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1.
  • Bai, Sai, et al. (author)
  • Electrophoretic deposited oxide thin films as charge transporting interlayers for solution-processed optoelectronic devices: the case of ZnO nanocrystals
  • 2015
  • In: RSC Advances. - : Royal Society of Chemistry. - 2046-2069. ; 5:11, s. 8216-8222
  • Journal article (peer-reviewed)abstract
    • A promising fabrication method of electron transporting interlayers for solution-processed optoelectronic devices by electrophoretic deposition (EPD) of colloidal zinc oxide (ZnO) nanocrystals was demonstrated. A low voltage of 3-5 V and a short deposition time of 40 s at room temperature were found to be sufficient to generate dense and uniform ZnO thin films. The EPD ZnO nanocrystal films were applied as ETLs for inverted organic solar cell and polymer light emitting diodes (PLEDs). By optimizing the EPD processing of ZnO nanocrystal electron transporting layers (ETLs), inverted organic solar cells based on [3,4-b]-thiophene/benzodithiophene (PTB7): [6-6]-phenyl-C71-butyric acid methyl ester (PC71BM) and poly(3-hexylthiophene) (P3HT): [6-6]-phenyl-C-61-butyric acid methyl ester (PC61BM) with an average PCE of 8.4% and 4.0% were fabricated. In combination with the PLEDs and flexible devices results, we conclude that the EPD processed ZnOnanocrystal thin films can serve as high quality ETLs for solution-processed optoelectronic devices.
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2.
  • Bai, Sai, et al. (author)
  • Ethanedithiol Treatment of Solution-Processed ZnO Thin Films: Controlling the Intragap States of Electron Transporting Interlayers for Efficient and Stable Inverted Organic Photovoltaics
  • 2015
  • In: Advanced Energy Materials. - : Wiley-VCH Verlag. - 1614-6832 .- 1614-6840. ; 5:5, s. 1401606-
  • Journal article (peer-reviewed)abstract
    • The surface defects of solution-processed ZnO films lead to various intragap states. When the solution-processed ZnO films are used as electron transport interlayers (ETLs) in inverted organic solar cells, the intragap states act as interfacial recombination centers for photogenerated charges and thereby degrade the device performance. Here, a simple passivation method based on ethanedithiol (EDT) treatment is demonstrated, which effectively removes the surface defects of the ZnO nanocrystal films by forming zinc ethanedithiolates. The passivation by EDT treatment modulates the intragap states of the ZnO films and introduces a new intragap band. When the EDT-treated ZnO nanocrystal films are used as ETLs in inverted organic solar cells, both the power conversion efficiency and stability of the devices are improved. The control studies show that the solar cells with EDT-treated ZnO films exhibit reduced charge recombination rates and enhanced charge extraction properties. These features are consistent with the fact that the modulation of the intragap states results in reduction of interfacial recombination as well as the improved charge selectivity and electron transport properties of the ETLs. It is further demonstrated that the EDT treatment-based passivation method can be extended to ZnO films deposited from sol-gel precursors.
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3.
  • Wu, Xiaohua, et al. (author)
  • Online Adaptive Model Identification and State of Charge Estimation for Vehicle-Level Battery Packs
  • 2024
  • In: IEEE Transactions on Transportation Electrification. - 2332-7782. ; 10:1, s. 596-607
  • Journal article (peer-reviewed)abstract
    • Accurate state of charge (SOC) estimation of traction batteries plays a crucial role in energy and safety management for electric vehicles. Existing studies focus primarily on cell battery SOC estimation. However, numerical instability and divergence problems might occur for a large-size lithium-ion battery pack consisting of many cells. This paper proposes a high-performance online model identification and SOC estimation method based on an adaptive square root unscented Kalman filter (ASRUKF) and an improved forgetting factor recursive least squares (IFFRLS) for vehicle-level traction battery packs. The model parameters are identified online through the IFFRLS, where the conventional method might encounter numerical stability problems. By updating the square root of the covariance matrix, the divergence problem in the traditional unscented Kalman filter is solved in the ASRUKF algorithm, where the positive semi-definiteness of the covariance matrix is guaranteed. Combined with the adaptive noise covariance matched filtering algorithm and real-time compensation of system error, the proposed method solves the problem of ever-degrading estimation accuracy in the presence of time-varying noise with unknown statistical characteristics. Using a 66.2-kWh vehicle battery pack, we experimentally verified that the proposed algorithm could achieve high estimation accuracy with guaranteed numerical stability. The maximum error of SOC estimation can be bounded by 1%, and the root-mean-square error is as low as 0.47% under real-world vehicle operating conditions.
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4.
  • Xu, Weidong, et al. (author)
  • Iodomethane-Mediated Organometal Halide Perovskite with Record Photoluminescence Lifetime
  • 2016
  • In: ACS Applied Materials and Interfaces. - : AMER CHEMICAL SOC. - 1944-8244 .- 1944-8252. ; 8:35, s. 23181-23189
  • Journal article (peer-reviewed)abstract
    • Organometallic lead halide perovskites are excellent light harvesters for high-efficiency photovoltaic devices. However, as the key component in these devices, a perovskite thin film with good morphology and minimal trap states is still difficult to obtain. Herein we show that by incorporating a low boiling point alkyl halide such as iodomethane (CH3I) into the precursor solution, a perovskite (CH3NH3PbI3-xClx) film with improved grain size and orientation can be easily achieved. More importantly, these films exhibit a significantly reduced amount of trap states. Record photoluminescence lifetimes of more than 4 mu s are achieved; these lifetimes are significantly longer than that of pristine CH3NH3PbI3-xClx films. Planar heterojunction solar cells incorporating these CH3I-mediated perovskites have demonstrated a dramatically increased power conversion efficiency compared to the ones using pristine CH3NH3PbI3-xClx. Photoluminescence, transient absorption, and microwave detected photoconductivity measurements all provide consistent evidence that CH3I addition increases the number of excitons generated and their diffusion length, both of which assist efficient carrier transport in the photovoltaic device. The simple incorporation of alkyl halide to enhance perovskite surface passivation introduces an important direction for future progress on high efficiency perovskite optoelectronic devices.
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5.
  • Yuan, Zhongcheng, et al. (author)
  • Approximately 800-nm-Thick Pinhole-Free Perovskite Films via Facile Solvent Retarding Process for Efficient Planar Solar Cells
  • 2016
  • In: ACS APPLIED MATERIALS and INTERFACES. - : AMER CHEMICAL SOC. - 1944-8244 .- 1944-8252. ; 8:50, s. 34446-34454
  • Journal article (peer-reviewed)abstract
    • Device performance of organometal halide perovskite solar cells significantly depends on the quality and thickness of perovskite absorber films. However, conventional deposition methods often generate pinholes within similar to 300 nm-thick perovskite films, which are detrimental to the large area device manufacture. Here we demonstrated a simple solvent retarding process to deposit uniform pinhole free perovskite films with thicknesses up to similar to 800 nm. Solvent evaporation during the retarding process facilitated the components separation in the mixed halide perovskite precursors, and hence the final films exhibited pinhole free morphology and large grain sizes. In addition, the increased precursor concentration after solvent-retarding process led to thick perovskite films. Based on the uniform and thick perovskite films prepared by this convenient process, a champion device efficiency up to 16.8% was achieved. We believe that this simple deposition procedure for high quality perovskite films around micrometer thickness has a great potential in the application of large area perovskite solar cells and other optoelectronic devices.
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