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- Claesson, A., et al.
(författare)
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Diode-pumped miniature lasers using microstructured silicon carriers
- 2000
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Ingår i: Electronics Letters. - : Institution of Engineering and Technology (IET). - 0013-5194 .- 1350-911X. ; 36:5, s. 433-434
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Tidskriftsartikel (refereegranskat)abstract
- A new versatile design concept for compact diode-pumped solid-state lasers based on a microstructured silicon carrier with etched V-grooves is presented. The carrier provides efficient thermal management as well as compact integration and alignment of all active acid passive optical components. In initial experiments, an Nd:YAG laser delivered a continuous-wave output of 3W.
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- Gunnarsson Sarius, Niklas, et al.
(författare)
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Electrochemically based low-cost high precision processing in MOEMS packaging
- 2009
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Ingår i: Electrochimica Acta. - : Elsevier BV. - 0013-4686 .- 1873-3859. ; 54:9, s. 2458-2465
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Tidskriftsartikel (refereegranskat)abstract
- Precision processing in MOEMS (micro-opto-electromechanical systems) packaging has been studied based on electrochemical processes with the purpose of establishing technology for low-cost multifunctional encapsulation of microsystems and assembly of opto-electric access links in polymer. The electrochemically based processes studied in this paper include: 1. Electroforming of a polymer moulding tool (stamper) in a nickel sulphamate electrolyte on a highprecision 3D etched silicon template. 2. Patterning of 3D surfaces by an electrophoretic photoresist. 3. Precision plating of Au and Sn for self-alignment of chips by eutectic Au-Sn solder. The results show that nickel stampers with adequately low internal stress can be electroformed on 3D silicon wafers. Furthermore, 3D polymer samples manufactured by the nickel stampers can be patterned with metal lines down to 20 mu m width using electrophoretic photoresist. Finally, eutectic Au-Sn solder bumps are realized by electroplating of Au and Sn followed by reflowing, satisfying the demands on dimension and alloy composition control over a 4 in. Si wafer.
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- Holm, J., et al.
(författare)
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Optical arrangement
- 2000
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Patent (populärvet., debatt m.m.)abstract
- A solid-state laser or arrangement for wavelength conversion is disclosed, which in its simplest embodiment is comprised of a light-generating body (102) arranged in a supporting means (103), the light-generating body (102) having a shape which is substantially complementary to a guiding structure (104) which is formed in the supporting means (103). The guiding structure (104) is formed with a high degree of accuracy, for instance, by etching the supporting means (103) or by replicating an original. Between the light-generating body (102) and the guiding structure (104) of the supporting means a thin contact layer (105) is arranged, the purpose of which is to increase the adherence to and/or the heat transfer to the supporting means (103). Due to the fact that the contact layer (105) is a deformable material, possible discrepancies as regards complementarity between the guiding structure (104) and the light-generating body (102) will be filled by the contact layer (105), whereby a close fit is obtained between the complementary structures.
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| 9. |
- Holm, J., et al.
(författare)
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Optical arrangement
- 1999
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Patent (populärvet., debatt m.m.)abstract
- A solid-state laser or arrangement for wavelength conversion is disclosed, which in its simplest embodiment is comprised of a light-generating body (102) arranged in a supporting means (103), the light-generating body (102) having a shape which is substantially complementary to a guiding structure (104) which is formed in the supporting means (103). The guiding structure (104) is formed with a high degree of accuracy, for instance, by etching the supporting means (103) or by replicating an original. Between the light-generating body (102) and the guiding structure (104) of the supporting means a thin contact layer (105) is arranged, the purpose of which is to increase the adherence to and/or the heat transfer to the supporting means (103). Due to the fact that the contact layer (105) is a deformable material, possible discrepancies as regards complementarity between the guiding structure (104) and the light-generating body (102) will be filled by the contact layer (105), whereby a close fit is obtained between the complementary structures.
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