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Enumeration	Reference	Cover	Find
1.	Liu, Juanjuan, et al. (author) Electrically injected GaAsBi/GaAs single quantum well laser diodes 2017 In: AIP Advances. - : AIP Publishing. - 2158-3226 .- 2158-3226. ; 7:11, s. Article Number: 115006 - Journal article (peer-reviewed)abstract We present electrically injected GaAs/GaAsBi single quantum well laser diodes (LDs) emitting at a record long wavelength of 1141 nm at room temperature grown by molecular beam epitaxy. The LDs have excellent device performances with internal quantum efficiency of 86%, internal loss of 10 cm-1 and transparency current density of 196 A/cm2. The LDs can operate under continuous-wave mode up to 273 K. The characteristic temperature are extracted to be 125 K in the temperature range of 77?150 K, and reduced to 90 K in the range of 150?273 K. The temperature coefficient of 0.3 nm/K is extracted in the temperature range of 77?273 K.
2.	Wang, Shu Min, 1963, et al. (author) A novel semiconductor compatible path for graphene syntheis 2013 In: Topical Workshop on MBE-Grown Graphene, Berlin, Germany, 2013. Conference paper (peer-reviewed)
3.	Zhang, Liyao, et al. (author) Semiconductor Compatible Synthesis of Nano-scale Graphene at Low Temperature 2014 In: The 41th International Symposium on Compound Semiconductor. Conference paper (peer-reviewed)

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Author/Editor: Wang, Shu Min, 1963 (3); Li, Yaoyao (3); Cao, Chunfang (3); Yan, Jinyi (3); Zhang, Liyao (2); Gong, Qian (2); show more...; Liu, Qingbo (2); Zhou, Haifei (2); Chen, X. (1); Wang, L (1); Shao, Jun (1); Wu, Xiaoyan (1); Song, Yuxin (1); Zhang, Yanchao (1); Pan, Wenwu (1); Liu, Juanjuan (1); Zhang, Dongliang (1); Ding, Guqiao (1); show less...

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