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| 2. |
- Chen, Ding-Yuan, et al.
(författare)
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Impact of the Channel Thickness on Electron Confinement in MOCVD-Grown High Breakdown Buffer-Free AlGaN/GaN Heterostructures
- 2023
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Ingår i: Physica Status Solidi (A) Applications and Materials Science. - : Wiley. - 1862-6319 .- 1862-6300. ; 220:16
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Tidskriftsartikel (refereegranskat)abstract
- The 2D electron gas (2DEG) confinement on high electron mobility transistor (HEMT) heterostructures with a thin undoped GaN channel layer on the top of a grain-boundary-free AlN nucleation layer is studied. This is the first time demonstration of a buffer-free epi-structure grown with metal-organic chemical vapor deposition with thin GaN channel thicknesses, ranging from 250 to 150 nm, without any degradation of the structural quality and 2DEG properties. The HEMTs with a gate length of 70 nm exhibit good DC characteristics with peak transconductances of 500 mS mm(-1) and maximum saturated drain currents above 1 A mm(-1). A thinner GaN channel layer improves 2DEG confinement because of the enhanced effectiveness of the AlN nucleation layer acting as a back-barrier. An excellent drain-induced barrier lowering of only 20 mV V-1 at a V-DS of 25 V and an outstanding critical electric field of 0.95 MV cm(-1) are demonstrated. Good large-signal performance at 28 GHz with output power levels of 2.0 and 3.2 W mm(-1) and associated power-added efficiencies of 56% and 40% are obtained at a V-DS of 15 and 25 V, respectively. These results demonstrate the potential of sub-100 nm gate length HEMTs on a buffer-free GaN-on-SiC heterostructure.
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| 3. |
- Ding Yuan, Chen, 1991, et al.
(författare)
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Impact of in situ NH3 pre-treatment of LPCVD SiN passivation on GaN HEMT performance
- 2022
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Ingår i: Semiconductor Science and Technology. - : IOP Publishing. - 1361-6641 .- 0268-1242. ; 37:3
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Tidskriftsartikel (refereegranskat)abstract
- The impact on the performance of GaN high electron mobility transistors (HEMTs) of in situ ammonia (NH3) pre-treatment prior to the deposition of silicon nitride (SiN) passivation with low-pressure chemical vapor deposition (LPCVD ) is investigated. Three different NH3 pre-treatment durations (0, 3, and 10 min) were compared in terms of interface properties and device performance. A reduction of oxygen (O) at the interface between SiN and epi-structure is detected by scanning transmission electron microscopy (STEM )-electron energy loss spectroscopy (EELS) measurements in the sample subjected to 10 min of pre-treatment. The samples subjected to NH3 pre-treatment show a reduced surface-related current dispersion of 9% (compared to 16% for the untreated sample), which is attributed to the reduction of O at the SiN/epi interface. Furthermore, NH3 pre-treatment for 10 min significantly improves the current dispersion uniformity from 14.5% to 1.9%. The reduced trapping effects result in a high output power of 3.4 W mm(-1) at 3 GHz (compared to 2.6 W mm(-1) for the untreated sample). These results demonstrate that the in situ NH3 pre-treatment before LPCVD of SiN passivation is critical and can effectively improves the large-signal microwave performance of GaN HEMTs.
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| 4. |
- Ding Yuan, Chen, 1991, et al.
(författare)
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Thin Al 0.5 Ga 0.5 N/GaN HEMTs on QuanFINE ® Structure
- 2021
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Ingår i: CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers. ; , s. 153-155
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Konferensbidrag (refereegranskat)abstract
- The performance of HEMTs fabricated on a thin Al0.5Ga0.5N/GaN heterostructure with a total barrier thickness of 6.5 nm is presented and benchmarked to the epi-structure with a 13 nm thick Al0.3Ga0.7N barrier on an identical QuanFINE® structure. DC transfer characteristics on both samples with a gate length of 100 nm demonstrate a high current above 1 A/mm. A higher extrinsic gm of 550 mS/mm is measured on the sample with a thinner high Al content barrier. Moreover, low trapping effects with a 12-14 % buffer-related dispersion at a VDSQ of 25 V are characterized for both samples, which indicate the advantage of the iron-free QuanFINE® heterostructure.
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| 5. |
- Sampson, Joshua N., et al.
(författare)
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Analysis of Heritability and Shared Heritability Based on Genome-Wide Association Studies for 13 Cancer Types
- 2015
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Ingår i: Journal of the National Cancer Institute. - : Oxford University Press (OUP). - 0027-8874 .- 1460-2105. ; 107:12
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Tidskriftsartikel (refereegranskat)abstract
- Background: Studies of related individuals have consistently demonstrated notable familial aggregation of cancer. We aim to estimate the heritability and genetic correlation attributable to the additive effects of common single-nucleotide polymorphisms (SNPs) for cancer at 13 anatomical sites. Methods: Between 2007 and 2014, the US National Cancer Institute has generated data from genome-wide association studies (GWAS) for 49 492 cancer case patients and 34 131 control patients. We apply novel mixed model methodology (GCTA) to this GWAS data to estimate the heritability of individual cancers, as well as the proportion of heritability attributable to cigarette smoking in smoking-related cancers, and the genetic correlation between pairs of cancers. Results: GWAS heritability was statistically significant at nearly all sites, with the estimates of array-based heritability, h(l)(2), on the liability threshold (LT) scale ranging from 0.05 to 0.38. Estimating the combined heritability of multiple smoking characteristics, we calculate that at least 24% (95% confidence interval [CI] = 14% to 37%) and 7% (95% CI = 4% to 11%) of the heritability for lung and bladder cancer, respectively, can be attributed to genetic determinants of smoking. Most pairs of cancers studied did not show evidence of strong genetic correlation. We found only four pairs of cancers with marginally statistically significant correlations, specifically kidney and testes (rho = 0.73, SE = 0.28), diffuse large B-cell lymphoma (DLBCL) and pediatric osteosarcoma (rho = 0.53, SE = 0.21), DLBCL and chronic lymphocytic leukemia (CLL) (rho = 0.51, SE = 0.18), and bladder and lung (rho = 0.35, SE = 0.14). Correlation analysis also indicates that the genetic architecture of lung cancer differs between a smoking population of European ancestry and a nonsmoking Asian population, allowing for the possibility that the genetic etiology for the same disease can vary by population and environmental exposures. Conclusion: Our results provide important insights into the genetic architecture of cancers and suggest new avenues for investigation.
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