| 1. |
- Lundgren, Jan, et al.
(författare)
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A power-line noise coupling estimation methodology for architectural exploration of mixed-signal systems
- 2003
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Ingår i: Proceedings of the Southwest Symposium on Mixed-Signa Design. - : IEEE Press. - 0780377788 ; , s. 133-137
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Konferensbidrag (refereegranskat)abstract
- This paper presents methods for early estimation of digital to analog noise coupling over the power distribution network in mixed-signal systems. The methods allow both behavioral verification of mixed-signal architectures and their sensitivity to noise coupling of the power distribution network. The behavioral level noise coupling simulation models are implemented as extensions to the SystemC system design language. To illustrate the effectiveness of the proposed methods, we have estimated the power distribution network noise for a photon-counting X-ray pixel array and compared this with SPICE simulations.
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| 2. |
- Lundgren, Jan, et al.
(författare)
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Simplified Gate Level Noise Injection Models for Behavioral Noise Coupling Simulation
- 2005
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Ingår i: Proceedings of the 2005 European Conference on Circuit Theory and Design. - Piscataway, NJ, USA : IEEE conference proceedings. - 0780390660 - 9780780390669 ; , s. 345-348
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Konferensbidrag (refereegranskat)abstract
- In CMOS digital logic, there are two major noise sources requiring consideration. These are a circuit´s power supply current and its noise current injected into the substrate of the circuit. This paper proposes a method for modeling and estimating the noise current injected into the substrate by capacitive coupling in digital circuits. The simplicity of the model and the reduction of details in the technology libraries facilitates behavioral level noise coupling simulation. The model is exemplified and evaluated for a simple NOT gate test case, for which the accuracy and simplicity of the models show great promise for simulation at the behavioral level.
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| 3. |
- Zhang, J., et al.
(författare)
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Projected performance of experimental InAs/GaAsSb/GaSb TFET as millimeter-wave detector
- 2018
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Ingår i: 2017 IEEE SOI-3D-Subthreshold Microelectronics Unified Conference, S3S 2017. - 9781538637654 ; 2018-March, s. 1-2
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Konferensbidrag (refereegranskat)abstract
- Based on measurements of a vertical nanowire InAs/GaAsSb/GaSb tunneling field-effect transistor (TFET) that exhibited minimum subthreshold swing of 48 mV/dec and a record high I60 of 0.31 μA/μm, a SPICE model has been generated to allow an experimentally-based prediction of the nanowire TFET technology. At 30 GHz the detector has been simulated to reveal a sensitivity of 4.8 kV/W biased near zero volts (VGS =-0.06 V, VDS = 0.1 V). A maximum sensitivity of over 4000 kV/W has been obtained under biased conditions. These results exceed prior measurements of an In0.53Ga0.47As/GaAs0.5Sb0.5 heterojunction TFET by over an order of magnitude.
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