| 1. |
- Cunha, Jose M. V., et al.
(författare)
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High-Performance and Industrially Viable Nanostructured SiOx Layers for Interface Passivation in Thin Film Solar Cells
- 2021
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Ingår i: Solar RRL. - : John Wiley & Sons. - 2367-198X. ; 5:3
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Tidskriftsartikel (refereegranskat)abstract
- Herein, it is demonstrated, by using industrial techniques, that a passivation layer with nanocontacts based on silicon oxide (SiOx) leads to significant improvements in the optoelectronical performance of ultrathin Cu(In,Ga)Se-2 (CIGS) solar cells. Two approaches are applied for contact patterning of the passivation layer: point contacts and line contacts. For two CIGS growth conditions, 550 and 500 degrees C, the SiOx passivation layer demonstrates positive passivation properties, which are supported by electrical simulations. Such positive effects lead to an increase in the light to power conversion efficiency value of 2.6% (absolute value) for passivated devices compared with a nonpassivated reference device. Strikingly, both passivation architectures present similar efficiency values. However, there is a trade-off between passivation effect and charge extraction, as demonstrated by the trade-off between open-circuit voltage (V-oc) and short-circuit current density (J(sc)) compared with fill factor (FF). For the first time, a fully industrial upscalable process combining SiOx as rear passivation layer deposited by chemical vapor deposition, with photolithography for line contacts, yields promising results toward high-performance and low-cost ultrathin CIGS solar cells with champion devices reaching efficiency values of 12%, demonstrating the potential of SiOx as a passivation material for energy conversion devices.
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| 2. |
- Cunha, José M. V., et al.
(författare)
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Understanding the AC Equivalent Circuit Response of Ultrathin Cu(In,Ga)Se2 Solar Cells
- 2019
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Ingår i: IEEE Journal of Photovoltaics. - 2156-3381 .- 2156-3403. ; 9:5, s. 1442-1448
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Tidskriftsartikel (refereegranskat)abstract
- This paper aims to study the ac electrical response of standard-thick, ultrathin, and passivated ultrathin Cu(In,Ga)Se 2 (CIGS) solar cells. Ultrathin CIGS is desired to reduce production costs of CIGS solar cells. Equivalent circuits for modeling the behavior of each type of solar cells in ac regime are based on admittance measurements. It is of the utmost importance to understand the ac electrical behavior of each device, as the electrical behavior of ultrathin and passivated ultrathin CIGS devices is yet to be fully understood. The analysis shows a simpler ac equivalent circuit for the ultrathin device without passivation layer, which might be explained by the lowered bulk recombination for thin-film CIGS solar cells when compared with reference thick ones. Moreover, it is observed an increase in shunt resistance for the passivated ultrathin device, which strengthens the importance of passivation for shunts mitigation when compared with unpassivated devices.
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