| 1. |
- Ohlsson, B. J., et al.
(författare)
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Size-, shape-, and position-controlled GaAs nano-whiskers
- 2001
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 79:20, s. 3335-3337
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Tidskriftsartikel (refereegranskat)abstract
- We have developed a technique for the synthesis of size-selected, GaAs, epitaxial nano-whiskers, grown on a crystalline substrate. As catalysts, we used size-selected gold aerosol particles, which enabled us to fully vary the surface coverage independently of the whisker diameter. The whiskers were rod shaped, with a uniform diameter between 10 and 50 nm, correlated to the size of the catalytic seed. Furthermore, by the use of nano-manipulation of the aerosol particles by means of atomic force microscopy, we can nucleate individual nano-whiskers in a controlled manner at specific positions on a substrate with accuracy on the nm level.
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| 2. |
- Arve, K, et al.
(författare)
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Analysis of the state and size of silver on alumina in effective removal of NOx from oxygen rich exhaust gas
- 2006
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Ingår i: Journal of Nanoscience and Nanotechnology. - : American Scientific Publishers. - 1533-4880 .- 0000-0000. ; 6:4, s. 1076-1083
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Tidskriftsartikel (refereegranskat)abstract
- Ag/alumina catalysts with different silver contents for octane-SCR were prepared by impregnation and incipient wetness methods. Activity tests revealed that the decisive factor for high activity is not only a high dispersion of silver, but also the ability of the system to redisperse clustered silver. Determination of dispersion by TEM/HAADF and O-2-chemisorption experiments resulted in values close to each other even if the results were not directly comparable. This is suggested to be due to not complete silver reduction below 700 degrees C and the samples being very heterogeneous in terms of particle size, e.g., having a bimodal size distribution. Small charged Ag-n(delta+) clusters containing 2-8 silver atoms highly prevailed in the samples containing < 2 wt% Ag and exhibiting high octane-SCR activity In highly loaded Ag/alumina samples or those reduced and reoxidized at high temperature (> 400 degrees C), large metallic particles are stabilized, resulting in poor conversion of NOx to N-2.
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| 3. |
- Arve, K, et al.
(författare)
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Structure-activity relationship in HC-SCR of NOx, by TEM, O-2-chemisorption, and EDXS study of Ag/Al2O3
- 2006
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Ingår i: The Journal of Physical Chemistry Part B. - : American Chemical Society (ACS). - 1520-5207 .- 1520-6106. ; 110:1, s. 420-427
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Tidskriftsartikel (refereegranskat)abstract
- Ag/alumina catalysts with different silver loading (1.28 - 6 wt %) for lean NO reduction activity were prepared by impregnation and the incipient wetness method. Complementary HRTEM, HAADF, O-2-chemisorption, and EDXS studies were applied to investigate the dependence between silver particle size and catalytic activities of the prepared materials. The catalyst with the lowest silver loading (1.28 wt %) was found to be the most active catalyst in terms of reacted NO molecules per mole of silver. On the basis of the HRTEM, HAADF, and O-2-chemisorption studies it could be concluded that the mean particle size or particle size distribution of the samples alone could not explain the big difference in the activities. EDXS analyses showed on the other hand that all of the samples were very heterogeneous in terms of particle size distribution, e.g., including both small and very big particles. Furthermore, both metallic silver and mainly hexagonal silver oxide (Ag2O) were found to be present in the samples. Despite the valuable information provided by ex situ characterization of the prepared samples, it needs to be emphasized that establishing a structure-reactivity relationship for this type of catalyst requires in situ characterization.
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| 4. |
- Bi, Zhaoxia, et al.
(författare)
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High In-content InGaN nano-pyramids : Tuning crystal homogeneity by optimized nucleation of GaN seeds
- 2018
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Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 123:2
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Tidskriftsartikel (refereegranskat)abstract
- Uniform arrays of submicron hexagonal InGaN pyramids with high morphological and material homogeneity, reaching an indium composition of 20%, are presented in this work. The pyramids were grown by selective area metal-organic vapor phase epitaxy and nucleated from small openings in a SiN mask. The growth selectivity was accurately controlled with diffusion lengths of the gallium and indium species, more than 1 μm on the SiN surface. High material homogeneity of the pyramids was achieved by inserting a precisely formed GaN pyramidal seed prior to InGaN growth, leading to the growth of well-shaped InGaN pyramids delimited by six equivalent 10 1 ̄ 1 facets. Further analysis reveals a variation in the indium composition to be mediated by competing InGaN growth on two types of crystal planes, 10 1 ̄ 1 and (0001). Typically, the InGaN growth on 10 1 ̄ 1 planes is much slower than on the (0001) plane. The formation of the (0001) plane and the growth of InGaN on it were found to be dependent on the morphology of the GaN seeds. We propose growth of InGaN pyramids seeded by 10 1 ̄ 1-faceted GaN pyramids as a mean to avoid InGaN material grown on the otherwise formed (0001) plane, leading to a significant reduction of variations in the indium composition in the InGaN pyramids. The InGaN pyramids in this work can be used as a high-quality template for optoelectronic devices having indium-rich active layers, with a potential of reaching green, yellow, and red emissions for LEDs.
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| 5. |
- Bi, Zhaoxia, et al.
(författare)
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Self-assembled InN quantum dots on side facets of GaN nanowires
- 2018
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Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 123:16
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Tidskriftsartikel (refereegranskat)abstract
- Self-assembled, atomic diffusion controlled growth of InN quantum dots was realized on the side facets of dislocation-free and c-oriented GaN nanowires having a hexagonal cross-section. The nanowires were synthesized by selective area metal organic vapor phase epitaxy. A 3 Å thick InN wetting layer was observed after growth, on top of which the InN quantum dots formed, indicating self-assembly in the Stranski-Krastanow growth mode. We found that the InN quantum dots can be tuned to nucleate either preferentially at the edges between GaN nanowire side facets, or directly on the side facets by tuning the adatom migration by controlling the precursor supersaturation and growth temperature. Structural characterization by transmission electron microscopy and reciprocal space mapping show that the InN quantum dots are close to be fully relaxed (residual strain below 1%) and that the c-planes of the InN quantum dots are tilted with respect to the GaN core. The strain relaxes mainly by the formation of misfit dislocations, observed with a periodicity of 3.2 nm at the InN and GaN hetero-interface. The misfit dislocations introduce I1 type stacking faults (...ABABCBC...) in the InN quantum dots. Photoluminescence investigations of the InN quantum dots show that the emissions shift to higher energy with reduced quantum dot size, which we attribute to increased quantum confinement.
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| 6. |
- Birch, J., et al.
(författare)
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Growth and structural characterization of single-crystal (001) oriented Mo V superlattices
- 1990
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Ingår i: Vacuum. - 0042-207X. ; 41:4-6, s. 1231-1233
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Tidskriftsartikel (refereegranskat)abstract
- Dual target magnetron sputtering has been used to grow single-crysal MoV superlattice structures (SLS) with modulation wavelengths λ ranging from 0.6 to 17.7 nm on (001) oriented MgO substrates held at temperatures Ts between 600 and 900°C. High resolution cross-sectional transmission electron microscopy (HRXTEM) images and comparisions between experimental and calculated X-ray diffraction (XRD) spectra show that SLS with an interface sharpness of ±1 monolayer (±0.15 nm) could be grown for λ ⩽ 4.9 nm and Ts ⩽ 700°C whereas interdiffusion broadened the interfaces for higher Ts values. This interface sharpness was also verified by growing SLS with λ = 0.6 nm (one unit cell of Mo and one of V) which exhibited strong superlattice satellites in both XRD and selected area electron diffraction (SAED), and contrast from the individual layers was also observed in HRXTEM images. For λ > 4.9 nm, HRXTEM images showed non-uniform layers and the XRD peak width (FWHM) increased by 250%.
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| 7. |
- Blennow Tullmar, Peter, et al.
(författare)
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Niobium-doped strontium titanates as SOFC anodes
- 2008. - 4
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Ingår i: Advances in Solid Oxide Fuel Cells III. - 9780470196359 ; 28, s. 203-214
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Konferensbidrag (refereegranskat)abstract
- Sr-vacancy compensated Nb-doped SrTiO3 with the nominal composition Sr0.94Ti09Nb0.1O3 has been evaluated as part of a solid oxide fuel cell (SOFC) anode material in terms of redox stability, electrical conductivity, as well as electrochemical properties. Sr0.94Ti0.9Nb0.1O3 has been synthesized with a recently developed modified glycine-nitrate process. The synthesized powders have been calcined and sintered in air or in 9% H 2 / N2 between 800 - 1400 °C After calcination the samples were single phase Nb-doped strontium titanate with grain sizes of less than 100 nm in diameter on average. The phase purity, defect structure, and microstructure of the materials have been analyzed with SEM, XRD, and TGA. The electrical conductivity of the Nb-doped titanate decreased with increasing temperature and showed a phonon scattering conduction mechanism with σ > 120 S/cm at 1000 °C (in 9 % H2 / N2). The electrochemical properties of Sr0.94Ti0.9Nb 0.1O3 and a composite electrode of Sr 0.94Ti0.9Nb0.1O3/YSZ have been investigated by using a symmetrical cell configuration. The tests indicated that the electrodes were redox stable and showed a potential ability of the Nb-doped titanates to be used as a part of a SOFC anode. However, the catalytic activity of the materials was not sufficient and it needs to be improved if titanate based materials are to be realized as constituents in SOFC anodes.
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| 8. |
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| 9. |
- Kallioinen, J, et al.
(författare)
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Photoinduced ultrafast dynamics of Ru(dcbpy)(2)(NCS)(2)-sensitized nanocrystalline TiO2 films: The influence of sample preparation and experimental conditions
- 2004
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Ingår i: The Journal of Physical Chemistry Part B. - : American Chemical Society (ACS). - 1520-5207 .- 1520-6106. ; 108:20, s. 6365-6373
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Tidskriftsartikel (refereegranskat)abstract
- In most of the previous ultrafast electron injection studies of Ru(dcbpy)(2)(NCS)(2)-sensitized nanocrystalline TiO2 films, experimental conditions and sample preparation have been different from study to study and no studies of how the differences affect the observed dynamics have been reported. In the present paper, we have investigated the influence of such modifications. Pump photon density, environment of the sensitized film (solvent and air), and parameters of the film preparation (crystallinity and quality of the film) were varied in a systematic way and the obtained dynamics were compared to that of a well-defined reference sample: Ru(dcbpy)(2)(NCS)(2)-TiO2 in acetonitrile. In some cases, the induced changes in the dynamics were uncorrelated to the electron injection process. High pump photon density (not in the linear response region) and exposure of the sensitized film to air altered the picosecond-time- scale kinetics considerably, and the changes were attributed mostly to degradation of the dye. In other cases, changes in the measured kinetics were related to the electron injection processes: reducing the firing temperature of the nanocrystalline film or making the film via electron beam evaporation (EBE) resulted in a decrease of the overall crystallinity of the film, and the electron injection slowed. In the sensitized EBE films, in addition to an increased contribution of triplet excited-state electron injection, a new electron transfer (ET) process with a time constant of 200 fs was observed.
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| 10. |
- Kindlund, Hanna, et al.
(författare)
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Kinetic Engineering of Wurtzite and Zinc-Blende AlSb Shells on InAs Nanowires
- 2018
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Ingår i: Nano Letters. - : American Chemical Society (ACS). - 1530-6984 .- 1530-6992. ; 18:9, s. 5775-5781
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Tidskriftsartikel (refereegranskat)abstract
- Using AlSb as the model system, we demonstrate that kinetic limitations can lead to the preferential growth of wurtzite (WZ) AlSb shells rather than the thermodynamically stable zinc-blende (ZB) AlSb and that the WZ and ZB relative thickness can be tuned by a careful control of the deposition parameters. We report selective heteroepitaxial radial growth of AlSb deposited by metal-organic vapor phase epitaxy (MOVPE) on InAs nanowire core templates with engineered lengths of axial WZ and ZB segments. AlSb shell thickness, crystal phase, nanostructure, and composition are investigated as a function of the shell growth temperature, Ts, using scanning electron microscopy, transmission electron microscopy, electron tomography, and energy-dispersive X-ray spectroscopy. We find that ZB- and WZ-structured AlSb shells grow heteroepitaxially around the ZB and WZ segments of the InAs core, respectively. Surprisingly, at 390 < Ts < 450 °C, the WZ-AlSb shells are thicker than the ZB-AlSb shells, and their thickness increases with decreasing Ts. In comparison, the ZB-AlSb shell thicknesses increase slightly with increasing Ts. We find that the increased thickness of the WZ-AlSb shells is due to the formation and enhanced deposition on {112-0} facets rather than on the more commonly grown {101-0} sidewall facets. Overall, these results, which are in direct contrast with previous reports suggesting that heteroepitaxial radial growth of III-antimonides is always favored on the ZB-structure facets, indicate that the growth of WZ-AlSb is preferred over the thermodynamically stable ZB-AlSb at lower growth temperatures. We attribute this behavior to kinetic limitations of MOVPE of AlSb on ZB and WZ phases of InAs.
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