Food and Drug Administration, selectively targets the primary nucleation step in Aβ42 aggregation, delays the formation of toxic species in neuroblastoma cells, and completely suppresses Aβ42 deposition and its consequences in a Caenorhabditis elegans model of Aβ42-mediated toxicity. These results suggest that the prevention of the primary nucleation of Aβ42 by compounds such as bexarotene could potentially reduce the risk of onset of Alzheimer's disease and, more generally, that our strategy provides a general framework for the rational identification of a range of candidate drugs directed against neurodegenerative disorders.
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| 7. |
- Thinh, N.Q., et al.
(författare)
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Properties of Ga-interstitial defects in AlxGa 1-xNyP1-y
- 2005
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Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 71:12
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Tidskriftsartikel (refereegranskat)abstract
- A detailed account of the experimental results from optically detected magnetic resonance (ODMR) studies of grown-in defects in (Al)GaNP alloys, prepared by molecular beam epitaxy, is presented. The experimental procedure and an in-depth analysis by a spin Hamiltonian lead to the identification of two Gai defects (Gai-A and Gai-B). New information on the electronic properties of these defects and the recombination processes leading to the observation of the ODMR signals will be provided. These defects are deep-level defects. In conditions when the defect is directly involved in radiative recombination of the near-infrared photoluminescence band, the energy level of the Gai-B defect was estimated to be deeper than ~1.2 eV from either the conduction or valence band edge. In most cases, however, these defects act as nonradiative recombination centers, reducing the efficiency of light emission from the alloys. They can thus undermine the performance of potential photonic devices. High thermal stability is observed for these defects. ©2005 The American Physical Society.
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| 9. |
- Dagnelund, Daniel, 1980-, et al.
(författare)
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Effect of growth conditions on grown-in defect formation and luminescence efficiency in GaInNP epilayers grown by molecular-beam epitaxy.
- 2008
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Ingår i: Physica status solidi (c)Special Issue: E-MRS 2007 Spring Meeting – Symposium F and Conference on Photonic Materials. - Weinheim : Wiley-VCH Verlagsgesellschaft. ; , s. 460-463
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Konferensbidrag (refereegranskat)abstract
- A detailed study of the impact of different growth conditions (i.e. ion bombardment, nitrogen flow and In content) on the defect formation in Ga(In)NP epilayers grown on GaP substrates by solid-source molecular beam epitaxy is performed. Reduced nitrogen ion bombardment during the growth is shown to significantly reduce formation of defects acting as competing recombination centers, such as a Ga interstitial defect and other unidentified defects revealed by optically detected magnetic resonance. Further, high nitrogen flow is found to be even more effective than the ion bombardment in introducing the defects. The incorporation of In by 5.1% is, on the other hand, found not to affect the introduction of defects. The results provide a useful insight into the formation mechanism of the defects that will hopefully shed light on a control of the defect introduction in the alloys by optimizing growth conditions.
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