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- Intarasiri, S., et al.
(författare)
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Crystalline quality of 3C-SiC formed by high-fluence C+-implanted Si
- 2007
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Ingår i: Applied Surface Science. - : Elsevier BV. - 0169-4332 .- 1873-5584. ; 253:11, s. 4836-4842
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Tidskriftsartikel (refereegranskat)abstract
- Carbon ions at 40 keV were implanted into (1 0 0) high-purity p-type silicon wafers at 400 degrees C to a fluence of 6.5 x 10(17) ions/cm(2). Subsequent thermal annealing of the implanted samples was performed in a diffusion furnace at atmospheric pressure with inert nitrogen ambient at 1100 degrees C. Time-of-flight energy elastic recoil detection analysis (ToF-E ERDA) was used to investigate depth distributions of the implanted ions. Infrared transmittance (IR) and Raman scattering measurements were used to characterize the formation of SiC in the implanted Si substrate. X-ray diffraction analysis (XRD) was used to characterize the crystalline quality in the surface layer of the sample. The formation of 3C-SiC and its crystalline structure obtained from the above mentioned techniques was finally confirmed by transmission electron microscopy (TEM). The results show that 3C-SiC is directly formed during implantation, and that the subsequent high-temperature annealing enhances the quality of the polycrystalline SiC.
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- Wolborski, Maciej, et al.
(författare)
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Improved Properties of AlON/4H-SiC Interface for Passivation Studies
- 2009
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Ingår i: Materials Science Forum. - Switzerland : Trans Tech Publications. - 0255-5476 .- 1662-9752. ; 600-603, s. 763-766
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Tidskriftsartikel (refereegranskat)abstract
- Aluminium oxynitride (AlON) films of variable composition were grown by reactive sputter deposition in a N2/O2 ambient at room temperature and studied for device passivation. The films were deposited on Si and 4H-SiC substrates as well as on SiC PiN diodes. The AlON/SiO2/SiC stack provided superior interface properties compared to the AlON/SiC structure. Samples with 8% oxygen content, in the AlON film, and subjected to a UV exposure prior to deposition, exhibited the smallest net positive interface charge. A large net negative interface charge was observed for samples with 10% oxygen content and for the samples with 8% oxygen content and subjected to a RCA1 surface clean, prior to deposition. Diodes passivated with AlON films demonstrated reduced leakage current compared to as-processed diodes.
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