| 1. |
- Achtziger, N, et al.
(författare)
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Formation of passivated layers in p-type SiC by low energy ion implantation of hydrogen
- 2000
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Ingår i: SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2. ; , s. 933-936
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Konferensbidrag (refereegranskat)abstract
- The mobility of hydrogen and its passivating effect on accepters in p-type SiC is investigated. Hydrogen (isotope H-1 or H-2 alternatively) is implanted at temperatures between 300 K and 680 K with low energy (300 eV per atom) in order to minimize implantation damage. The depth profiles of 2H and of passivated accepters correspond closely. Up to 500 K, a fully passivated layer with a well defined thickness is formed. Its depth ton the order of 1 micrometer) is investigated as a function of doping level and hydrogen fluence. At higher temperatures, the incorporation drastically increases, but the electrical passivation is partial only. Qualitative explanations are given.
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| 2. |
- Achtziger, N, et al.
(författare)
-
Hydrogen passivation of silicon carbide by low-energy ion implantation
- 1998
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 73, s. 945-947
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Tidskriftsartikel (refereegranskat)abstract
- implantation of deuterium is performed to investigate the mobility and passivating effect of hydrogen in epitaxial alpha-SiC (polytypes 4H and 6H). To avoid excessive damage and the resulting trapping of hydrogen, the implantation is performed with low energy (600 eV H-2(2)+). The H-2 depth profile is analyzed by secondary ion mass spectrometry. Electrical properties are measured by capacitance-voltage profiling and admittance spectroscopy. In p-type SIG, hydrogen diffuses on a mu m scale even at room temperature and effectively passivates accepters. In n-type SiC, the incorporation of H is suppressed and no passivation is detected. (C) 1998 American Institute of Physics.
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| 3. |
- Achtziger, N, et al.
(författare)
-
Mobility passivating effect and thermal stability of hydrogen in silicon carbide
- 1998
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Ingår i: Physica status solidi. B, Basic research. - 0370-1972 .- 1521-3951. ; 210, s. 395-399
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Tidskriftsartikel (refereegranskat)abstract
- The diffusion and passivating effect of hydrogen (isotope H-2) in epitaxial p-type SiC is studied by secondary ion mass spectrometry and capacitance-voltage profiling on Schottky diodes. The incorporation of hydrogen is achieved by low-energy ion implantation. The influence of implantation energy, temperature and subsequent annealing is presented. Annealing experiments with an electric field applied reveal a reactivation of passivated accepters and a H+ ion drift at a surprisingly low temperature of 530 K.
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