| 1. |
- Chi, Chaodan, et al.
(författare)
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Si-based InGaAs photodetectors on heterogeneous integrated substrate
- 2021
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Ingår i: Science China: Physics, Mechanics and Astronomy. - : Springer Science and Business Media LLC. - 1674-7348 .- 1869-1927. ; 64:6
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Tidskriftsartikel (refereegranskat)abstract
- In this paper, InGaAs p-i-n photodetectors (PDs) on an InP/SiO2/Si (InPOI) substrate fabricated by ion-slicing technology are demonstrated and compared with the identical device on a commercial InP substrate. The quality of epitaxial layers on the InPOI substrate is similar to that on the InP substrate. The photo responsivities of both devices measured at 1.55 µm are comparable, which are about 0.808–0.828 A W−1. Although the dark current of PD on the InPOI substrate is twice as high as that of PD on the InP substrate at 300 K, the peak detectivities of both PDs are comparable. In general, the overall performance of the InPOI-based PD is comparable to the InP-based PD, demonstrating that the ion-slicing technology is a promising route to enable the high-quality Si-based InP platform for the full photonic integration on a Si substrate.
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| 2. |
- Jiao, Zhejing, et al.
(författare)
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InAs triangular quantum wells grown on InP/SiO 2 /Si heterogeneous substrate for mid-infrared emission
- 2021
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Ingår i: Materials Science in Semiconductor Processing. - : Elsevier BV. - 1369-8001. ; 136
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Tidskriftsartikel (refereegranskat)abstract
- The properties of InAs/In0.53Ga0.37As triangular quantum wells (QWs) grown on an InP/SiO2/Si integrated substrate by ion-slicing technology are investigated. The material structure and growth quality are characterized by the X-ray diffraction (XRD) and transmission electron microscope measurements. The photoluminescence (PL) spectra at various temperatures are also analyzed. The PL peak wavelengths red-shift from 1.94 to 2.13 μm with the increase of temperature from 12.4 to 300 K. The experimental results of the QWs on InP/SiO2/Si substrate are found to be comparable with the performance of the same QWs grown on an InP substrate. The results are promising for future integration of Si with InP-based optical devices for the applications of light emission in mid-infrared wavelength range.
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| 3. |
- Jin, Tingting, et al.
(författare)
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Efficient heterogeneous integration of InP/Si and GaSb/Si templates with ultra-smooth surfaces
- 2022
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Ingår i: Science China Information Sciences. - : Springer Science and Business Media LLC. - 1869-1919 .- 1674-733X. ; 65:8
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Tidskriftsartikel (refereegranskat)abstract
- Heterogeneous integration of InP and GaSb on Si substrates holds a huge potential interest in near-infrared and mid-infrared optoelectronic devices. In this study, 2-inch 180-nm-thick InP and 185-nm-thick GaSb thin layers were successfully transferred onto the Si substrates to form high-quality and ultra-smooth InP/Si and GaSb/Si templates using molecular beam epitaxy (MBE) and the ion-slicing technique together with selective chemical etching. The relocation of the implantation-introduced damage in the sacrificial layer enables the transfer of relatively defect-free InP and GaSb thin films. The sacrificial layers were completely etched off by selective chemical etching, leaving ultra-smooth epitaxial surfaces with a roughness of 0.2 nm for the InP/Si template and 0.9 nm for the GaSb/Si template, respectively. Thus, the chemical mechanical polishing (CMP) process was not required to smooth the surface which usually introduces particles and chemical contaminations on the transferred templates. Furthermore, the donor substrate is not consumed and can be recycled to reduce the cost, which provides a paradigm for the sustainable and economic development of the Si integration platform.
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| 4. |
- Liang, Hao, et al.
(författare)
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InAs/GaAs quantum dot laser epitaxially grown on on-axis (001) GaAsOI substrate
- 2021
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Ingår i: Optics Express. - 1094-4087 .- 1094-4087. ; 29:23, s. 38465-38476
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Tidskriftsartikel (refereegranskat)abstract
- Quantum dot (QD) laser as a light source for silicon optical integration has attracted great research attention because of the strategic vision of optical interconnection. In this paper, the communication band InAs QD ridge waveguide lasers were fabricated on GaAs-on-insulator (GaAsOI) substrate by combining ion-slicing technique and molecular beam epitaxy (MBE) growth. On the foundation of optimizing surface treatment processes, the InAs/In0.13Ga0.87As/GaAs dot-in-well (DWELL) lasers monolithically grown on a GaAsOI substrate were realized under pulsed operation at 20 °C. The static device measurements reveal comparable performance in terms of threshold current density, slope efficiency and output power between the QD lasers on GaAsOI and GaAs substrates. This work shows great potential to fabricate highly integrated light source on Si for photonic integrated circuits.
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| 5. |
- Lin, Jiajie, et al.
(författare)
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Wafer-scale heterogeneous integration InP on trenched Si with a bubble-free interface
- 2020
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Ingår i: APL Materials. - : AIP Publishing. - 2166-532X. ; 8:5
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Tidskriftsartikel (refereegranskat)abstract
- Heterogeneous integration of compound semiconductors on a Si platform leads to advanced device applications in the field of Si photonics and high frequency electronics. However, the unavoidable bubbles formed at the bonding interface are detrimental for achieving a high yield of dissimilar semiconductor integration by the direct wafer bonding technology. In this work, lateral outgassing surface trenches (LOTs) are introduced to efficiently inhibit the bubbles. It is found that the chemical reactions in InP-Si bonding are similar to those in Si-Si bonding, and the generated gas can escape via the LOTs. The outgassing efficiency is dominated by LOTs' spacing, and moreover, the relationship between bubble formation and the LOT's structure is well described by a thermodynamic model. With the method explored in this work, a 2-in. bubble-free crystalline InP thin film integrated on the Si substrate with LOTs is obtained by the ion-slicing and wafer bonding technology. The quantum well active region grown on this Si-based InP film shows a superior photoemission efficiency, and it is found to be 65% as compared to its bulk counterpart.
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| 6. |
- Zhao, Shuyan, et al.
(författare)
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Stress and strain analysis of Si-based III - V template fabricated by ion-slicing
- 2020
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Ingår i: Chinese Physics B. - : IOP Publishing. - 1674-1056. ; 29:7
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Tidskriftsartikel (refereegranskat)abstract
- Strain and stress were simulated using finite element method (FEM) for three III-V-on-Insulator (III-VOI) structures, i.e., InP/SiO2/Si, InP/Al2O3/SiO2/Si, and GaAs/Al2O3/SiO2/Si, fabricated by ion-slicing as the substrates for optoelectronic devices on Si. The thermal strain/stress imposes no risk for optoelectronic structures grown on InPOI at a normal growth temperature using molecular beam epitaxy. Structures grown on GaAsOI are more dangerous than those on InPOI due to a limited critical thickness. The intermedia Al2O3 layer was intended to increase the adherence while it brings in the largest risk. The simulated results reveal thermal stress on Al2O3 over 1 GPa, which is much higher than its critical stress for interfacial fracture. InPOI without an Al2O3 layer is more suitable as the substrate for optoelectronic integration on Si.
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