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Search: WFRF:(Wu Donping)

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  • Piao, Yinghua, et al. (author)
  • An extensive Raman spectroscopic investigation of ultrathin Co1-xNixSi2 films grown on Si(100)
  • 2012
  • In: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films. - : American Vacuum Society. - 0734-2101 .- 1520-8559. ; 30:4, s. 041511-041518
  • Journal article (peer-reviewed)abstract
    • Ultrathin silicide films were formed by starting from 1-8 nm thick Co1-xNix (x = 0, 0.25, 0.5, 0.75, and 1) at 350 degrees C-900 degrees C. For each composition x, there exists a critical thickness above which the transition temperature from monosilicides CoSi and NiSi to a disilicide-like phase increases with increasing film thickness. Below this thickness, the disilicide phase seems to form without exhibiting the monosilicides within the detection resolution limits of transmission electron microscopy and Raman spectroscopy. Raman spectroscopic analysis seems to indicate that Ni could be dissolved in the CoSi lattice to a certain fraction despite the fact that CoSi and NiSi are distinct with different crystallographic structures. Moreover, the disorder-induced Raman scattering in NiSi2 is found to be enhanced by Co incorporation. The observed annealing behaviors are attributed to variations in free energy change for phase transition caused by differences in metal thickness.
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3.
  • Wu, Donping, et al. (author)
  • Influence of surface treatment prior to ALD high-kappa dielectrics on the performance of SiGe surface-channel pMOSFETs
  • 2004
  • In: IEEE Electron Device Letters. - : Institute of Electrical and Electronics Engineers (IEEE). - 0741-3106 .- 1558-0563. ; 25:5, s. 289-291
  • Journal article (peer-reviewed)abstract
    • Compressively strained Si0.7Ge0.3 surface-channel pMOSFETs with atomic layer deposition (ALD) Al2O3/HfO2/Al2O3 nanolaminate and low-pressure chemical vapor deposition p(+) poly-SiGe gate electrode were fabricated. Surface treatment with either hydrogen fluoride (HF) clean, or HF clean followed by water rinse was performed prior to the ALD processing. The devices with water rinse show a good control of interfacial layer and device reproducibility, while the devices without water rinse lack a clearly observable interfacial layer and show scattered electrical characteristics and distorted mobility curve. A similar to20% increase in hole mobility compared to the Si universal mobility and a similar to0.6-nm-thick continuous interfacial layer are obtained for the pMOSFETs with water rinse.
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