| 1. |
- Ademuyiwa, Adesoji O., et al.
(författare)
-
Determinants of morbidity and mortality following emergency abdominal surgery in children in low-income and middle-income countries
- 2016
-
Ingår i: BMJ Global Health. - : BMJ Publishing Group Ltd. - 2059-7908. ; 1:4
-
Tidskriftsartikel (refereegranskat)abstract
- Background: Child health is a key priority on the global health agenda, yet the provision of essential and emergency surgery in children is patchy in resource-poor regions. This study was aimed to determine the mortality risk for emergency abdominal paediatric surgery in low-income countries globally.Methods: Multicentre, international, prospective, cohort study. Self-selected surgical units performing emergency abdominal surgery submitted prespecified data for consecutive children aged <16 years during a 2-week period between July and December 2014. The United Nation's Human Development Index (HDI) was used to stratify countries. The main outcome measure was 30-day postoperative mortality, analysed by multilevel logistic regression.Results: This study included 1409 patients from 253 centres in 43 countries; 282 children were under 2 years of age. Among them, 265 (18.8%) were from low-HDI, 450 (31.9%) from middle-HDI and 694 (49.3%) from high-HDI countries. The most common operations performed were appendectomy, small bowel resection, pyloromyotomy and correction of intussusception. After adjustment for patient and hospital risk factors, child mortality at 30 days was significantly higher in low-HDI (adjusted OR 7.14 (95% CI 2.52 to 20.23), p<0.001) and middle-HDI (4.42 (1.44 to 13.56), p=0.009) countries compared with high-HDI countries, translating to 40 excess deaths per 1000 procedures performed.Conclusions: Adjusted mortality in children following emergency abdominal surgery may be as high as 7 times greater in low-HDI and middle-HDI countries compared with high-HDI countries. Effective provision of emergency essential surgery should be a key priority for global child health agendas.
|
|
| 2. |
|
|
| 3. |
- Schubert, Mathias, et al.
(författare)
-
Phonon properties: Phonon and free charge carrier properties in monoclinic-symmetry ß-Ga2O3
- 2020
-
Ingår i: Gallium Oxide. - Cham : Springer. - 9783030371524 - 9783030371555 - 9783030371531 ; , s. 501-534
-
Bokkapitel (övrigt vetenskapligt/konstnärligt)abstract
- We present and discuss the complete set of infrared-active phonon modes in monoclinic-symmetry crystal modification gallium oxide (gallia, ββ-Ga2O3). The phonon mode set is obtained from a comprehensive analysis of generalized spectroscopic ellipsometry data in the farinfrared and infrared spectral regions investigating various n-type electrically conductive single crystal samples with different free electron volume density parameters cut under different orientations. The analysis of the ellipsometry data is performed using an eigendielectric displacement vector summation (EDVS) approach. In this approach, the effect of the free charge carriers onto the lattice modes of intrinsic ββ-Ga2O3 are removed by calculation. Density functional theory calculations are performed in the general gradient approximation and all phonon modes at the Brillouin-center and their displacement direction dependencies are obtained. Transverse and longitudinal optical phonon mode parameters polarized within the monoclinic plane as well as perpendicular to the monoclinic plane agree excellently between experiment and theory. We also present and discuss the directional limiting frequency parameters within the monoclinic plane, the shape and anisotropy of the reststrahlen band, and the order of the phonon modes in semiconductors with polar phonon modes and monoclinic crystal structure. We further present and discuss the effect of coupling of longitudinal optical phonons with free charge carriers, leading to longitudinal-phonon-plasmon coupled modes. We reveal that the coupled modes, which affect electric and thermal transport, change amplitude, frequency, and direction within the monoclinic plane as a function of free electron concentration. Finally, we show optical Hall effect measurements, and provide experimentally determined effective electron mass parameters in ββ-Ga2O3 for moderately-doped n-type samples.
|
|
