| 1. |
- Morvan, E, et al.
(författare)
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Channeling implantations of Al+ into 6H silicon carbide
- 1999
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 74, s. 3990-3992
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Tidskriftsartikel (refereegranskat)abstract
- A strong channeling effect of Al+ ions implanted into crystalline SiC has been observed by Monte Carlo simulations and experiments especially designed to demonstrate this phenomenon have been performed. Depth distributions of implanted Al were measured for on- and controlled off-axis Al implantations using secondary ion mass spectrometry (SIMS). Much deeper and wider profiles are obtained for the on-axis implantations as compared to off-axis implants. For higher doses, the experiment also reveals the growth of an intermediate peak slightly deeper than the random peak. The origin of the intermediate peak can be understood by combining SIMS results with Monte Carlo simulations, which motivates the development of advanced simulation tools for the ion implantation process in SiC. (C) 1999 American Institute of Physics. [S0003-6951(99)01426-6].
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| 2. |
- Brosselard, P, et al.
(författare)
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High temperature behaviour of 3.5 kV 4H-SiC JBS diodes
- 2007
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Ingår i: Proceedings of the International Symposium on Power Semiconductor Devices and ICs. ; , s. 285-288
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Konferensbidrag (refereegranskat)abstract
- 4H-SiC JBS diodes have been manufactured on a Norstel epitaxied N/N + substrate using a JTE as edge termination. A breakdown voltage higherthan 3.5 kV has been measured on 0.16 and 2.56 mm 2 diodes. The leakage current in the 25°C-300°C temperature range depends on the bipolar/Schottky ratio whereas in forward mode its impact is minor. Diodes have been stressed in DC mode to show that the 2.56 mm 2 diodes have a slight forward voltage degradation independently of the layout. In switching mode, the recovery charge is only 20 nC for a 4A current switched at 300°C.
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| 3. |
- Brosselard, P, et al.
(författare)
-
Low loss, large area 4.5 kV 4H-SiC PIN diodes with reduced forward voltage drift
- 2009
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Ingår i: SEMICONDUCTOR SCIENCE AND TECHNOLOGY. - : IOP Publishing. - 0268-1242 .- 1361-6641. ; 24:9, s. 095004-
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Tidskriftsartikel (refereegranskat)abstract
- 4H-SiC PIN diodes have been fabricated on a Norstel P+/N/N+ substrate with a combination of Mesa and JTE as edge termination. A breakdown voltage of 4.5 kV has been measured at 1 mu A for devices with an active area of 2.6 mm(2). The differential on-resistance at 15 A (600 A cm(-2)) was of only 1.7 m Omega cm(2) (25 degrees C) and 1.9 m Omega cm(2) at 300 degrees C. The reduced recovery charge was of 300 nC for a switched current of 15 A (500 V) at 300 degrees C. 20% of the diodes showed no degradation at all after 60 h of dc stress (25-225 degrees C). Other 30% of the diodes exhibit a reduced voltage shift below 1 V. For those diodes, the leakage current remains unaffected after the dc stress. Electroluminescence investigations reveal a very low density of stacking faults after the dc stress. The manufacturing yield evidences the efficiency of the substrate surface preparation and our technological process.
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