| 1. |
- Block, Keith I., et al.
(författare)
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Designing a broad-spectrum integrative approach for cancer prevention and treatment
- 2015
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Ingår i: Seminars in Cancer Biology. - : Academic Press. - 1044-579X .- 1096-3650. ; 35, s. S276-S304
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Forskningsöversikt (refereegranskat)abstract
- Targeted therapies and the consequent adoption of "personalized" oncology have achieved notable successes in some cancers; however, significant problems remain with this approach. Many targeted therapies are highly toxic, costs are extremely high, and most patients experience relapse after a few disease-free months. Relapses arise from genetic heterogeneity in tumors, which harbor therapy-resistant immortalized cells that have adopted alternate and compensatory pathways (i.e., pathways that are not reliant upon the same mechanisms as those which have been targeted). To address these limitations, an international task force of 180 scientists was assembled to explore the concept of a low-toxicity "broadspectrum" therapeutic approach that could simultaneously target many key pathways and mechanisms. Using cancer hallmark phenotypes and the tumor microenvironment to account for the various aspects of relevant cancer biology, interdisciplinary teams reviewed each hallmark area and nominated a wide range of high-priority targets (74 in total) that could be modified to improve patient outcomes. For these targets, corresponding low-toxicity therapeutic approaches were then suggested, many of which were phytochemicals. Proposed actions on each target and all of the approaches were further reviewed for known effects on other hallmark areas and the tumor microenvironment Potential contrary or procarcinogenic effects were found for 3.9% of the relationships between targets and hallmarks, and mixed evidence of complementary and contrary relationships was found for 7.1%. Approximately 67% of the relationships revealed potentially complementary effects, and the remainder had no known relationship. Among the approaches, 1.1% had contrary, 2.8% had mixed and 62.1% had complementary relationships. These results suggest that a broad-spectrum approach should be feasible from a safety standpoint. This novel approach has potential to be relatively inexpensive, it should help us address stages and types of cancer that lack conventional treatment, and it may reduce relapse risks. A proposed agenda for future research is offered. (C) 2015 The Authors. Published by Elsevier Ltd.
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| 2. |
- Buyanova, Irina A., et al.
(författare)
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Optical properties of GaNAs/GaAs structures
- 2001
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Ingår i: Materials Science & Engineering. - 0921-5107 .- 1873-4944. ; 82:1-3, s. 143-147
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Tidskriftsartikel (refereegranskat)abstract
- We review our recent results on optical characterization of MBE-grown GaNAs/GaAs quantum structures with N content up to 4.5%, by employing photoluminescence (PL), PL excitation, and time-resolved PL spectroscopies. The dominant PL mechanism has been determined as recombination of excitons trapped by potential fluctuations of the band edge, due to composition disorder and strain nonuniformity of the alloy. The estimated value of the localization potential is around 60 meV for the low-temperature grown structures and can be reduced by increasing the growth temperature or using post-growth rapid thermal annealing (RTA). © 2001 Elsevier Science S.A.
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| 3. |
- Buyanova, Irina A., et al.
(författare)
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Strain relaxation in GaNxP1-x alloy : Effect on optical properties
- 2001
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Ingår i: Physica. B, Condensed matter. - : Elsevier. - 0921-4526 .- 1873-2135. ; 308-310, s. 106-109
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Tidskriftsartikel (refereegranskat)abstract
- By using scanning electron microscopy and cathodoluminescence (CL), a decrease in radiative efficiency of GaNP alloy with increasing N content is seen due to the formation of structural defects. The defect formation is attributed to relaxation of tensile strain in the GaNP layer, which is lattice mismatched to GaP substrate. Several types of extended defects including dislocations, microcracks and pits are revealed in partly relaxed GaNxP1-x epilayers with x=1.9%, whereas coherently strained layers exhibit high crystalline quality for x up to 4%. According to the CL measurements, all extended defects act as competing, non-radiative channels leading to the observed strong decrease in the radiative efficiency. From CL mapping experiments, non-uniformity of strain distribution around the extended defects is partly responsible for the broadening of the photoluminescence (PL) spectra recorded in the macro-PL experiments. © 2001 Elsevier Science B.V. All rights reserved.
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| 4. |
- Buyanova, Irina, 1960-, et al.
(författare)
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Analysis of band anticrossing in GaNxP1-x alloys
- 2004
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Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 70, s. 085209-
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Tidskriftsartikel (refereegranskat)abstract
- Temperature-dependent absorption, photoluminescence excitation, and spectroscopic ellipsometry measurements are employed to accurately determine compositional and temperature dependences of the conduction band (CB) states in GaNP alloys. The CB edge and the higher lying Γc CB minimum (CBM) are shown to exhibit an apparently anticrossing behavior, i.e., the N-induced redshift of the bandgap energy is accompanied by a matching blueshift of the Γc CBM. The obtained data can be phenomenologically described by the band anticrossing model. By considering strong temperature dependence of the energy of the interacting N level, which has largely been overlooked in earlier studies of GaNP, the interacting N level can be attributed to the isolated substitutional NP and the coupling parameter is accurately determined.
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| 5. |
- Buyanova, Irina, 1960-, et al.
(författare)
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Band alignment in the GaNAs/GaAs quantum structures
- 2001
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Konferensbidrag (refereegranskat)abstract
- The band alignment in the GaN_xAs_1-x/GaAs quantum well (QW) structures with low N composition is studied by employing time-resolved photoluminescence (PL) spectroscopy, PL polarization measurements and optically-detected cyclotron resonance (ODCR) studies. The type I band line-up is concluded based on the following experimental results. Firstly, radiative lifetime of the near band gap PL emission in the GaNAs/GaAs MQW structures is nearly identical to that for the spatially direct PL transitions in the GaNAs epilayers. Secondly, the observed polarization of the PL emission in GaNAs QWs (preferentially along the growth direction) is more consistent with the type I band line-up in the GaNAs/GaAs QWs. Thirdly, since the ODCR peaks arising from the free electrons and free holes in GaAs disappear under resonant excitation of the GaNAs MQWs, the photo-excited holes are spatially confined within the GaNAs layers under the resonant excitation condition.
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| 6. |
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| 7. |
- Buyanova, Irina, 1960-, et al.
(författare)
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Direct experimental evidence for unusual effects of hydrogen on the electronic and vibrational properties of GaNxP1−x alloys : a proof for a general property of dilute nitrides
- 2004
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Ingår i: Physical Review B Condensed Matter. - 0163-1829 .- 1095-3795. ; 70:24, s. 245215-245219
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Tidskriftsartikel (refereegranskat)abstract
- Direct experimental evidence for dramatic effects of hydrogen incorporation on the electronic structure and lattice properties of GaNxP1−x alloys is presented. By employing photoluminescence excitation spectroscopy, postgrowth hydrogenation is shown to reopen the band gap of the GaNP alloys and to efficiently reduce the N-induced coupling between the conduction band states. By Raman spectroscopy, these effects are shown to be accompanied by hydrogen-induced breaking of the Ga-P bond in the alloy, evident from disappearance of the corresponding vibrational mode. According to the performed Raman and x-ray diffraction measurements, the hydrogenation is also found to cause a strong expansion of the GaNP lattice, which changes the sign of strain from tensile in the as-grown GaNP epilayers to compressive in the posthydrogenated structures, due to the formation of complexes between N and H.
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| 8. |
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| 9. |
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| 10. |
- Buyanova, Irina, 1960-, et al.
(författare)
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Effect of growth temperature on photoluminescence of GaNAs/GaAs quantum well structures
- 1999
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 75:24, s. 3781-
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Tidskriftsartikel (refereegranskat)abstract
- The effect of growth temperature on the optical properties of GaAs/GaNxAs1-x quantum wells is studied in detail using photoluminescence (PL) spectroscopies. An increase in growth temperature up to 580 °C is shown to improve the optical quality of the structures, while still allowing one to achieve high (>3%) N incorporation. This conclusion is based on: (i) an observed increase in intensity of the GaNAs-related near-band-edge emission; (ii) a reduction in band-edge potential fluctuations, deduced from the analysis of the PL line shape; and (iii) a decrease in concentration of some extended defects detected under resonant excitation of the GaNAs. The thermal quenching of the GaNAs-related PL emission, however, is almost independent of the growth temperature and is attributed to a thermal activation of an efficient nonradiative recombination channel located in the GaNAs layers.
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