| 1. |
- Aad, G, et al.
(författare)
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- 2015
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swepub:Mat__t
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| 2. |
- Akram, Muhammad Nadeem, et al.
(författare)
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Influence of base-region thickness on the performance of Pnp transistor-VCSEL
- 2014
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Ingår i: Optics Express. - 1094-4087. ; 22:22, s. 27398-27414
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Tidskriftsartikel (refereegranskat)abstract
- We have recently reported a 980nm GaAs-based three terminal Pnp transistor-vertical-cavity surface-emitting laser (TVCSEL) operating at room temperature with optical power up to 1.8mW. However, the current gain beta = Delta I-c/Delta I-b was near zero just before lasing and became negative after the lasing threshold. The main cause of the negative current gain was found to be a gradual and position-dependent forward-biasing (saturation) of the base-collector junction with increasing bias even before lasing threshold. In this article, detailed multi-physics device simulations are performed to better understand the device physics, and find ways to avoid the premature saturation of the base-collector junction. We have optimized the thickness of the base region as well as its doping concentration and the location of the quantum wells to ensure that the T-VCSEL is in the active mode throughout its range of operation. That is, the emitter-base junction is forward biased and base-collector junction is reversed biased for sweeping the excess charges out of the base region.
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| 3. |
- Asadollahi, Ali, et al.
(författare)
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Fabrication of relaxed germanium on insulator via room temperature wafer bonding
- 2014
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Ingår i: ECS Transactions. - : Electrochemical Society. - 1938-6737. ; , s. 533-541
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Konferensbidrag (refereegranskat)abstract
- We report on the fabrication of, high quality, monocrystalline relaxed Germanium with ultra-low roughness on insulator (GeOI) using low-temperature direct wafer bonding. We observe that a two-step epitaxially grown germanium film fabricated on silicon by reduced pressure chemical vapor deposition can be directly bonded to a SiO2 layer using a thin Al2O3 as bonding mediator. After removing the donor substrate silicon the germanium layer exhibits a complete relaxation without degradation in crystalline quality and no stress in the film. . The results suggest that the fabricated high quality GeOI substrate is a suitable platform for high performance device applications.
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| 4. |
- Asadollahi, Ali, et al.
(författare)
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Fabrication of strained Ge on insulator via room temperature wafer bonding
- 2014
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Ingår i: 2014 15th International Conference on Ultimate Integration on Silicon, ULIS 2014. - : IEEE Computer Society. - 9781479937189 ; , s. 81-84
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Konferensbidrag (refereegranskat)abstract
- This work describes a strained germanium on insulator (GeOI) fabrication process using wafer bonding and etch-back techniques. The strained Ge layer is fabricated epitaxially using reduced pressure chemical vapor deposition (RPCVD). The strained Ge is grown pseudomorphic on top of a partially relaxed Si 0.66Ge0.34 layer. Wafer bonding is performed at room temperature without post-anneal processes and the etch-back steps are performed without mechanical grinding and chemical mechanical polishing (CMP).
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| 5. |
- Durr, Hermann A., et al.
(författare)
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A Closer Look Into Magnetism : Opportunities With Synchrotron Radiation
- 2009
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Ingår i: IEEE transactions on magnetics. - 0018-9464 .- 1941-0069. ; 45:1, s. 15-57
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Forskningsöversikt (refereegranskat)abstract
- The unique properties of synchrotron radiation, such as broad energy spectrum, variable light polarization, and flexible time structure, have made it an enormously powerful tool in the study of magnetic phenomena and materials. The refinement of experimental techniques has led to many new research opportunities, keeping up with the challenges put up by modern magnetism research. In this contribution, we review some of the recent developments in the application of synchrotron radiation and particularly soft X-rays to current problems in magnetism, and we discuss future perspectives.
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| 6. |
- Franke, James A, et al.
(författare)
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Agricultural breadbaskets shift poleward given adaptive farmer behavior under climate change
- 2022
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Ingår i: Global Change Biology. - : Wiley. - 1354-1013 .- 1365-2486. ; 28:1, s. 167-181
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Tidskriftsartikel (refereegranskat)abstract
- Modern food production is spatially concentrated in global "breadbaskets". A major unresolved question is whether these peak production regions will shift poleward as the climate warms, allowing some recovery of potential climaterelated losses. While agricultural impacts studies to date have focused on currently cultivated land, the Global Gridded Crop Model Intercomparison Project (GGCMI) Phase 2 experiment allows us to assess changes in both yields and the location of peak productivity regions under warming. We examine crop responses under projected end-of-century warming using 7 process-based models simulating 5 major crops (maize, rice, soybeans, and spring and winter wheat) with a variety of adaptation strategies. We find that in no-adaptation cases, when planting date and cultivar choices are held fixed, regions of peak production remain stationary and yield losses can be severe, since growing seasons contract strongly with warming. When adaptations in management practices are allowed (cultivars that retain growing season length under warming and modified planting dates), peak productivity zones shift poleward and yield losses are largely recovered. While most growing-zone shifts are ultimately limited by geography, breadbaskets studied here move poleward over 600 km on average by end of the century under RCP8.5. These results suggest that agricultural impacts assessments can be strongly biased if restricted in spatial area or in the scope of adaptive behavior considered. Accurate evaluation of food security under climate change requires global modeling and careful treatment of adaptation strategies.
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| 7. |
- Franke, James A., et al.
(författare)
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The GGCMI Phase 2 emulators : Global gridded crop model responses to changes in CO2, temperature, water, and nitrogen (version 1.0)
- 2020
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Ingår i: Geoscientific Model Development. - : Copernicus GmbH. - 1991-959X .- 1991-9603. ; 13:9, s. 3995-4018
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Tidskriftsartikel (refereegranskat)abstract
- Statistical emulation allows combining advantageous features of statistical and process-based crop models for understanding the effects of future climate changes on crop yields. We describe here the development of emulators for nine process-based crop models and five crops using output from the Global Gridded Model Intercomparison Project (GGCMI) Phase 2. The GGCMI Phase 2 experiment is designed with the explicit goal of producing a structured training dataset for emulator development that samples across four dimensions relevant to crop yields: Atmospheric carbon dioxide (CO2) concentrations, temperature, water supply, and nitrogen inputs (CTWN). Simulations are run under two different adaptation assumptions: That growing seasons shorten in warmer climates, and that cultivar choice allows growing seasons to remain fixed. The dataset allows emulating the climatological-mean yield response of all models with a simple polynomial in mean growing-season values. Climatological-mean yields are a central metric in climate change impact analysis; we show here that they can be captured without relying on interannual variations. In general, emulation errors are negligible relative to differences across crop models or even across climate model scenarios; errors become significant only in some marginal lands where crops are not currently grown. We demonstrate that the resulting GGCMI emulators can reproduce yields under realistic future climate simulations, even though the GGCMI Phase 2 dataset is constructed with uniform CTWN offsets, suggesting that the effects of changes in temperature and precipitation distributions are small relative to those of changing means. The resulting emulators therefore capture relevant crop model responses in a lightweight, computationally tractable form, providing a tool that can facilitate model comparison, diagnosis of interacting factors affecting yields, and integrated assessment of climate impacts.
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| 8. |
- Franke, James A., et al.
(författare)
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The GGCMI Phase 2 experiment : Global gridded crop model simulations under uniform changes in CO2, temperature, water, and nitrogen levels (protocol version 1.0)
- 2020
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Ingår i: Geoscientific Model Development. - : Copernicus GmbH. - 1991-959X .- 1991-9603. ; 13:5, s. 2315-2336
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Tidskriftsartikel (refereegranskat)abstract
- Concerns about food security under climate change motivate efforts to better understand future changes in crop yields. Process-based crop models, which represent plant physiological and soil processes, are necessary tools for this purpose since they allow representing future climate and management conditions not sampled in the historical record and new locations to which cultivation may shift. However, process-based crop models differ in many critical details, and their responses to different interacting factors remain only poorly understood. The Global Gridded Crop Model Intercomparison (GGCMI) Phase 2 experiment, an activity of the Agricultural Model Intercomparison and Improvement Project (AgMIP), is designed to provide a systematic parameter sweep focused on climate change factors and their interaction with overall soil fertility, to allow both evaluating model behavior and emulating model responses in impact assessment tools. In this paper we describe the GGCMI Phase 2 experimental protocol and its simulation data archive. A total of 12 crop models simulate five crops with systematic uniform perturbations of historical climate, varying CO2, temperature, water supply, and applied nitrogen ("CTWN") for rainfed and irrigated agriculture, and a second set of simulations represents a type of adaptation by allowing the adjustment of growing season length. We present some crop yield results to illustrate general characteristics of the simulations and potential uses of the GGCMI Phase 2 archive. For example, in cases without adaptation, modeled yields show robust decreases to warmer temperatures in almost all regions, with a nonlinear dependence that means yields in warmer baseline locations have greater temperature sensitivity. Inter-model uncertainty is qualitatively similar across all the four input dimensions but is largest in high-latitude regions where crops may be grown in the future.
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| 9. |
- Gustafsson, Oscar, et al.
(författare)
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A performance assessment of type-II interband In0.5Ga 0.5Sb QD photodetectors
- 2013
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Ingår i: Infrared physics & technology. - : Elsevier BV. - 1350-4495 .- 1879-0275. ; 61, s. 319-324
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Tidskriftsartikel (refereegranskat)abstract
- Self-assembled quantum-dot (QD) structures with type-II band alignment to the surrounding matrix material have been proposed as a III/V material approach to realize small-bandgap device structures suitable for photon detection and imaging in the long-wavelength infrared (LWIR) band. Here, we analyze the photoresponse of In0.5Ga0.5Sb/InAs QD photodiodes and estimate the system performance of type-II QD -based photodetectors. A review of alternative design approaches is presented and the choice of matrix material is discussed in terms of band alignment and its effect on the photoresponse. Photodiodes were fabricated consisting of 10 layers of In0.5Ga 0.5Sb QDs grown on InAs (0 0 1) substrates with metal-organic vapor-phase epitaxy (MOVPE). The photoresponse and dark current were measured in single pixel devices as a function of temperature in the range 20-230 K. The quantum efficiency shows an Arrhenius type behavior, which is attributed to hole trapping. This severely limits the detector performance at typical LWIR sensor operating temperatures (60-120 K). A device design with the matrix material InAs0.6Sb0.4 is proposed as a mean to improve the performance by reducing the barrier for hole transport. This can potentially allow type-II InGaSb QDs to be a competitive sensor material for LWIR detection.
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| 10. |
- Hammar, Mattias, et al.
(författare)
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Room-temperature operation of 980-nm transistor-vertical-cavity surface-emitting lasers
- 2013
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Ingår i: 2013 IEEE 6th International Conference on Advanced Infocomm Technology, ICAIT 2013. - : IEEE. - 9781479904655 ; , s. 141-142
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Konferensbidrag (refereegranskat)abstract
- We report on the design, fabrication and characterization of pnp-type 980-nm transistor-vertical-cavity surface-emitting lasers (T-VCSELs). Using an epitaxial regrowth process and a triple-intracavity current injection scheme we demonstrate static performance levels quite comparable to those of conventional VCSELs, including sub-mA threshold base current, mW-range output power and continuous-wave operation at least up to 50°C.
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