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Sökning: WFRF:(Xu Yiyang)

  • Resultat 1-5 av 5
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1.
  • Baxter, Amanda L., et al. (författare)
  • Collaborative experience between scientific software projects using Agile Scrum development
  • 2022
  • Ingår i: Software, practice & experience. - : John Wiley & Sons. - 0038-0644 .- 1097-024X. ; 52:10, s. 2077-2096
  • Tidskriftsartikel (refereegranskat)abstract
    • Developing sustainable software for the scientific community requires expertise in software engineering and domain science. This can be challenging due to the unique needs of scientific software, the insufficient resources for software engineering practices in the scientific community, and the complexity of developing for evolving scientific contexts. While open-source software can partially address these concerns, it can introduce complicating dependencies and delay development. These issues can be reduced if scientists and software developers collaborate. We present a case study wherein scientists from the SuperNova Early Warning System collaborated with software developers from the Scalable Cyberinfrastructure for Multi-Messenger Astrophysics project. The collaboration addressed the difficulties of open-source software development, but presented additional risks to each team. For the scientists, there was a concern of relying on external systems and lacking control in the development process. For the developers, there was a risk in supporting a user-group while maintaining core development. These issues were mitigated by creating a second Agile Scrum framework in parallel with the developers' ongoing Agile Scrum process. This Agile collaboration promoted communication, ensured that the scientists had an active role in development, and allowed the developers to evaluate and implement the scientists' software requirements. The collaboration provided benefits for each group: the scientists actuated their development by using an existing platform, and the developers utilized the scientists' use-case to improve their systems. This case study suggests that scientists and software developers can avoid scientific computing issues by collaborating and that Agile Scrum methods can address emergent concerns.
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2.
  • Dong, Y. B., et al. (författare)
  • Transfer-free, lithography-free, and micrometer-precision patterning of CVD graphene on SiO 2 toward all-carbon electronics
  • 2018
  • Ingår i: APL Materials. - : AIP Publishing. - 2166-532X. ; 6:2
  • Tidskriftsartikel (refereegranskat)abstract
    • A method of producing large area continuous graphene directly on SiO 2 by chemical vapor deposition is systematically developed. Cu thin film catalysts are sputtered onto the SiO 2 and pre-patterned. During graphene deposition, high temperature induces evaporation and balling of the Cu, and the graphene "lands onto" SiO 2 . Due to the high heating and growth rate, continuous graphene is largely completed before the Cu evaporation and balling. 60 nm is identified as the optimal thickness of the Cu for a successful graphene growth and μm-large feature size in the graphene. An all-carbon device is demonstrated based on this technique.
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3.
  • Dong, Yibo, et al. (författare)
  • In Situ Growth of CVD Graphene Directly on Dielectric Surface toward Application
  • 2020
  • Ingår i: ACS Applied Electronic Materials. - : American Chemical Society (ACS). - 2637-6113. ; 2:1, s. 238-246
  • Tidskriftsartikel (refereegranskat)abstract
    • A technique for the in situ growth of patterned graphene by CVD has been achieved directly on insulating substrates at 800 degrees C. The graphene growth is catalyzed by a Ni-Cu alloy sacrificial layer, which integrates many advantages such as being lithography-free, and almost wrinkle-free, with a high repeatability and rapid growth. The etching method of the metal sacrificial layer is the core of this technique, and the mechanism is analyzed. Graphene has been found to play an important role in accelerating etching speeds. The Ni-Cu alloy exhibits a high catalytic activity, and thus, high-quality graphene can be obtained at a lower temperature. Moreover, the Ni-Cu layer accommodates a limited amount of carbon atoms, which ensures a high monolayer ratio of the graphene. The carbon solid solubility of the alloy is calculated theoretically and used to explain the experimental findings. The method is compatible with the current semiconductor process and is conducive to the industrialization of graphene devices.
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4.
  • Dong, Yibo, et al. (författare)
  • Transfer-free, lithography-free and fast growth of patterned CVD graphene directly on insulators by using sacrificial metal catalyst
  • 2018
  • Ingår i: Nanotechnology. - : IOP Publishing. - 1361-6528 .- 0957-4484. ; 29:36
  • Tidskriftsartikel (refereegranskat)abstract
    • Chemical vapor deposited graphene suffers from two problems: transfer from metal catalysts to insulators, and photoresist induced degradation during patterning. Both result in macroscopic and microscopic damages such as holes, tears, doping, and contamination, translated into property and yield dropping. We attempt to solve the problems simultaneously. A nickel thin film is evaporated on SiO2 as a sacrificial catalyst, on which surface graphene is grown. A polymer (PMMA) support is spin-coated on the graphene. During the Ni wet etching process, the etchant can permeate the polymer, making the etching efficient. The PMMA/graphene layer is fixed on the substrate by controlling the surface morphology of Ni film during the graphene growth. After etching, the graphene naturally adheres to the insulating substrate. By using this method, transfer-free, lithography-free and fast growth of graphene realized. The whole experiment has good repeatability and controllability. Compared with graphene transfer between substrates, here, no mechanical manipulation is required, leading to minimal damage. Due to the presence of Ni, the graphene quality is intrinsically better than catalyst-free growth. The Ni thickness and growth temperature are controlled to limit the number of layers of graphene. The technology can be extended to grow other two-dimensional materials with other catalysts.
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5.
  • Pan, G. Z., et al. (författare)
  • Dependence of Beam Quality on Optical Intensity Asymmetry in In-Phase Coherently Coupled VCSEL Array
  • 2018
  • Ingår i: IEEE Journal of Quantum Electronics. - 0018-9197 .- 1558-1713. ; 54:3
  • Tidskriftsartikel (refereegranskat)abstract
    • Dependence of beam quality on optical intensity asymmetry among elements in in-phase coherently coupled vertical cavity surface emitting lasers array is analyzed using the finite-difference time domain solutions software. The analysis results reveal that the coupling efficiency of in-phased array decreases and the divergence increases as the level of optical intensity asymmetry increases. Furthermore, an addressable separated-contact three-element triangular in-phased array is fabricated and measured to verify the analysis. The array exhibits a relatively high of coupling efficiency of 24% and a near-diffraction-limit divergence of 3.2° (1.12 times of the diffraction limit, D.L.) when the optical intensity of each element is adjusted to be uniform. By degrading the optical intensity symmetry, the coupling efficiency decreases to 17.07% and the divergence increases to 4.03° ( 1.37× D.L.). After that, a much larger 10× 10 array exhibiting in-phase characteristics is produced and its beam quality and optical uniformity are measured and discussed. Analysis and experiment results demonstrate that symmetric optical intensity among elements is essential for in-phased array to achieve high beam quality. Employing separate contacts in the array is proved an effective way to obtain uniform optical intensity and achieve high beam quality.
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  • Resultat 1-5 av 5

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