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| 2. |
- Carlsson, N, et al.
(författare)
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IMPROVED SIZE HOMOGENEITY OF INP-ON-GAINP STRANSKI-KRASTANOW ISLANDS BY GROWTH ON A THIN GAP INTERFACE LAYER
- 1995
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Ingår i: Journal of Crystal Growth. - : Elsevier BV. - 0022-0248. ; 156:1-2, s. 23-29
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Tidskriftsartikel (refereegranskat)abstract
- Coherent InP nano-sized islands, embedded into GaInP, have been grown by metal-organic vapour phase epitaxy using the Stranski-Krastanow growth mode. Photoluminescence, atomic force microscopy and transmission electron microscopy studies show that the insertion of a thin ∼ 4 monolayer thick GaP layer affects the critical thickness of the subsequently deposited two-dimensional InP wetting layer, increasing it from ∼ 1.5 monolayers (without an inserted GaP layer) to ∼ 2.5 monolayers (with an inserted GaP layer). We demonstrate that the inserted GaP layer affects also the island formation. The bimodal size distribution of Stranski-Krastanow islands, typical for low InP coverages, can be overcome without island coalescence by deposition on top of the thin GaP layer, where a coverage of InP of about 3.5–4.5 monolayers results in the formation of almost only the larger, fully developed, pyramidal islands. Annealing experiments at growth temperature of 580°C show that these islands (base area ≈ 40 × 50 nm2, height ≈ 10–15 nm, surface density ≈ (1−2) × 109 cm−2) are rather stable in a time-scale over several minutes before they slowly undergo an Ostwald ripening process.
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| 5. |
- Karlsson, L. S., et al.
(författare)
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Structural Characterisation of GaP <111 > B Nanowires by HRTEM
- 2008
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Ingår i: Microscopy of Semiconducting Material 2007. - 0930-8989. - 9781402086144 ; 120, s. 229-232
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Konferensbidrag (refereegranskat)abstract
- GaP < 111 > B nanowires are dominated by (111) twins orthogonal to the growth direction and show well-developed {111} side-facets. Based on this, a 3D-model has been constructed with a cross-section of an octahedron used as a building block. The twins can be of ortho- or para type i.e. by 60 degrees about the growth axis or 180 degrees in the twin plane. The segment thickness variation follows an exponential distribution with a clear dependence oil growth ternperature. Multislice simulations show different features of the twin types that are useful for further characterisation.
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| 6. |
- Kindlund, Hanna, et al.
(författare)
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Kinetic Engineering of Wurtzite and Zinc-Blende AlSb Shells on InAs Nanowires
- 2018
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Ingår i: Nano Letters. - : American Chemical Society (ACS). - 1530-6984 .- 1530-6992. ; 18:9, s. 5775-5781
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Tidskriftsartikel (refereegranskat)abstract
- Using AlSb as the model system, we demonstrate that kinetic limitations can lead to the preferential growth of wurtzite (WZ) AlSb shells rather than the thermodynamically stable zinc-blende (ZB) AlSb and that the WZ and ZB relative thickness can be tuned by a careful control of the deposition parameters. We report selective heteroepitaxial radial growth of AlSb deposited by metal-organic vapor phase epitaxy (MOVPE) on InAs nanowire core templates with engineered lengths of axial WZ and ZB segments. AlSb shell thickness, crystal phase, nanostructure, and composition are investigated as a function of the shell growth temperature, Ts, using scanning electron microscopy, transmission electron microscopy, electron tomography, and energy-dispersive X-ray spectroscopy. We find that ZB- and WZ-structured AlSb shells grow heteroepitaxially around the ZB and WZ segments of the InAs core, respectively. Surprisingly, at 390 < Ts < 450 °C, the WZ-AlSb shells are thicker than the ZB-AlSb shells, and their thickness increases with decreasing Ts. In comparison, the ZB-AlSb shell thicknesses increase slightly with increasing Ts. We find that the increased thickness of the WZ-AlSb shells is due to the formation and enhanced deposition on {112-0} facets rather than on the more commonly grown {101-0} sidewall facets. Overall, these results, which are in direct contrast with previous reports suggesting that heteroepitaxial radial growth of III-antimonides is always favored on the ZB-structure facets, indicate that the growth of WZ-AlSb is preferred over the thermodynamically stable ZB-AlSb at lower growth temperatures. We attribute this behavior to kinetic limitations of MOVPE of AlSb on ZB and WZ phases of InAs.
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| 7. |
- Mårtensson, T, et al.
(författare)
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III-V nanowires on Si and nanowire arrays
- 2005
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Ingår i: Book of abstracts: 342nd WE-Heraeus-Seminar Sci and Technol of Inorganic Nanowires, Bad Honnef, Germany (2005).
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Konferensbidrag (övrigt vetenskapligt/konstnärligt)
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