| 1. |
- Cherednichenko, Serguei, 1970, et al.
(författare)
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Gain bandwidth of NbN hot-electron bolometer terahertz mixers on 1.5 um Si3N4 /SiO2 membranes
- 2007
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Ingår i: Journal of Applied Physics. ; 101:12, s. 124508-1-(6)-
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Tidskriftsartikel (refereegranskat)abstract
- The gain bandwidth of NbN hot-electron bolometer terahertz mixers on electrically thin Si3N4 /SiO2 membranes was experimentally investigated and compared with that of HEB mixers on bulk substrates. A gain bandwidth of 3.5 GHz is achieved on bulk silicon, whereas the gain bandwidth is reduced down to 0.6–0.9 GHz for mixers on 1.5 um Si3 N4 /SiO2 membranes. We show that application of a MgO buffer layer on the membrane extends the gain bandwidth to 3 GHz. The experimental data were analyzed using the film-substrate acoustic mismatch approach.
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| 2. |
- Kawamura, J., et al.
(författare)
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Low noise NbN lattice-cooled superconducting hot-electron bolometric mixers at submillimeter wavelengths
- 1997
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 70:12, s. 1619-1621
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Tidskriftsartikel (refereegranskat)abstract
- Lattice-cooled superconducting hot-electron bolometric mixers are used in a submillimeter-wave waveguide heterodyne receiver. The mixer elements are niobium nitride film with 3.5 nm thickness and ∼ 10 μm2 area. The local oscillator power for optimal performance is estimated to be 0.5 μW, and the instantaneous bandwidth is 2.2 GHz. At an intermediate frequency centered at 1.4 GHz with 200 MHz bandwidth, the double sideband receiver noise temperature is 410 K at 430 GHz. The receiver has been used to detect molecular line emission in a laboratory gas cell.
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| 3. |
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| 4. |
- Svechnikov, S., et al.
(författare)
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Spiral antenna nbn hot-electron bolometer mixer at submm requencies
- 1997
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Ingår i: IEEE Transactions on Applied Superconductivity. - : Institute of Electrical and Electronics Engineers (IEEE). - 1558-2515 .- 1051-8223. ; 7:2, s. 3395-3398
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Tidskriftsartikel (refereegranskat)abstract
- We have studied the phonon-cooled hot-electron bolometer (HEB) as a quasioptical mixer based on a spiral antenna designed for the 0.3-1 THz frequency band and fabricated on sapphire and high resistivity silicon substrates. HEB devices were produced from superconducting 3.5-5 nm thick NbN films with a critical temperature 10-12 K and a critical current density of approximately 10/sup 7/ A/cm/sup 2/ at 4.2 K. For these devices we reached a DSB receiver noise temperature below 1500 K, a total conversion loss of L/sub t/=16 dB in the 500-700 GHz frequency range, an IF bandwidth of 3-4 GHz and an optimal LO absorbed power of /spl sime/4 /spl mu/W. We experimentally analyzed various contributions to the conversion loss and obtained an RF coupling factor of about 5 dB, internal mixer loss of 10 dB and IF mismatch of 1 dB.
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