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Sökning: WFRF:(Wang Jifang)

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1.
  • You, Fang, et al. (författare)
  • Icon Design Recommendations for Central Consoles of Intelligent Vehicles
  • 2020
  • Ingår i: Human Interaction, Emerging Technologies and Future Applications II. - Cham : Springer. - 9783030442668 - 9783030442675 ; , s. 285-291
  • Konferensbidrag (refereegranskat)abstract
    • Advances in vehicle technology open up both opportunities and challenges for human-machine interface (HMI) design in intelligent vehicles. Design guidelines for icons in central consoles of vehicles have been discussed in human-computer interaction community, but more study and innovation are needed in icon design. In this paper, we investigated the displayed line thickness and size of icons in the intelligent vehicle’s central control screen, based on international design guidelines and standards. The experiment involved 17 participants performing simulated in-vehicle secondary task. The result from the experiments shows that the usability of icons increases and the driver’s workload decreases as the icons get larger. We also found a set of recommended values for size and line thickness of icons in this context. Future work will focus on providing design guidelines for other aspects of HMI design in intelligent vehicles.
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2.
  • Wang, Lijuan, et al. (författare)
  • Enhanced tunneling in the GaAs p(+)-n(+) junction by embedding InAs quantum dots
  • 2012
  • Ingår i: Semiconductor Science and Technology. - : IOP Publishing. - 0268-1242 .- 1361-6641. ; 27:11, s. 115010-
  • Tidskriftsartikel (refereegranskat)abstract
    • GaAs p(+)-n(+) junctions with and without a layer of InAs quantum dots (QDs) embedded at the interface are discussed in this article. The current density versus voltage (I-V) characteristics show that the junctions without QDs are weak degenerate due to the Beryllium(Be) atoms diffusion of nominal p(++)-GaAs; the junctions with QDs generate enhanced tunneling current at forward bias, because the QDs layer reduces the Be diffusion and enables a two-step tunneling process. At room temperature, the current density of the sample with QDs is enhanced to 122 A cm(-2) at a forward bias of +0.32 V, which is about 2 orders of magnitude higher than the reference sample without QDs.
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