| 1. |
- Illarionov, Yury, et al.
(författare)
-
Hot-Carrier Degradation and Bias-Temperature Instability in Single-Layer Graphene Field-Effect Transistors : Similarities and Differences
- 2015
-
Ingår i: IEEE Transactions on Electron Devices. - : IEEE. - 0018-9383 .- 1557-9646. ; 62:11, s. 3876-3881
-
Tidskriftsartikel (refereegranskat)abstract
- We present a detailed analysis of hot-carrier degradation (HCD) in graphene field-effect transistors (GFETs) and compare those findings with the bias-temperature instability (BTI). Our results show that the HCD in GFETs is recoverable, similar to its BTI counterpart. Moreover, both the degradation mechanisms strongly interact. Particular attention is paid to the dynamics of HCD recovery, which can be well fitted with the capture/emission time (CET) map model and the universal relaxation function for some stress conditions, quite similar to the BTI in both GFETs and Si technologies. The main result of this paper is an extension of our systematic method for benchmarking new graphene technologies for the case of HCD.
|
|
| 2. |
- Illarionov, Y., et al.
(författare)
-
Interplay between hot carrier and bias stress components in single-layer double-gated graphene field-effect transistors
- 2015
-
Ingår i: European Solid-State Device Research Conference. - : IEEE. - 9781467371339 ; , s. 172-175
-
Konferensbidrag (refereegranskat)abstract
- We examine the interplay between the degradations associated with the bias-temperature instability (BTI) and hot carrier degradation (HCD) in single-layer double-gated graphene field-effect transistors (GFETs). Depending on the polarity of the applied BTI stress, the HCD component acting in conjuction can either accelerate or compensate the degradation. The related phenomena are studied in detail at different temperatures. Our results show that the variations of the charged trap density and carrier mobility induced by both contributions are correlated. Moreover, the electron/hole mobility behaviour agrees with the previously reported attractive/repulsive scattering asymmetry.
|
|
| 3. |
- Illarionov, Yu.Yu., et al.
(författare)
-
Bias-temperature instability in single-layer graphene field-effect transistors : A reliability challenge
- 2014
-
Ingår i: 2014 Silicon Nanoelectronics Workshop, SNW 2014. - : Institute of Electrical and Electronics Engineers (IEEE). - 9781479956777
-
Konferensbidrag (refereegranskat)abstract
- We present a detailed analysis of the bias-temperature instability (BTI) of single-layer graphene field-effect transistors (GFETs). We demonstrate that the dynamics can be systematically studied when the degradation is expressed in terms of a Dirac point voltage shift. Under these prerequisites it is possible to understand and benchmark both NBTI and PBTI using models previously developed for Si technologies. In particular, we show that the capture/emission time (CET) map approach can be also applied to GFETs and that recovery in GFETs follows the same universal relaxation trend as their Si counterparts. While the measured defect densities can still be considerably larger than those known from Si technology, the dynamics of BTI are in general comparable, allowing for quantitative benchmarking of the graphene/dielectric interface quality.
|
|
| 4. |
- Illarionov, Y.Yu., et al.
(författare)
-
Bias-temperature instability on the back gate of single-layer double-gated graphene field-effect transistors
- 2016
-
Ingår i: Japanese Journal of Applied Physics. - : Institute of Physics (IOP). - 0021-4922 .- 1347-4065. ; 55:4
-
Tidskriftsartikel (refereegranskat)abstract
- We study the positive and negative bias-temperature instabilities (PBTI and NBTI) on the back gate of single-layer double-gated graphene fieldeffect transistors (GFETs). By analyzing the resulting degradation at different stress times and oxide fields we show that there is a significant asymmetry between PBTI and NBTI with respect to their dependences on these parameters. Finally, we compare the results obtained on the high-k top gate and SiO2 back gate of the same device and show that SiO2 gate is more stable with respect to BTI.
|
|
| 5. |
- Illarionov, Yu.Yu., et al.
(författare)
-
Hot-carrier degradation in single-layer double-gated graphene field-effect transistors
- 2015
-
Ingår i: IEEE International Reliability Physics Symposium Proceedings. - : IEEE conference proceedings. - 9781467373623 ; , s. XT21-XT26
-
Konferensbidrag (refereegranskat)abstract
- We report a first study of hot-carrier degradation (HCD) in graphene field-effect transistors (GFETs). Our results show that HCD in GFETs is recoverable, similarly to the bias-temperature instability (BTI). Depending on the top gate bias polarity, the presence of HCD may either accelerate or suppress BTI. Contrary to BTI, which mainly results in a change of the charged trap density in the oxide, HCD also leads to a mobility degradation which strongly correlates with the magnitude of the applied stress.
|
|
| 6. |
- Illarionov, Yu.Yu., et al.
(författare)
-
Impact of hot carrier stress on the defect density and mobility in double-gated graphene field-effect transistors
- 2015
-
Ingår i: EUROSOI-ULIS 2015 - 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon. - 9781479969111 ; , s. 81-84
-
Konferensbidrag (refereegranskat)abstract
- We study the impact of hot-carrier degradation (HCD) on the performance of graphene field-effect transistors (GFETs) for different polarities of HC and bias stress. Our results show that the impact of HCD consists in a change of both charged defect density and carrier mobility. At the same time, the mobility degradation agrees with an attractive/repulsive scattering asymmetry and can be understood based on the analysis of the defect density variation.
|
|
| 7. |
- Kataria, S., et al.
(författare)
-
Chemical vapor deposited graphene : From synthesis to applications
- 2014
-
Ingår i: Physica Status Solidi (a) applications and materials science. - : Wiley. - 1862-6300 .- 1862-6319. ; 211:11, s. 2439-2449
-
Forskningsöversikt (refereegranskat)abstract
- Graphene is a material with enormous potential for numerous applications. Therefore, significant efforts are dedicated to large-scale graphene production using a chemical vapor deposition (CVD) technique. In addition, research is directed at developing methods to incorporate graphene in established production technologies and process flows. In this paper, we present a brief review of available CVD methods for graphene synthesis. We also discuss scalable methods to transfer graphene onto desired substrates. Finally, we discuss potential applications that would benefit from a fully scaled, semiconductor technology compatible production process.
|
|
| 8. |
- Lemme, Max C., et al.
(författare)
-
Alternative graphene devices : Beyond field effect transistors
- 2012
-
Ingår i: Device Research Conference (DRC), 2012 70th Annual. - : IEEE. - 9781467311618 ; , s. 24a-24b
-
Konferensbidrag (refereegranskat)abstract
- The future manufacturability of graphene devices depends on the availability of large-scale graphene fabrication methods. While chemical vapor deposition and epitaxy from silicon carbide both promise scalability, they are not (yet) fully compatible with silicon technology. Direct growth of graphene on insulating substrates would be a major step, but is still at a very early stage [1]. This has implications on potential entry points of graphene as an add-on to mainstream silicon technology, which will be discussed in the talk.
|
|
| 9. |
- Lemme, Max C., et al.
(författare)
-
Graphene for More Moore and More Than Moore applications
- 2012
-
Ingår i: IEEE Silicon Nanoelectronics Workshop, SNW. - : IEEE. - 9781467309943 ; , s. 6243322-
-
Konferensbidrag (refereegranskat)abstract
- Graphene has caught the attention of the electronic device community as a potential future option for More Moore and More Than Moore devices and applications. This is owed to its remarkable material properties, which include ballistic conductance over several hundred nanometers or charge carrier mobilities of several 100.000 cm 2/Vs in pristine graphene. Furthermore, standard CMOS technology may be applied to graphene in order to make devices. Integrated graphene devices, however, are performance limited by scattering due to defects in the graphene and its dielectric environment [1, 2] and high contact resistance [3, 4]. In addition, graphene has no energy band gap (Figure 1) and hence graphene MOSFETs (GFETs) cannot be switched off, but instead show ambipolar behaviour [5]. This has steered interest away from logic to analog radio frequency (RF) applications [6, 7]. This talk will systematically compare the expected RF performance of realistic GFETs with current silicon CMOS technology [8]. GFETs slightly lag behind in maximum cut-off frequency F T,max (Figure 2) up to a carrier mobility of 3000 cm 2/Vs, where they can achieve similar RF performance as 65nm silicon FETs. While a strongly nonlinear voltage-dependent gate capacitance inherently limits performance, other parasitics such as contact resistance are expected to be optimized as GFET process technology improves.
|
|
| 10. |
- Li, Jiantong, et al.
(författare)
-
A simple route towards high-concentration surfactant-free graphene dispersions
- 2012
-
Ingår i: Carbon. - : Elsevier BV. - 0008-6223 .- 1873-3891. ; 50:8, s. 3113-3116
-
Tidskriftsartikel (refereegranskat)abstract
- A simple solvent exchange method is introduced to prepare high-concentration and surfactant-free graphene liquid dispersion. Natural graphite flakes are first exfoliated into graphene in dimethylformamide (DMF). DMF is then exchanged by terpineol through distillation, relying on their large difference in boiling points. Graphene can then be concentrated thanks to the volume difference between DMF and terpineol. The concentrated graphene dispersions are used to fabricate transparent conductive thin films, which possess comparable properties to those prepared by more complex methods.
|
|
